Methods of Forming Printable Integrated Circuit Devices and Devices Formed Thereby
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0 Petitions
Accused Products
Abstract
Methods of forming integrated circuit devices include forming a sacrificial layer on a handling substrate and forming a semiconductor active layer on the sacrificial layer. A step is performed to selectively etch through the semiconductor active layer and the sacrificial layer in sequence to define an semiconductor-on-insulator (SOI) substrate, which includes a first portion of the semiconductor active layer. A multi-layer electrical interconnect network may be formed on the SOI substrate. This multi-layer electrical interconnect network may be encapsulated by an inorganic capping layer that contacts an upper surface of the first portion of the semiconductor active layer. A step can be performed to selectively etch through the capping layer and the first portion of the semiconductor active layer to thereby expose the sacrificial layer. The sacrificial layer may be selectively removed from between the first portion of the semiconductor active layer and the handling substrate to thereby define a suspended integrated circuit chip encapsulated by the capping layer.
394 Citations
36 Claims
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1-18. -18. (canceled)
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19. A method of forming an integrated circuit device, comprising:
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forming a substrate comprising a semiconductor active layer on an underlying sacrificial layer; forming a multi-layer electrical interconnect network comprising a plurality of interlayer dielectric layers, on the substrate; selectively etching through the plurality of interlayer dielectric layers to expose an upper surface of the semiconductor active layer; encapsulating the multi-layer electrical interconnect network with an inorganic capping layer that contacts the exposed upper surface of the semiconductor active layer; selectively etching through the capping layer and the semiconductor active layer to expose the sacrificial layer; and
thenremoving the sacrificial layer from the substrate to thereby suspend the semiconductor active layer from the handling substrate. - View Dependent Claims (20, 21, 22, 23)
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24. A method of forming an integrated circuit device, comprising:
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forming a sacrificial layer on a handling substrate; forming a semiconductor active layer on the sacrificial layer; selectively etching through semiconductor active layer and the sacrificial layer in sequence to define a trench therein having a bottom adjacent the handling substrate; filling the trench within an inorganic anchor; selectively etching through the semiconductor active layer to thereby expose the sacrificial layer; and removing the sacrificial layer from between the handling substrate and the semiconductor active layer to thereby suspend the semiconductor active layer from the inorganic anchor. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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31. A method of forming an integrated circuit device, comprising:
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selectively etching through a multi-layer electrical interconnect network to expose a semiconductor active layer; encapsulating the multi-layer electrical interconnect network with an inorganic capping layer that contacts the semiconductor active layer; selectively etching through the inorganic capping layer and the semiconductor active layer in sequence to expose a sacrificial layer extending between the semiconductor active layer and a handling substrate; and removing the sacrificial layer to thereby suspend the semiconductor active layer and the encapsulated multi-layer electrical interconnect network opposite the handling substrate. - View Dependent Claims (32, 33, 34, 35)
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36-54. -54. (canceled)
Specification