EUTECTIC FLOW CONTAINMENT IN A SEMICONDUCTOR FABRICATION PROCESS
First Claim
1. A semiconductor fabrication process, comprising:
- forming a first bonding structure on a first surface of a cap wafer;
forming a device cavity in the first surface of the cap wafer;
forming a second bonding structure on a first surface of a device wafer;
forming a device structure on the device wafer;
forming a eutectic flow containment structure on at least one of the cap wafer and the device wafer, the eutectic flow containment structure comprising an exterior flow containment micro-levee (FCML), the exterior FCML comprising an elongated ridge overlying the first surface of the device wafer and extending substantially parallel to the second bonding structure, wherein a perimeter of the exterior FCML encloses a perimeter of the second bonding structure; and
bringing the first and second bonding structures into contact while maintaining at least one of the cap wafer and the device wafer at a predetermined temperature to create a eutectic bond from the first and second bonding structures.
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Accused Products
Abstract
Eutectic Flow Containment in a Semiconductor Fabrication Process A disclosed semiconductor fabrication process includes forming a first bonding structure on a first surface of a cap wafer, forming a second bonding structure on a first surface of a device wafer, and forming a device structure on the device wafer. One or more eutectic flow containment structures are formed on the cap wafer, the device wafer, or both. The flow containment structures may include flow containment micro-cavities (FCMCs) and flow containment micro-levee (FCMLs). The FCMLs may be elongated ridges overlying the first surface of the device wafer and extending substantially parallel to the bonding structure. The FCMLs may include interior FCMLs lying within a perimeter of the bonding structure, exterior FCMLs lying outside of the bonding structure perimeter, or both. When the two wafers are bonded, the FCMLs and FCMCs confine flow of the eutectic material to the region of the bonding structure.
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Citations
23 Claims
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1. A semiconductor fabrication process, comprising:
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forming a first bonding structure on a first surface of a cap wafer; forming a device cavity in the first surface of the cap wafer; forming a second bonding structure on a first surface of a device wafer; forming a device structure on the device wafer; forming a eutectic flow containment structure on at least one of the cap wafer and the device wafer, the eutectic flow containment structure comprising an exterior flow containment micro-levee (FCML), the exterior FCML comprising an elongated ridge overlying the first surface of the device wafer and extending substantially parallel to the second bonding structure, wherein a perimeter of the exterior FCML encloses a perimeter of the second bonding structure; and bringing the first and second bonding structures into contact while maintaining at least one of the cap wafer and the device wafer at a predetermined temperature to create a eutectic bond from the first and second bonding structures. - View Dependent Claims (3, 6, 7, 13, 14)
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2. (canceled)
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4-5. -5. (canceled)
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8. A semiconductor fabrication process, comprising:
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forming a first bonding structure on a first surface of a cap wafer; forming a device cavity in the first surface of the cap wafer; forming a second bonding structure on a first surface of a device wafer; forming a device structure on the device wafer; forming a plurality of eutectic flow containment structures on at least one of the cap wafer and the device wafer, each eutectic flow containment structure being selected from a flow containment micro-cavity (FCMC) and a flow containment micro-levee (FCML); and bringing the first and second bonding structures into contact while maintaining at least one of the cap wafer and the device wafer at a predetermined temperature to create a eutectic bond from the first and second bonding structures; wherein forming the the plurality of flow containment structures comprises forming an exterior flow containment micro-cavity (FCMC) on the cap wafer wherein a perimeter of the exterior FCMC encloses a perimeter of the first bonding structure. - View Dependent Claims (9, 12)
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10-11. -11. (canceled)
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15-20. -20. (canceled)
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21. A semiconductor fabrication process, comprising:
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forming a first bonding structure on a first surface of a cap wafer; forming a device cavity in the first surface of the cap wafer; forming a second bonding structure on a first surface of a device wafer; forming a device structure on the device wafer; forming a eutectic flow containment structure on at least one of the cap wafer and the device wafer, the eutectic flow containment structure comprising an exterior flow containment structure, the exterior flow containment structure comprising an elongated ridge overlying the first surface of the device wafer and extending substantially parallel to the second bonding structure, wherein a perimeter of the exterior flow containment structure encloses a perimeter of the second bonding structure; and creating a eutectic bond between the first and second bonding structures. - View Dependent Claims (22, 23)
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Specification