INTEGRATED CIRCUIT CHIP USING TOP POST-PASSIVATION TECHNOLOGY AND BOTTOM STRUCTURE TECHNOLOGY

• US 20100246152A1
• Filed: 03/11/2010
• Published: 09/30/2010
• Est. Priority Date: 03/30/2009
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Megica Corporation (Chipbond Technology Corporation)
• Inventors: Liu, Te-Sheng, Yang, Ping-Jung, Lin, Mou-Shiung, Lee, Jin-Yuan, Lo, Hsin-Jung
• Granted Patent: US 8,456,856 B2
• Time in Patent Office: Days
• US Class Current: 361/783
• CPC Class Codes: G06F 1/16 Constructional details or arrangements
• CPC Class Codes: G11C 5/147 Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops G11C5/141 takes precedence
• CPC Class Codes: H01L 21/304 Mechanical treatment, e.g. grinding, polishing, cutting H01L21/30625 takes precedence
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2223/6611 Wire connections
• CPC Class Codes: H01L 2223/6666 for decoupling, e.g. bypass capacitors
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/0231 Manufacturing methods of the redistribution layers
• CPC Class Codes: H01L 2224/02311 Additive methods
• CPC Class Codes: H01L 2224/02313 Subtractive methods
• CPC Class Codes: H01L 2224/02321 Reworking
• CPC Class Codes: H01L 2224/0233 Structure of the redistribution layers
• CPC Class Codes: H01L 2224/02331 Multilayer structure
• CPC Class Codes: H01L 2224/0235 Shape of the redistribution layers
• CPC Class Codes: H01L 2224/0237 Disposition of the redistribution layers
• CPC Class Codes: H01L 2224/02371 connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/02375 Top view
• CPC Class Codes: H01L 2224/02381 : Side view
• CPC Class Codes: H01L 2224/0239 : Material of the redistribution layers
• CPC Class Codes: H01L 2224/024 : Material of the insulating layers therebetween
• CPC Class Codes: H01L 2224/03 : Manufacturing methods
• CPC Class Codes: H01L 2224/0345 : Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/03462 : Electroplating
• CPC Class Codes: H01L 2224/03464 : Electroless plating
• CPC Class Codes: H01L 2224/0361 : Physical or chemical etching
• CPC Class Codes: H01L 2224/03612 : by physical means only
• CPC Class Codes: H01L 2224/03614 : by chemical means only
• CPC Class Codes: H01L 2224/03912 : the bump being used as a mask for patterning the bonding area
• CPC Class Codes: H01L 2224/0392 : specifically adapted to include a probing step
• CPC Class Codes: H01L 2224/0401 : Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 : Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05024 : the internal layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05027 : the internal layer extending out of an opening
• CPC Class Codes: H01L 2224/05155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05166 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05171 : Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05176 : Ruthenium [Ru] as principal constituent
• CPC Class Codes: H01L 2224/05181 : Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05187 : Ceramics, e.g. crystalline carbides, nitrides or oxides glass ceramics H01L2224/05188
• CPC Class Codes: H01L 2224/05541 : Structure
• CPC Class Codes: H01L 2224/05548 : Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05554 : being square
• CPC Class Codes: H01L 2224/0556 : Disposition
• CPC Class Codes: H01L 2224/05567 : the external layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05572 : the external layer extending out of an opening
• CPC Class Codes: H01L 2224/056 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/05624 : Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05639 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05664 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05669 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05673 : Rhodium [Rh] as principal constituent
• CPC Class Codes: H01L 2224/05676 : Ruthenium [Ru] as principal constituent
• CPC Class Codes: H01L 2224/11 : Manufacturing methods
• CPC Class Codes: H01L 2224/11009 : for protecting parts during manufacture
• CPC Class Codes: H01L 2224/1132 : Screen printing, i.e. using a stencil
• CPC Class Codes: H01L 2224/11334 : using preformed bumps
• CPC Class Codes: H01L 2224/11462 : Electroplating
• CPC Class Codes: H01L 2224/11464 : Electroless plating
• CPC Class Codes: H01L 2224/1147 : using a lift-off mask
• CPC Class Codes: H01L 2224/11849 : Reflowing
• CPC Class Codes: H01L 2224/119 : Methods of manufacturing bump connectors involving a specific sequence of method steps
• CPC Class Codes: H01L 2224/1191 : Forming a passivation layer after forming the bump connector
• CPC Class Codes: H01L 2224/13 : of an individual bump connector
• CPC Class Codes: H01L 2224/13006 : Bump connector larger than the underlying bonding area, e.g. than the under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/1302 : Disposition
• CPC Class Codes: H01L 2224/13022 : the bump connector being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/13024 : the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13082 : Two-layer arrangements
• CPC Class Codes: H01L 2224/13083 : Three-layer arrangements
• CPC Class Codes: H01L 2224/13084 : Four-layer arrangements
• CPC Class Codes: H01L 2224/13099 : Material
• CPC Class Codes: H01L 2224/131 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13109 : Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13113 : Bismuth [Bi] as principal constituent
• CPC Class Codes: H01L 2224/13124 : Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/13139 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13164 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/13169 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/13294 : with a principal constituent of the material being a liquid not provided for in groups H01L2224/132 - H01L2224/13291
• CPC Class Codes: H01L 2224/133 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13311 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13609 : Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/1403 : Bump connectors having different sizes, e.g. different diameters, heights or widths
• CPC Class Codes: H01L 2224/1411 : the bump connectors being bonded to at least one common bonding area
• CPC Class Codes: H01L 2224/14181 : On opposite sides of the body
• CPC Class Codes: H01L 2224/16145 : the bodies being stacked
• CPC Class Codes: H01L 2224/16225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 : the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/16245 : the item being metallic
• CPC Class Codes: H01L 2224/16265 : the item being a discrete passive component
• CPC Class Codes: H01L 2224/17181 : On opposite sides of the body
• CPC Class Codes: H01L 2224/2919 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/2929 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29294 : with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
