DATA PROCESSING DEVICE, IC CARD AND COMMUNICATION SYSTEM

• US 20100253478A1
• Filed: 04/05/2010
• Published: 10/07/2010
• Est. Priority Date: 04/06/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, KATO, Kiyoshi, KOYAMA, Jun
• Granted Patent: US 8,797,142 B2
• Time in Patent Office: Days
• US Class Current: 340/10.100
• CPC Class Codes: H04W 52/028 switching on or off only a part of the equipment circuit blocks
• CPC Class Codes: Y02D 30/70 in wireless communication networks

Abstract

An object is to provide a data processing device which achieves multiple functions or easy additional providing of a function while suppressing adverse influence on a communication distance or to improve resistance to electrostatic discharge in the data processing device. The data processing device includes an antenna which transmits and receives a first signal to/from a first terminal device through wireless communication, an integrated circuit which executes a process in accordance with the first signal, and a terminal portion which transmits and receives a second signal to/from a second terminal device and has an exposed conductive portion on its surface. A protection circuit is provided between at least one terminal of terminals of the terminal portion and a power supply terminal of a high potential and between the one terminal and a power supply terminal of a low potential.

Claims

1. A data processing device comprising:

an antenna configured to transmit and receive a first signal to and from a first terminal device through wireless communication; and

an integrated circuit configured to execute a process in accordance with the first signal, the integrated circuit including a terminal portion configured to transmit and receive a second signal to and from a second terminal device,

wherein the terminal portion includes a conductive portion having an exposed surface,

wherein the first signal has a carrier wave and a modulated wave generated by modulating an amplitude or a frequency of the carrier wave in accordance with data,

wherein the second signal is a digital signal, and

wherein the terminal portion includes a power supply terminal, a terminal electrically connected to a signal line and a protection circuit electrically connected to the power supply terminal and the signal line.

2. The data processing device according to claim 1,

wherein the integrated circuit includes a first thin film transistor formed over an insulating surface,

wherein the protection circuit has a structure in which at least one diode selected from a PN diode, a PIN diode, a Schottky barrier diode, and a second thin film transistor diode-connected by short-circuit between a gate and a drain of the thin film transistor formed over the insulating surface is provided between the power supply terminal and the terminal for transmitting and receiving the second signal so as to be reverse biased in a normal state, and

wherein each of the first thin film transistor and the diode has a semiconductor film formed in the same step.

3. The data processing device according to claim 2, wherein a p-type impurity region and a n-type impurity region included in the PN diode and the PIN diode are formed in a step in which an impurity region of the second thin film transistor is formed and the p-type impurity region and the n-type impurity region are formed in the semiconductor film.

4. The data processing device according to claim 2, wherein the first thin film transistor comprises a semiconductor film including an oxide semiconductor.

5. The data processing device according to claim 4, wherein the oxide semiconductor comprises zinc oxide, indium oxide, and gallium oxide.

6. An IC card comprising the data processing device according to claim 1 and a base material supporting the data processing device, wherein the base material has a structure body for supporting and fixing the second terminal device when the second terminal device is connected in the terminal portion.

7. A communication system using the data processing device according to claim 1, the first terminal device, and the second terminal device.

8. A data processing device comprising:

an antenna for wireless communication; and

an integrated circuit configured to execute a process in accordance with a signal from the antenna, the integrated circuit including a terminal portion comprising;

a first terminal for communication by direct contact, the first terminal including a conductor having an exposed surface;

a second terminal for supplying a power source, the second terminal including a conductor having an exposed surface; and

a protection circuit configured to release an electrical static charge in the first terminal to the second terminal.

9. The data processing device according to claim 8,

wherein the integrated circuit includes a first thin film transistor formed over an insulating surface,

wherein the protection circuit has a structure in which at least one diode selected from a PN diode, a PIN diode, a Schottky barrier diode, and a second thin film transistor diode-connected by short-circuit between a gate and a drain of the thin film transistor formed over the insulating surface is provided between the second terminal and the first terminal so as to be reverse biased in a normal state, and

wherein each of the first thin film transistor and the diode has a semiconductor film formed in the same step.

10. The data processing device according to claim 9, wherein a p-type impurity region and a n-type impurity region included in the PN diode and the PIN diode are formed in a step in which an impurity region of the second thin film transistor is formed and the p-type impurity region and the n-type impurity region are formed in the semiconductor film.

11. The data processing device according to claim 9, wherein the first thin film transistor comprises a semiconductor film including an oxide semiconductor.

12. The data processing device according to claim 11, wherein the oxide semiconductor comprises zinc oxide, indium oxide, and gallium oxide.

13. An IC card comprising the data processing device according to claim 8 and a base material supporting the data processing device, wherein the base material has a structure body for supporting and fixing a terminal device when the terminal device is connected in the terminal portion.