METHOD FOR FORMING GATE STRUCTURES

• US 20100252176A1
• Filed: 05/20/2008
• Published: 10/07/2010
• Est. Priority Date: 06/28/2007
• Status: Active Grant

• Current Assignee: 3M Innovative Properties Company (3M Company)
• Original Assignee: 3M Innovative Properties Company (3M Company)
• Inventors: Schubert, Robert J., Haase, Michael A., McClure, Donald J., Bench, Michael W., Ho, Grace L., Tokie, Jeffrey H.
• Granted Patent: US 8,318,552 B2
• Time in Patent Office: Days
• US Class Current: 156/150
• CPC Class Codes: H01L 21/6776 Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A process for forming gate structures is described. A web comprises a substrate, a plurality of conductive elements disposed on the substrate, and a conductive anodization bus. The web is moved through an anodization station to form a plurality of gate structures comprising a plurality of gate dielectrics adjacent to a plurality of gate electrodes. A process for forming electronic devices further providing a semiconductor, a source electrode, and a drain electrode is described.

Claims

1. A process for forming a plurality of gate structures, the process comprising:

providing a substrate comprising (a) a backing, (b) a plurality of conductive elements disposed on the backing, and (c) a conductive anodization bus parallel to a first edge of the backing, wherein a first conductive element and at least one second conductive element are electrically connected to the anodization bus;

moving the substrate, wherein the substrate is delivered with a substrate delivery roll and received with a substrate receiving roll, the substrate extends from the substrate delivery roll to the substrate receiving roll, and the substrate passes from the substrate delivery roll to the substrate receiving roll;

passing the substrate through an anodization station, the anodization station comprising (a) an anodization bath comprising an entry location and an exit location for the substrate, (b) an electrochemical solution retained within the anodization bath, wherein the electrochemical solution has a surface, (c) a cathode located within the electrochemical solution, the plurality of conductive elements positioned between the backing and the cathode, (d) an anode comprising (i) the anodization bus, wherein the anodization bus is positioned above the surface of the electrochemical solution, (ii) the plurality of conductive elements, wherein at least a portion of the plurality of conductive elements are positioned below the surface of the electrochemical solution, and (iii) a plurality of clamps, wherein at least one clamp is in electrical contact with the anodization bus, and (e) a power supply attached to the anode and the cathode; and

anodizing at least a portion of the surface of the plurality of conductive elements exposed to the electrochemical solution to form a plurality of gate structures comprising a plurality of gate dielectrics adjacent to a plurality of gate electrodes, the plurality of gate electrodes positioned between the plurality of gate dielectrics and the backing.

2. The process of claim 1, wherein the backing comprises a metal, metal alloy, polyester, polyimide, polyetherimide, liquid crystal polymer, polycarbonate, or combinations thereof.

3. The process of claim 1, wherein the plurality of conductive elements comprises aluminum, tantalum, niobium, zirconium, tungsten, titanium, hafnium, or combinations thereof.

4. The process of claim 1, further comprising a horizontal conveyor to support and move the substrate passing through the anodization station, the horizontal conveyor mounted above the substrate and moving in a plane parallel to a substrate oriented in a vertical plane passing through the anodization bath, wherein the plurality of clamps are mounted to move with the horizontal conveyor.

5. The process of claim 4, wherein the plurality of clamps are aligned with the substrate, the at least one clamp (a) attaching to the anodization bus of the substrate prior to the entry location, (b) moving the substrate through the anodization bath, and (c) releasing the substrate after the exit location, wherein the horizontal conveyor comprises a clamp cam for independently opening and closing the at least one clamp.

6. A process for forming a plurality of electronic devices, the process comprising:

providing a substrate comprising (a) a backing, (b) a plurality of conductive elements disposed on the backing, and (c) a conductive anodization bus parallel to a first edge of the backing, wherein a first conductive element and at least one second conductive element are electrically connected to the anodization bus;

moving the substrate, wherein the substrate is delivered with a substrate delivery roll and received with a substrate receiving roll, the substrate extends from the substrate delivery roll to the substrate receiving roll, and the substrate passes from the substrate delivery roll to the substrate receiving roll;

passing the substrate through an anodization station, the anodization station comprising (a) an anodization bath comprising an entry location and an exit location for the substrate, (b) an electrochemical solution retained within the anodization bath, wherein the electrochemical solution has a surface, (c) a cathode located within the electrochemical solution, the plurality of conductive elements positioned between the backing and the cathode, (d) an anode comprising (i) the anodization bus, wherein the anodization bus is positioned above the surface of the electrochemical solution, (ii) the plurality of conductive elements, wherein at least a portion of the plurality of conductive elements are positioned below the surface of the electrochemical solution, and (iii) a plurality of clamps, wherein at least one clamp is in electrical contact with the anodization bus, and (e) a power supply attached to the anode and the cathode;

anodizing at least a portion of the surface of the plurality of conductive elements exposed to the electrochemical solution to form a plurality of gate structures comprising a plurality of gate dielectrics adjacent to a plurality of gate electrodes, the plurality of gate electrodes positioned between the plurality of gate dielectrics and the backing;

providing a semiconductor adjacent to the plurality of gate dielectrics; and

providing both a source electrode and a drain electrode adjacent to a surface of the semiconductor opposite the plurality of gate structures, wherein the source electrode is not in contact with the drain electrode.

