FILM FORMING METHOD, FILM FORMING APPARATUS, STORAGE MEDIUM AND SEMICONDUCTOR DEVICE

• US 20100244204A1
• Filed: 05/11/2007
• Published: 09/30/2010
• Est. Priority Date: 05/25/2006
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Matsuoka, Takaaki, Horigome, Masahiro
• Application Number:
  US12/301,902
• Publication Number:
  US 20100244204A1
• Time in Patent Office: Days
• US Class Current: 257/632
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/511 using microwave discharges
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01L 21/0212 the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/3127 Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene

Abstract

Provided is a technology capable of obtaining a fluorine-containing carbon film having a good leakage property, coefficient of thermal expansion and mechanical strength. The fluorine-containing carbon film is formed by using active species obtained by activating a C₅F₈ gas and a hydrogen gas. Fluorine in the fluorine-containing carbon film comes off together with H so that the amount of F decreases, thereby accelerating the polymerization. As a result, a C-dangling bond in the fluorine-containing carbon is decreased and a leakage current is reduced. Further, as the polymerization accelerates, the film gets stronger, so that the fluorine-containing carbon film having a high mechanical strength such as a high elasticity or a high hardness can be obtained.

Claims

1. A film forming method for forming a fluorine-containing carbon film by using active species obtained by activating a C₅F₈ gas and a hydrogen gas.

2. The film forming method of claim 1, wherein the hydrogen gas is mixed with the C₅F₈ gas such that a flow rate ratio of the hydrogen gas to the C₅F₈ gas is about 20% to 60%.

3. The film forming method of claim 1, wherein the C₅F₈ gas is a gas selected from an octafluorocyclopentene gas, an octafluoropentyne gas and an octafluoropentadiene gas.

4. The film forming method of claim 1, wherein the fluorine-containing carbon film is an insulating film included in a semiconductor device.

10. A storage medium for storing therein a computer program executed on a computer and used in a film forming apparatus,

wherein the computer program is composed of steps for executing a film forming method as claimed in claim 1.

11. A semiconductor device comprising an insulating film made of a fluorine-containing carbon film formed by a method as claimed in claim 1.

5. A film forming method comprising:

mounting a substrate to be subjected to a film forming process on a mounting unit in a processing vessel;

introducing a plasma generating gas from an upper portion of the processing vessel;

vacuum-exhausting an inside of the processing vessel from a lower side below the substrate;

introducing a C₅F₈ gas into the processing vessel from between a position corresponding to a height at which the plasma generating gas is introduced and a position corresponding to a height of the substrate;

introducing a hydrogen gas into the processing vessel; and

converting the C₅F₈ gas and the hydrogen gas into a plasma by supplying a microwave into the processing vessel from a planar antenna member installed at the upper portion of the processing vessel to face the mounting table and provided with a number of slits along a circumferential direction.

6. A film forming apparatus comprising:

an airtightly sealed processing vessel including therein a mounting unit for mounting a substrate thereon;

a unit for supplying a C₅F₈ gas into the processing vessel;

a unit for supplying a hydrogen gas into the processing vessel;

a plasma generating unit for supplying an energy to the C₅F₈ gas and the hydrogen gas to convert the gases into a plasma;

a unit for vacuum-evacuating an inside of the processing vessel; and

a control unit for outputting a control instruction to each unit to introduce the C₅F₈ gas and the hydrogen gas into the processing vessel and to convert the gases into the plasma.

7. The film forming apparatus of claim 6, wherein the plasma generating unit includes:

a waveguide for guiding a microwave into the processing vessel; and

a planar antenna member connected to the waveguide, installed to face the mounting unit and provided with a number of slits along a circumferential direction,

wherein the unit for supplying the C₅F₈ gas into the processing vessel introduces the C₅F₈ gas into the processing vessel from between a position corresponding to a height of a unit for supplying a plasma generating gas, which is to be excited by the microwave, into the processing vessel and a position corresponding to a height of the substrate mounted on the mounting unit.

8. The film forming apparatus of claim 6, further comprising:

a flow rate control unit for controlling a flow rate of the C₅F₈ gas and a flow rate of the hydrogen gas supplied into the processing vessel,

wherein the flow rate control unit is controlled by the control unit to mix the hydrogen gas with the C₅F₈ gas such that a flow rate ratio of the hydrogen gas to the C₅F₈ gas becomes about 20% to 60%.

9. The film forming apparatus of claim 6, wherein the C₅F₈ gas is a gas selected from an octafluorocyclopentene gas, an octafluoropentyne gas and an octafluoropentadiene gas.