SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND ELECTRONIC INSTRUMENT
First Claim
Patent Images
1. A surface acoustic wave resonator provided on a quartz crystal substrate with Euler angles (−
- 1.5°
≦
φ
≦
1.5°
, 117°
≦
θ
≦
142°
, and 42.79°
≦
|Ψ
|≦
49.57°
, comprising;
an IDT which excites a stop band upper end mode surface acoustic wave; and
inter-electrode finger grooves hollowed out of the substrate positioned between electrode fingers configuring the IDT, whereinwhen the wavelength of the surface acoustic wave is λ and
the depth of the inter-electrode finger grooves is G, λ and
G satisfy the relationship of
0.01λ
≦
Gand wherein,when the line occupation rate of the IDT is η
, the inter-electrode finger groove depth G and line occupation rate η
satisfy the relationships of
−
2.0000×
G/λ
+0.7200≦
η
≦
−
−
2.5000×
G/λ
+0.7775
provided that
0.0100λ
≦
G≦
0.0500λ
−
3.5898×
G/λ
+0.7995≦
η
≦
−
2.5000×
G/λ
+0.7775
provided that
0.0500λ
<
G≦
0.0695.
2 Assignments
0 Petitions
Accused Products
Abstract
A SAW resonator which, using a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 42.79°≦|105|≦49.57°, includes an IDT which excites a stop band upper end mode SAW, and grooves hollowed out of the substrate positioned between electrode fingers configuring the IDT, wherein, when the wavelength of the SAW is λ and the depth of the inter-electrode finger grooves is G, λ and G satisfy the relationship of 0.01λ≦G and wherein, when the line occupation rate of the IDT is η, the groove depth G and line occupation rate η satisfy the relationships of −2.0000×G/λ+0.7200≦η≦−2.5000×G/λ+0.7775 provided that 0.0100λ≦G≦0.0500λ, −3.5898×G/λ+0.7995≦η≦−2.5000+G/λ+0.7775 provided that 0.0500λ<G≦0.0695λ.
93 Citations
20 Claims
-
1. A surface acoustic wave resonator provided on a quartz crystal substrate with Euler angles (−
- 1.5°
≦
φ
≦
1.5°
, 117°
≦
θ
≦
142°
, and 42.79°
≦
|Ψ
|≦
49.57°
, comprising;an IDT which excites a stop band upper end mode surface acoustic wave; and inter-electrode finger grooves hollowed out of the substrate positioned between electrode fingers configuring the IDT, wherein when the wavelength of the surface acoustic wave is λ and
the depth of the inter-electrode finger grooves is G, λ and
G satisfy the relationship of
0.01λ
≦
Gand wherein, when the line occupation rate of the IDT is η
, the inter-electrode finger groove depth G and line occupation rate η
satisfy the relationships of
−
2.0000×
G/λ
+0.7200≦
η
≦
−
−
2.5000×
G/λ
+0.7775
provided that
0.0100λ
≦
G≦
0.0500λ
−
3.5898×
G/λ
+0.7995≦
η
≦
−
2.5000×
G/λ
+0.7775
provided that
0.0500λ
<
G≦
0.0695.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
- 1.5°
-
3. The surface acoustic wave resonator according to claim 1, wherein
when the electrode film thickness of the IDT is H, H satisfies the relationship of
0<- H≦
0.035λ
.
- H≦
-
4. The surface acoustic wave resonator according to claim 3, wherein
the line occupation rate η - satisfies the relationship of
η
=−
1963.05×
(G/λ
)3+196.28×
(G/λ
)2−
6.53×
(G/λ
)−
135.99×
(H/λ
)2+5.817×
(H/λ
)+0.732−
99.99×
(G/λ
)×
(H/λ
)
(8)
- satisfies the relationship of
-
5. The surface acoustic wave resonator according to claim 3, wherein
the sum of the inter-electrode finger groove depth G and electrode film thickness H satisfies the relationship of
0.040λ- ≦
G+H.
- ≦
-
6. The surface acoustic wave resonator according to claim 1, wherein
Ψ - and θ
satisfy the relationship of
Ψ
=1.191×
10−
3×
θ
3−
4.490×
10−
1×
02+5.646×
101×
0−
2.324×
103±
1.0
- and θ
-
7. The surface acoustic wave resonator according to claim 1, wherein
when a stop band upper end mode frequency in the IDT is ft2, a stop band lower end mode frequency in reflectors disposed in such a way as to sandwich the IDT in the propagation direction of the surface acoustic wave is fr1, and a stop band upper end mode frequency of the reflectors is fr2, ft2, fr1, and fr2 satisfy the relationship of
fr1<- ft2<
fr2.
- ft2<
-
8. The surface acoustic wave resonator according to claim 1, wherein
inter-conductor strip grooves are provided between conductor strips configuring the reflectors, and the depth of the inter-conductor strip grooves is less than that of the inter-electrode finger grooves. -
9. A surface acoustic wave oscillator comprising:
-
the surface acoustic wave resonator according to claim 1; and an IC for driving the IDT.
-
-
10. An electronic instrument comprising the surface acoustic wave resonator according to claim 1.
-
11. An electronic instrument comprising the surface acoustic wave resonator according to claim 3.
-
12. An electronic instrument comprising the surface acoustic wave resonator according to claim 4.
-
13. An electronic instrument comprising the surface acoustic wave resonator according to claim 5.
-
14. An electronic instrument comprising the surface acoustic wave resonator according to claim 6.
-
15. An electronic instrument comprising the surface acoustic wave resonator according to claim 7.
-
16. An electronic instrument comprising the surface acoustic wave resonator according to claim 8.
-
17. An electronic instrument comprising the surface acoustic wave resonator according to claim 9.
-
18. The surface acoustic wave resonator according to claim 2, wherein
when the electrode film thickness of the IDT is H, H satisfies the relationship of
0<- H≦
0.035λ
.
- H≦
-
19. The surface acoustic wave resonator according to claim 4, wherein
the sum of the inter-electrode finger groove depth G and electrode film thickness H satisfies the relationship of
0.0407λ- ≦
G+H.
- ≦
-
20. An electronic instrument comprising the surface acoustic wave resonator according to claim 2.
Specification
-
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Current AssigneeSeiko Epson Corporation (Seiko Group)
-
Original AssigneeEpson Toyocom Corporation (Seiko Group)
-
InventorsYAMANAKA, Kunihito
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current310/313.B
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CPC Class CodesH03B 5/326 the resonator being an acou...H03H 9/02551 of quartz substratesH03H 9/0296 Surface acoustic wave [SAW]...H03H 9/02992 Details of bus bars, contac...H03H 9/14538 FormationH03H 9/14594 Plan-rotated or plan-tilted...H03H 9/25 Constructional features of ...