7. The process of claim 6, wherein the electronic device is a thin film transistor.

8. The process of claim 6, wherein the electronic device is an active matrix display backplane.

9. The process of claim 6, wherein the semiconductor is inorganic.

10. The process of claim 6, further comprising patterning the semiconductor adjacent to the plurality of gate dielectrics.

11. The process of claim 6, wherein the semiconductor comprises zinc oxide, indium zinc oxide, zinc tin oxide, indium gallium zinc oxide, or combinations thereof.

12. The process of claim 6, wherein both the source electrode and the drain electrode comprise aluminum, gold, copper, silver, titanium, chromium, metal oxides, doped semiconductors, or combinations thereof.

13. A process for forming a plurality of electronic devices, the process comprising:

providing a substrate comprising (a) a backing, (b) a plurality of conductive elements disposed on the backing, and (c) a conductive anodization bus parallel to a first edge of the backing, wherein a first conductive element and at least one second conductive element are electrically connected to the anodization bus;

moving the substrate, wherein the substrate is delivered with a substrate delivery roll and received with a substrate receiving roll, the substrate extends from the substrate delivery roll to the substrate receiving roll, and the substrate passes from the substrate delivery roll to the substrate receiving roll;

passing the substrate through an anodization station, the anodization station comprising (a) an anodization bath comprising an entry location and an exit location for the substrate, (b) an electrochemical solution retained within the anodization bath, wherein the electrochemical solution has a surface, (c) a cathode located within the electrochemical solution, the plurality of conductive elements positioned between the backing and the cathode, (d) an anode comprising (i) the anodization bus, wherein the anodization bus is positioned above the surface of the electrochemical solution, (ii) the plurality of conductive elements, wherein at least a portion of the plurality of conductive elements are positioned below the surface of the electrochemical solution, and (iii) a plurality of clamps, wherein at least one clamp is in electrical contact with the anodization bus, and (e) a power supply attached to the anode and the cathode;

anodizing at least a portion of the surface of the plurality of conductive elements exposed to the electrochemical solution to form a plurality of gate structures comprising a plurality of gate dielectrics adjacent to a plurality of gate electrodes, the plurality of gate electrodes positioned between the plurality of gate dielectrics and the backing;

providing both a source electrode and a drain electrode adjacent to the plurality of gate dielectrics, wherein the source electrode is not in contact with the drain electrode; and

providing a semiconductor adjacent to a surface of both the source electrode and the drain electrode, both the source electrode and the drain electrode opposite the plurality of gate.

14. The process of claim 13, wherein the electronic device is a thin film transistor.

15. The process of claim 13, wherein the electronic device is an active matrix display backplane.

16. The process of claim 13, wherein the semiconductor is inorganic.

17. The process of claim 13, further comprising patterning the semiconductor adjacent to the source electrode and the drain electrode.

18. The process of claim 13, wherein the semiconductor comprises zinc oxide, indium zinc oxide, zinc tin oxide, indium gallium zinc oxide, or combinations thereof.

19. The process of claim 13, wherein both the source electrode and the drain electrode comprise aluminum, gold, copper, silver, titanium, chromium, metal oxides, doped semiconductors, or combinations thereof.

20. A process for forming a plurality of gate structures, the process comprising:

providing a substrate comprising (a) a backing, (b) a plurality of conductive elements disposed on the backing, and (c) a conductive anodization bus parallel to a first edge of the backing, wherein a first conductive element and at least one second conductive element are electrically connected to the anodization bus;

moving the substrate, wherein the substrate is delivered with a substrate delivery roll and received with a substrate receiving roll, the substrate extends from the substrate delivery roll to the substrate receiving roll, and the substrate passes from the substrate delivery roll to the substrate receiving roll;

passing the substrate through an anodization station, the anodization station comprising (a) an anodization bath comprising an entry location and an exit location for the substrate, (b) an electrochemical solution retained within the anodization bath, wherein the electrochemical solution has a surface, (c) a cathode located within the electrochemical solution, the cathode located at a distance from the entry location, the distance being sufficient to prevent arcing at the entry location, wherein the plurality of conductive elements is positioned between the backing and the cathode, (d) an anode comprising (i) the anodization bus, wherein the anodization bus is positioned above the surface of the electrochemical solution, (ii) the plurality of conductive elements, wherein at least a portion of the plurality of conductive elements are positioned below the surface of the electrochemical solution, and (iii) a plurality of clamps, wherein at least one clamp is in electrical contact with the anodization bus, and (e) a power supply attached to the anode and the cathode; and

anodizing at least a portion of the surface of the plurality of conductive elements exposed to the electrochemical solution to form a plurality of gate structures comprising a plurality of gate dielectrics adjacent to a plurality of gate electrodes, the plurality of gate electrodes positioned between the plurality of gate dielectrics and the backing