• CPC Class Codes: H01L 2224/293 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/29339 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32105 : the layer connector connecting bonding areas being not aligned with respect to each other
• CPC Class Codes: H01L 2224/32145 : the bodies being stacked
• CPC Class Codes: H01L 2224/32225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 : the item being metallic
• CPC Class Codes: H01L 2224/33181 : On opposite sides of the body
• CPC Class Codes: H01L 2224/45124 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48111 : the wire connector extending above another semiconductor or solid-state body
• CPC Class Codes: H01L 2224/48145 : the bodies being stacked
• CPC Class Codes: H01L 2224/48227 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 : the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48624 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48644 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48647 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48664 : Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/48669 : Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48744 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48764 : Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/48769 : Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48824 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48844 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48847 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48864 : Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/48869 : Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/4911 : the connectors being bonded to at least one common bonding area, e.g. daisy chain
• CPC Class Codes: H01L 2224/49175 : Parallel arrangements
• CPC Class Codes: H01L 2224/4918 : being disposed on at least two different sides of the body, e.g. dual array
• CPC Class Codes: H01L 2224/73203 : Bump and layer connectors
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73207 : Bump and wire connectors
• CPC Class Codes: H01L 2224/73215 : Layer and wire connectors
• CPC Class Codes: H01L 2224/73253 : Bump and layer connectors
• CPC Class Codes: H01L 2224/73257 : Bump and wire connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/81 : using a bump connector
• CPC Class Codes: H01L 2224/81191 : wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81411 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/81444 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/81801 : Soldering or alloying
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 2224/8185 : using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/81895 : between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
• CPC Class Codes: H01L 2224/81903 : by means of a layer connector
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 2224/83101 : as prepeg comprising a layer connector, e.g. provided in an insulating plate member
• CPC Class Codes: H01L 2224/83104 : by applying pressure, e.g. by injection
• CPC Class Codes: H01L 2224/83851 : being an anisotropic conductive adhesive
• CPC Class Codes: H01L 2224/85 : using a wire connector
• CPC Class Codes: H01L 2224/92 : Specific sequence of method steps
• CPC Class Codes: H01L 2224/9202 : Forming additional connectors after the connecting process
• CPC Class Codes: H01L 2224/92125 : the second connecting process involving a layer connector
• CPC Class Codes: H01L 2224/92127 : the second connecting process involving a wire connector
• CPC Class Codes: H01L 2224/92147 : the second connecting process involving a wire connector
• CPC Class Codes: H01L 2224/92225 : the second connecting process involving a layer connector
• CPC Class Codes: H01L 2224/92247 : the second connecting process involving a wire connector
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2225/06506 : Wire or wire-like electrical connections between devices
• CPC Class Codes: H01L 2225/0651 : Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 : Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06541 : Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 2225/06562 : at least one device in the stack being rotated or offset
• CPC Class Codes: H01L 2225/06589 : Thermal management, e.g. cooling
• CPC Class Codes: H01L 2225/1023 : the support being an insulating substrate
• CPC Class Codes: H01L 2225/1029 : the support being a lead frame
• CPC Class Codes: H01L 2225/1058 : Bump or bump-like electrical connections, e.g. balls, pillars, posts
• CPC Class Codes: H01L 2225/107 : Indirect electrical connections, e.g. via an interposer, a flexible substrate, using TAB printed circuits H05K1/00
• CPC Class Codes: H01L 23/3128 : the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/3171 : the coating being directly applied to the semiconductor body, e.g. passivation layer H01L23/3178 takes precedence
• CPC Class Codes: H01L 23/3192 : Multilayer coating
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/5223 : Capacitor integral with wiring layers
• CPC Class Codes: H01L 23/5227 : Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/60 : Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 23/66 : High-frequency adaptations
• CPC Class Codes: H01L 24/02 : Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/14 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/17 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/50 : Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto thin flexible metallic tape with or without a film carrier H01L23/49572, flexible insulating substrates H01L23/4985, H01L23/5387
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/78 : Apparatus for connecting with wire connectors
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 24/86 : using tape automated bonding [TAB]
• CPC Class Codes: H01L 24/92 : Specific sequence of method steps
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/16 : the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 25/18 : the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01044 : Ruthenium [Ru]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01056 : Barium [Ba]
• CPC Class Codes: H01L 2924/01059 : Praseodymium [Pr]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01083 : Bismuth [Bi]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/0635 : Acrylic polymer
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/07025 : Polyimide
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1421 : RF devices
• CPC Class Codes: H01L 2924/1433 : Application-specific integrated circuit [ASIC]
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19104 : on the semiconductor or solid-state device, i.e. passive-on-chip
• CPC Class Codes: H01L 2924/19105 : in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

