FERROELECTRIC THIN FILMS
First Claim
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1. A ferroelectric structure, comprising:
- a first electrode comprising a first layer having a periodic atomic arrangement;
a ferroelectric thin film comprising a first termination and a second termination;
wherein at least a portion of the first layer of the first electrode is in epitaxial contact with at least a portion of the first termination of the ferroelectric thin film; and
wherein the first termination of the ferroelectric thin film has a periodic atomic arrangement that approximately matches the periodic atomic arrangement of the first layer of the first electrode.
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Abstract
Ferroelectric structures and methods of making the structures are presented. The ferroelectric structures can include an electrode in contact with a ferroelectric thin film. The contact can be arranged so that a portion of the atoms of the ferroelectric thin film are in contact with at least a portion of the atoms of the electrode. The electrode can be made of metal, a metal alloy, or a semiconducting material. A second electrode can be used and placed in contact with the ferroelectric thin film. Methods of making and using the ferroelectric structures are also presented.
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Citations
21 Claims
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1. A ferroelectric structure, comprising:
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a first electrode comprising a first layer having a periodic atomic arrangement; a ferroelectric thin film comprising a first termination and a second termination; wherein at least a portion of the first layer of the first electrode is in epitaxial contact with at least a portion of the first termination of the ferroelectric thin film; and wherein the first termination of the ferroelectric thin film has a periodic atomic arrangement that approximately matches the periodic atomic arrangement of the first layer of the first electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A ferroelectric structure, comprising:
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a first electrode comprising a first surface, the first surface having a periodic arrangement of atoms of the first electrode; a ferroelectric thin film comprising a first termination and a second termination; wherein the first termination is formed of a periodic arrangement of at least one type of atom of the ferroelectric thin film; and wherein at least a portion of the periodic arrangement of atoms of the first surface of the first electrode is in epitaxial contact with at least a portion of the periodic arrangement of atoms of the first termination of the ferroelectric thin film. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method of forming a ferroelectric structure, comprising:
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forming a ferroelectric thin film comprising a first termination and a second termination, and wherein the first termination has a periodic arrangement of atoms of the ferroelectric thin film; forming a first electrode comprising a first surface having a periodic arrangement of atoms of the first electrode; wherein at least a portion of the periodic arrangement of atoms of the first surface of the first electrode is formed in epitaxial contact with at least a portion of the periodic arrangement of atoms of the first termination of the ferroelectric thin film. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A method of increasing polarization of a ferroelectric material above a bulk value, comprising:
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providing a ferroelectric material having a bulk polarization value; forming a ferroelectric thin film of the ferroelectric material, the ferroelectric thin film having a first termination and a second termination; providing a first electrode having a first surface; providing a second electrode having a first surface; placing the first surface of the first electrode in epitaxial contact with the first termination; and placing the first surface of the second electrode in epitaxial contact with the second termination.
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Specification