21. A process for forming a plurality of electronic devices, the process comprising:

providing a substrate comprising (a) a backing, (b) a plurality of conductive elements disposed on the backing, and (c) a conductive anodization bus parallel to a first edge of the backing, wherein a first conductive element and at least one second conductive element are electrically connected to the anodization bus;

moving the substrate, wherein the substrate is delivered with a substrate delivery roll and received with a substrate receiving roll, the substrate extends from the substrate delivery roll to the substrate receiving roll, and the substrate passes from the substrate delivery roll to the substrate receiving roll;

passing the substrate through an anodization station, the anodization station comprising (a) an anodization bath comprising an entry location and an exit location for the substrate, (b) an electrochemical solution retained within the anodization bath, wherein the electrochemical solution has a surface, (c) a cathode located within the electrochemical solution, the cathode located at a distance from the entry location, the distance being sufficient to prevent arcing at the entry location, wherein the plurality of conductive elements is positioned between the backing and the cathode, (d) an anode comprising (i) the anodization bus, wherein the anodization bus is positioned above the surface of the electrochemical solution, (ii) the plurality of conductive elements, wherein at least a portion of the plurality of conductive elements are positioned below the surface of the electrochemical solution, and (iii) a plurality of clamps, wherein at least one clamp is in electrical contact with the anodization bus, and (e) a power supply attached to the anode and the cathode;

anodizing at least a portion of the surface of the plurality of conductive elements exposed to the electrochemical solution to form a plurality of gate structures comprising a plurality of gate dielectrics adjacent to a plurality of gate electrodes, the plurality of gate electrodes positioned between the plurality of gate dielectrics and the backing;

providing a semiconductor adjacent to the plurality of gate dielectrics; and

providing both a source electrode and a drain electrode adjacent to a surface of the semiconductor opposite the plurality of gate structures, wherein the source electrode is not in contact with the drain electrode.

22. A process for forming a plurality of electronic devices, the process comprising:

providing a substrate comprising (a) a backing, (b) a plurality of conductive elements disposed on the backing, and (c) a conductive anodization bus parallel to a first edge of the backing, wherein a first conductive element and at least one second conductive element are electrically connected to the anodization bus;

moving the substrate, wherein the substrate is delivered with a substrate delivery roll and received with a substrate receiving roll, the substrate extends from the substrate delivery roll to the substrate receiving roll, and the substrate passes from the substrate delivery roll to the substrate receiving roll;

passing the substrate through an anodization station, the anodization station comprising (a) an anodization bath comprising an entry location and an exit location for the substrate, (b) an electrochemical solution retained within the anodization bath, wherein the electrochemical solution has a surface, (c) a cathode located within the electrochemical solution, the cathode located at a distance from the entry location, the distance being sufficient to prevent arcing at the entry location, wherein the plurality of conductive elements is positioned between the backing and the cathode, (d) an anode comprising (i) the anodization bus, wherein the anodization bus is positioned above the surface of the electrochemical solution, (ii) the plurality of conductive elements, wherein at least a portion of the plurality of conductive elements are positioned below the surface of the electrochemical solution, and (iii) a plurality of clamps, wherein at least one clamp is in electrical contact with the anodization bus, and (e) a power supply attached to the anode and the cathode;

anodizing at least a portion of the surface of the plurality of conductive elements exposed to the electrochemical solution to form a plurality of gate structures comprising a plurality of gate dielectrics adjacent to a plurality of gate electrodes, the plurality of gate electrodes positioned between the plurality of gate dielectrics and the backing;

providing both a source electrode and a drain electrode adjacent to the plurality of gate dielectrics, wherein the source electrode is not in contact with the drain electrode; and

providing a semiconductor adjacent to a surface of both the source electrode and the drain electrode, both the source electrode and the drain electrode opposite the plurality of gate.

23. A process for forming a plurality of electronic devices, the process comprising:

providing a substrate comprising a plurality of conductive elements electrically connected to a conductive anodization bus;

passing the substrate through an anodization bath comprising;

an entry location for the substrate;

an exit location for the substrate; and

an electrochemical solution comprising;

a surface;

a cathode located within the electrochemical solution at a distance from the entry location, the distance being sufficient to prevent arcing at the entry location; and

an anode comprising the anodization bus, wherein;

the substrate is oriented in a vertical plane passing through the anodization bath;

the anodization bus is positioned above the surface of the electrochemical solution;

at least a portion of the plurality of conductive elements is positioned below the surface of the electrochemical solution;

a low voltage is applied to the entry location; and

wherein;

a maximum voltage is applied in a region proximate to the exit location.