MONITORING DEVICE AND MONITORING METHOD

• US 20100250149A1
• Filed: 03/23/2010
• Published: 09/30/2010
• Est. Priority Date: 03/25/2009
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Omori, Takahiro, Mukai, Minoru, Hirohata, Kenji
• Granted Patent: US 8,321,157 B2
• Time in Patent Office: Days
• US Class Current: 702/34
• CPC Class Codes: G01R 31/2849 Environmental or reliability testing, e.g. burn-in or validation tests of individual semiconductors G01R31/2642; of printed circuits boards G01R31/2817; of IC's G01R31/2855

Abstract

A dummy junction which will break earlier than a target junction is arranged on a board. A history of load applied to the dummy junction until the dummy junction actually breaks is recorded, and an estimated lifetime of the target junction is calibrated when a lifetime of the dummy junction estimated by the history of the load is largely different from an actual lifetime of the dummy junction. The calibration is performed by subtracting a value of an unmeasurable load from the estimated lifetime of the target junction based on load ever applied to the target junction, and the unmeasurable load is calculated based on the difference of the actual lifetime and estimated lifetime of the dummy junction.

Claims

1. A monitoring device for an electronic device which includes a board and at least one electronic component mounted thereon, the board and the electronic component being coupled each other through a target junction and a dummy junction at difference positions, comprising:

a temperature sensor configured to detect a temperature in the electronic device;

a temperature information database configured to store variation history of the temperature;

a sensor temperature/strain database configured to store a strain value generated in the target junction and a strain value generated in the dummy junction with respect to each of a plurality temperatures;

a fatigue characteristic database configured to store

a dummy damage function representing a relation among a strain amplitude representing magnitude of variation of the strain value, a cycle number of the strain amplitude and a temperature damage value of the dummy junction indicating an accumulated fatigue on the dummy junction due to temperature variation, and

a target damage function representing a relation among a strain amplitude, a cycle number of the strain amplitude and a temperature damage value of the target junction indicating an accumulated fatigue on the target junction due to temperature variation;

a complex load database configured to store;

(a) dummy lifetime data which defines a relation between the temperature damage value of the dummy junction and a load damage value indicating an accumulated fatigue on the dummy junction due to a first load which is different from the temperature variation;

(b) target lifetime data which defines a relation between the temperature damage value of the target junction and a load damage value indicating an accumulated fatigue on the target junction due to the first load; and

(c) load correspondence data which defines a relation between the load damage value of the dummy junction and the load damage value of the target junction;

an electrical characteristic measurer configured to measure an electrical characteristic of the dummy junction; and

a lifetime computing unit configured to;

(A-1) calculate the temperature damage value of the target junction by using the target damage function based on the variation history;

(A-2) estimate a lifetime of the target junction based on comparison between the temperature damage value of the target junction and a first threshold value being a temperature damage value corresponding to 0 of the load damage value of the target junction in the target lifetime data;

(B-1) calculate the temperature damage value of the dummy junction by using the dummy damage function based on the temperature history data when a break of the dummy junction is detected based on the electrical characteristic measured by the electrical characteristic measurer;

(B-2) compare the temperature damage value of the dummy junction with a second threshold value being a temperature damage value corresponding to 0 of the load damage value of the dummy junction in the dummy lifetime data;

(B-3) calculate the load damage value of the dummy junction based on the dummy lifetime data according to the temperature damage value of the dummy junction when a difference between the second threshold value and the temperature damage value of the dummy junction is equal to or greater than a predetermined value;

(B-4) calculate the load damage value of the target junction based on the load damage value of the dummy junction by using the load correspondence function; and

(B-5) change the first threshold value to a temperature damage value corresponding to the load damage value of the target junction in the target lifetime data.

2. The device according to claim 1, wherein the lifetime computing unit determines not to change the first threshold value when a difference between the second threshold value and the temperature damage value of the dummy junction is smaller than the predetermined value.

3. The device according to claim 1, wherein each of the dummy junction and the target junction is a solder junction or a lead wire.

4. The device according to claim 1, wherein the first load is a vibration or a shock induced by an external force.

5. A monitoring method for an electronic device which includes a board and at least one electronic component mounted thereon, the board and the electronic component being coupled each other through a target junction and a dummy junction at difference positions, comprising:

reading in a temperature information database configured to store variation history of the temperature;

reading in a sensor temperature/strain database configured to store a strain value generated in the target junction and a strain value generated in the dummy junction with respect to each of a plurality temperatures;

reading in a fatigue characteristic database configured to store

a dummy damage function representing a relation among a strain amplitude representing magnitude of variation of the strain value, a cycle number of the strain amplitude and a temperature damage value of the dummy junction indicating an accumulated fatigue on the dummy junction due to temperature variation, and

a target damage function representing a relation among a strain amplitude, a cycle number of the strain amplitude and a temperature damage value of the target junction indicating an accumulated fatigue on the target junction due to temperature variation;

reading in a complex load database configured to store;

(a) dummy lifetime data which defines a relation between the temperature damage value of the dummy junction and a load damage value indicating an accumulated fatigue on the dummy junction due to a first load which is different from the temperature variation;

(b) target lifetime data which defines a relation between the temperature damage value of the target junction and a load damage value indicating an accumulated fatigue on the target junction due to the first load; and

(c) load correspondence data which defines a relation between the load damage value of the dummy junction and the load damage value of the target junction;

measuring an electrical characteristic of the dummy junction; and

(A-1) calculating the temperature damage value of the target junction by using the target damage function based on the variation history;

(A-2) estimating a lifetime of the target junction based on comparison between the temperature damage value of the target junction and a first threshold value which is a temperature damage value corresponding to 0 of the load damage value of the target junction in the target lifetime data;

(B-1) calculating the temperature damage value of the dummy junction by using the dummy damage function based on the variation history when a break of the dummy junction is detected based on the electrical characteristic of the dummy junction;

(B-2) comparing the temperature damage value of the dummy junction with a second threshold value being a temperature damage value corresponding to 0 of the load damage value of the dummy junction in the dummy lifetime data;

(B-3) calculating the load damage value of the dummy junction based on the dummy lifetime data according to the temperature damage value of the dummy junction when a difference between the second threshold value and the temperature damage value of the dummy junction is equal to or greater than a predetermined value;

(B-4) calculating the load damage value of the target junction based on the load damage value of the dummy junction by using the load correspondence function; and

(B-5) changing the first threshold value to a temperature damage value corresponding to the load damage value of the target junction in the target lifetime data.