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METHODS OF FABRICATING SILICON OXIDE LAYERS USING INORGANIC SILICON PRECURSORS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING THE SAME

  • US 20100248465A1
  • Filed: 03/24/2010
  • Published: 09/30/2010
  • Est. Priority Date: 03/24/2009
  • Status: Active Grant
First Claim
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1. A method of fabricating a semiconductor device, comprising:

  • forming a tunnel insulating layer and a charge storage layer on a substrate;

    forming a dielectric layer structure on the charge storage layer using an atomic layer deposition (ALD) method, the dielectric layer structure comprising a first dielectric layer formed of silicon oxide, a second dielectric layer on the first dielectric layer formed of a material different from a material forming the first dielectric layer, and a third dielectric layer formed of the silicon oxide on the second dielectric layer; and

    forming a control gate on the dielectric layer structure,wherein the first and third dielectric layers formed of the silicon oxide are formed using a first gas comprising an inorganic silicon precursor, a second gas comprising a hydrogen gas or a hydrogen component, and a third gas comprising an oxide gas.

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