METHODS OF FABRICATING SILICON OXIDE LAYERS USING INORGANIC SILICON PRECURSORS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING THE SAME

• US 20100248465A1
• Filed: 03/24/2010
• Published: 09/30/2010
• Est. Priority Date: 03/24/2009
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Ahn, Jae-Young, Noh, Jin-Tae, Yi, In-Sun, Choi, Si-Young, Hwang, Ki-Hyun
• Granted Patent: US 8,227,357 B2
• Time in Patent Office: Days
• US Class Current: 438/591
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: H01L 29/40114 the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
• CPC Class Codes: H01L 29/40117 the electrodes comprising a charge-trapping insulator
• CPC Class Codes: H10B 41/30 characterised by the memory core region
• CPC Class Codes: H10B 43/30 characterised by the memory core region

Abstract

Methods of fabricating a silicon oxide layer using an inorganic silicon precursor and methods of fabricating a semiconductor device using the same are provided. The methods of fabricating a semiconductor device include forming a tunnel insulating layer and a charge storage layer on a substrate; forming a dielectric layer structure on the charge storage layer using an atomic layer deposition (ALD) method, the dielectric layer structure including a first dielectric layer formed of silicon oxide, a second dielectric layer on the first dielectric layer formed of a material different from the material forming the first dielectric layer, and a third dielectric layer formed of the silicon oxide on the second dielectric layer; and forming a control gate on the dielectric layer structure. The first and third dielectric layers formed of the silicon oxide are formed using a first gas including an inorganic silicon precursor, a second gas including hydrogen gas or a hydrogen component, and a third gas including an oxide gas.

Claims

1. A method of fabricating a semiconductor device, comprising:

forming a tunnel insulating layer and a charge storage layer on a substrate;

forming a dielectric layer structure on the charge storage layer using an atomic layer deposition (ALD) method, the dielectric layer structure comprising a first dielectric layer formed of silicon oxide, a second dielectric layer on the first dielectric layer formed of a material different from a material forming the first dielectric layer, and a third dielectric layer formed of the silicon oxide on the second dielectric layer; and

forming a control gate on the dielectric layer structure,

wherein the first and third dielectric layers formed of the silicon oxide are formed using a first gas comprising an inorganic silicon precursor, a second gas comprising a hydrogen gas or a hydrogen component, and a third gas comprising an oxide gas.

2. The method of claim 1, wherein forming of the first and third dielectric layers comprise:

providing the first gas;

removing a first non-reacting gas by providing a first purge gas;

providing the second and third gases; and

removing a second and third non-reacting gases by providing a second purge gas.

3. The method of claim 2, wherein an amount of the second gas is less than an amount of the third gas.

4. The method of claim 1, wherein forming the first and third dielectric layer comprises:

removing a first non-reacting gas by providing a first purge gas;

providing the second gas;

removing a second non-reacting gas by providing a second purge gas;

providing the third gas; and

removing a third non-reacting gas by providing a third purge gas.

5. The method of claim 1, wherein the inorganic silicon precursor is hexachlorodislane (HCD).

6. The method of claim 1, wherein the second dielectric layer is formed of silicon nitride, and the dielectric layer structure is formed in-situ.

7. The method of claim 1, further comprising performing thermal treatment of the dielectric layer structure before forming the control gate.

8. A method of fabricating a semiconductor device, comprising:

forming a structure on a substrate; and

forming a silicon oxide layer on the structure employing an atomic layer deposition (ALD) method using a first gas comprising an inorganic silicon precursor, a second gas comprising a hydrogen gas or a hydrogen component, and a third gas comprising an oxide gas.

9. The method of claim 8, wherein the inorganic silicon precursor is hexachlorodislane (HCD).

10. The method of claim 8, wherein the structure is a gate stack formed on the substrate, and the method further comprises forming a gate spacer using the silicon oxide layer.