Integrated circuit chips and chip packages are disclosed that include an over-passivation scheme at a top of the integrated circuit chip and a bottom scheme at a bottom of the integrated circuit chip using a top post-passivation technology and a bottom structure technology. The integrated circuit chips can be connected to an external circuit or structure, such as ball-grid-array (BGA) substrate, printed circuit board, semiconductor chip, metal substrate, glass substrate or ceramic substrate, through the over-passivation scheme or the bottom scheme. Related fabrication techniques are described.

Claims

1. A module comprising:

a substrate;

a processor unit on said substrate, wherein said processor unit comprises a first cache memory chip over said substrate and a processor chip over said first cache memory chip, wherein said first cache memory chip is connected to said processor chip through a plurality of microbumps between said first cache memory chip and said processor chip, wherein a pitch between a neighboring two of said plurality of microbumps is smaller than 60 micrometers;

a mass storage on said substrate, wherein said mass storage comprises a first memory chip over said substrate and a second memory chip over said first memory chip, wherein said first memory chip is connected to said second memory chip through at least one first wirebonded wire;

a main memory on said substrate, wherein said main memory comprises a first dynamic-random-access-memory chip over said substrate and a second dynamic-random-access-memory chip over said first dynamic-random-access-memory chip; and

a connector connected to said substrate.

2. The module of claim 1, wherein the module is implemented in a computer, a mobile phone, a mobile compuphone, a camera, an electronic book, a digital picture frame, an automobile electronic product, a 3D video display, a 3D television, a 3D video game player, a projector, or a server used for cloud computing.

3. The module of claim 1, wherein said processor chip comprises a central-processing-unit (CPU) circuit block designed by x86 architecture or by non x86 architectures, a graphics-processing-unit (GPU) circuit block, a baseband circuit block, a digital-signal-processing (DSP) circuit block, or a wireless local area network (WLAN) circuit block.

4. The module of claim 1, wherein said processor chip comprises a central-processing-unit (CPU) chip designed by x86 architecture or by non x86 architectures.

5. The module of claim 1, wherein said processor chip comprises a system-on chip (SOC) comprising a baseband circuit block, a wireless local area network (WLAN) circuit block and a central-processing-unit (CPU) circuit block designed by x86 architecture or by non x86 architectures, but not comprising any graphics-processing-unit (GPU) circuit block.

6. The module of claim 1, wherein said first cache memory chip comprises a dynamic-random-access-memory (DRAM) chip, a synchronous-dynamic-random-access-memory (SDRAM) chip, or a static-random-access-memory (SRAM) chip.

7. The module of claim 1, wherein said first cache memory chip has a memory size between 10 megabytes and 32 gigabytes.

8. The module of claim 1, wherein said first cache memory chip is connected to said substrate through at least one second wirebonded wire.

