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LATERAL BIPOLAR JUNCTION TRANSISTOR WITH REDUCED BASE RESISTANCE

  • US 20100252860A1
  • Filed: 04/07/2009
  • Published: 10/07/2010
  • Est. Priority Date: 04/07/2009
  • Status: Active Grant
First Claim
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1. A lateral bipolar junction transistor formed in a semiconductor substrate, comprising:

  • an emitter region;

    a base region surrounding the emitter region;

    a gate disposed at least over a portion of the base region;

    a collector region having at least one open side and being disposed about a periphery of the base region;

    a shallow trench isolation (STI) region disposed about a periphery of the collector region;

    a base contact region disposed about a periphery of the STI region; and

    an extension region merging with the base contact region and laterally extending to the gate on the at least one open side of the collector region.

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