SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
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Abstract
A semiconductor device which, in spite of the existence of a dummy active region, eliminates the need for a larger chip area and improves the surface flatness of the semiconductor substrate. In the process of manufacturing it, a thick gate insulating film for a high voltage MISFET is formed over an n-type buried layer as an active region and a resistance element IR of an internal circuit is formed over the gate insulating film. Since the thick gate insulating film lies between the n-type buried layer and the resistance element IR, the coupling capacitance produced between the substrate (n-type buried layer) and the resistance element IR is reduced.
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Citations
31 Claims
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1-23. -23. (canceled)
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24. A semiconductor device comprising:
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a semiconductor substrate; an element isolating trench formed In the semiconductor substrate; a first insulating film buried in the element isolating trench; and a plurality of dummy active regions defined by the element isolating trench, wherein the dummy active regions are regions where semiconductor elements are not formed, wherein a second insulating film is formed over the first insulating film and the dummy active regions, wherein a resistance element is formed over the second insulating film, wherein the dummy active regions are located under the resistance element, and wherein, in a plan view, the edge of the resistance element is located over the first insulating film. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31)
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Specification