9. The module of claim 1, wherein said first cache memory chip comprises a silicon substrate, a plurality of through-silicon vias in said silicon substrate, a bottom scheme at a backside of said silicon substrate and in said plurality of through-silicon vias, a first dielectric layer over a top side of said silicon substrate, a first metal layer over said first dielectric layer, a second dielectric layer over said first metal layer, a second metal layer over said second dielectric layer, and a passivation layer over said top side of said silicon substrate, over said first and second dielectric layers and over said first and second metal layers, wherein each of a plurality of openings in said passivation layer is over a respective one of a plurality of contact points of said second metal layer, and said plurality of contact points is at bottoms of said plurality of openings, wherein said plurality of microbumps is connected to said plurality of contact points through said plurality of openings, wherein said bottom scheme comprises a metal bump between said silicon substrate and said substrate, wherein said first cache memory chip is connected to said substrate through said metal bump.

10. The module of claim 1, wherein said first memory chip comprises a flash memory chip or a dynamic-random-access-memory (DRAM) chip.

11. The module of claim 1, wherein said processor unit further comprises a second cache memory chip over said processor chip, wherein said second cache memory chip is connected to said processor chip.

12. The module of claim 1, wherein said second memory chip has a right portion overhanging said first memory chip, and said first memory chip has a left portion not vertically under said second memory chip, wherein said second memory chip has a left sidewall recessed from that of said first memory chip.

13. The module of claim 1 further comprising a radio frequency (RF) module on said substrate.

14. The module of claim 1, wherein said first dynamic-random-access-memory chip comprises a first silicon substrate, a first dielectric layer over said first silicon substrate, a first metal layer over said first dielectric layer, a second dielectric layer over said first metal layer, a second metal layer over said second dielectric layer, and a first passivation layer over said first silicon substrate, over said first and second dielectric layers and over said first and second metal layers, wherein each of a plurality of openings in said first passivation layer is over a respective one of a plurality of contact points of said second metal layer, and said plurality of contact points is at bottoms of said plurality of openings, wherein said second dynamic-random-access-memory chip comprises a second silicon substrate, a plurality of through-silicon vias in said second silicon substrate, a bottom scheme at a backside of said second silicon substrate and in said plurality of through-silicon vias, a third dielectric layer over a top side of said second silicon substrate, a third metal layer over said third dielectric layer, a fourth dielectric layer over said third metal layer, a fourth metal layer over said fourth dielectric layer, and a second passivation layer over said top side of said second silicon substrate, over said third and fourth dielectric layers and over said third and fourth metal layers, wherein said bottom scheme comprises a metal bump between said second silicon substrate and said first dynamic-random-access-memory chip, wherein said metal bump is connected to one of said plurality of contact points through one of said plurality of openings, wherein said second dynamic-random-access-memory chip is connected to said first dynamic-random-access-memory chip through said metal bump.

15. The module of claim 1, wherein said connector is used for connecting to a charger, a game player, a display, or a television.

16. The module of claim 1, wherein said connector comprises a universal serial bus (USB), a high-definition multimedia interface (HDMI), a DisplayPort, an IEEE 1394, or an optical connector.

17. The module of claim 1, wherein said first cache memory chip comprises a first metal pad, a second metal pad, a testing interface circuit having a first node connected to said first metal pad, a first inter-chip buffer connected to said first metal pad and to said first node of said testing interface circuit, an off-chip buffer having a first node connected to a second node of said testing interface circuit and a second node connected to said second metal pad, and an off-chip electro static discharge (ESD) circuit connected to said second node of said off-chip buffer and to said second metal pad, wherein one of said plurality of microbumps is on said first metal pad, wherein said one of said plurality of microbumps is connected to said first inter-chip buffer and to said first node of said testing interface circuit through said first metal pad, wherein said second metal pad is not connected upwards to said processor chip through any microbump between said first cache memory chip and said processor chip.

18. The module of claim 17, wherein said off-chip buffer comprises a first NMOS transistor, and said first inter-chip buffer comprises a second NMOS transistor, wherein a ratio of a physical channel width to a physical channel length of said first NMOS transistor is greater than a ratio of a physical channel width to a physical channel length of said second NMOS transistor by more than 3 times.

19. The module of claim 17, wherein said processor chip comprises a third metal pad and a second inter-chip buffer connected to said third metal pad, wherein said one of said plurality of microbumps is between said first and third metal pads, wherein said one of said plurality of microbumps is connected to said second inter-chip buffer through said third metal pad, wherein said first inter-chip buffer is connected to said second inter-chip buffer through, in sequence, said first metal pad, said one of said plurality of microbumps, and said third metal pad.

20. The module of claim 19, wherein there is no electro static discharge (ESD) circuit connected to a path between said first inter-chip buffer and said second inter-chip buffer.