Manufacturing method of group III nitride semiconductor

• US 20100248455A1
• Filed: 02/26/2010
• Published: 09/30/2010
• Est. Priority Date: 03/24/2009
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Okuno, Koji
• Granted Patent: US 8,465,997 B2
• Time in Patent Office: Days
• US Class Current: 438/478
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02573 Conductivity type
• CPC Class Codes: H01L 21/02609 Crystal orientation

Abstract

A manufacturing method of a group III nitride semiconductor comprising: preparing a substrate including a buffer layer; forming a first layer on the buffer layer from a group III nitride semiconductor by MOCVD while doping an anti-surfactant, wherein a thickness of the first layer is equal to or thinner than 2 μm; forming a second layer on the first layer from a group III nitride semiconductor by MOCVD while doping at least one of surfactant and an anti-surfactant; and controlling a crystalline quality and a surface flatness of the second layer by adjusting an amount of the anti-surfactant and the surfactant doped during the formation of the second layer.

Claims

1. A manufacturing method of a group III nitride semiconductor comprising:

preparing a substrate including a buffer layer;

forming a first layer from a group III nitride semiconductor doped with an anti-surfactant by MOCVD on the buffer layer, wherein a thickness of the first layer is equal to or thinner than 2 μ

m;

forming a second layer on the first layer from a group III nitride semiconductor doped with at least one of surfactant and an anti-surfactant by MOCVD; and

controlling a crystalline quality and a surface flatness of the second layer by adjusting an amount of the anti-surfactant and the surfactant doped during the formation of the second layer.

2. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein an anti-surfactant concentration in the second layer is lower than an anti-surfactant concentration in the first layer, or the second layer is non-doped.

3. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein the second layer is doped by the surfactant.

4. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein the step forming the second layer comprises:

forming a non-doped third layer on the first layer from a group III nitride semiconductor; and

forming a fourth layer on the third layer from a group III nitride semiconductor while doping a surfactant.

5. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein the step forming the second layer comprises:

forming a fifth layer on the first layer from a group III nitride semiconductor while doping a surfactant; and

forming a non-doped sixth layer on the fifth layer from a group III nitride semiconductor.

7. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein the anti-surfactant for the first layer is Si.

8. The manufacturing method of the group III nitride semiconductor according to claim 7, wherein the concentration of Si in the first layer is 1×

10¹⁸ to 1×

10²⁰/cm³.

9. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein the surfactant for the second layer is Mg.

10. The manufacturing method of the group III nitride semiconductor according to claim 9, wherein the concentration of Mg in the second layer is 1×

10¹⁷ to 1×

10²⁰/cm³.

11. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein the anti-surfactant for the first layer is Si and the surfactant for the second layer is Mg.

12. The manufacturing method of the group III nitride semiconductor according to claim 11, wherein the concentration of Si in the first layer is 1×

10¹⁸ to 1×

10²⁰/cm³ and the concentration of Mg in the second layer is 1×

10¹⁷ to 1×

10²⁰/cm³.

13. The manufacturing method of the group III nitride semiconductor according to claim 1, comprising:

alternately stacking the first layer and the second layer repeatedly more than once on the firstly formed second layer.

15. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein a surface of the substrate on which the first layer formed has convexes and concaves.

16. The manufacturing method of the group III nitride semiconductor according to claim 1, wherein the first layer and the second layer are GaN.

17. The manufacturing method of the group RE nitride semiconductor according to claim 1, wherein the first layer and the second layer grow in a same crystal growth condition.

6. A manufacturing method of a group III nitride semiconductor comprising:

preparing a substrate including a buffer layer;

forming a non-doped first layer from a group III nitride semiconductor by MOCVD, a thickness of the first layer equal to or thinner than 2 μ

m;

forming a second layer from a group III nitride semiconductor doped with a surfactant by MOCVD.

14. The manufacturing method of the group III nitride semiconductor according to claim 6, comprising:

stacking the first layer and the second layer repeatedly more than once on the firstly formed second layer.