Methods of preparing a graphene sheet

• US 20100255219A1
• Filed: 02/17/2010
• Published: 10/07/2010
• Est. Priority Date: 04/07/2009
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Jung-hyun, Wenxu, Xianyu, Ma, Dong-joon
• Granted Patent: US 8,632,855 B2
• Time in Patent Office: Days
• US Class Current: 427/596
• CPC Class Codes: H05B 2214/04 Heating means manufactured by using nanotechnology
• CPC Class Codes: H05B 3/145 Carbon only, e.g. carbon black, graphite

Abstract

Methods of preparing a carbon-based sheet are provided, the methods include aligning carbon-containing materials on a substrate and forming the carbon-based sheet on the substrate by performing an annealing process on the substrate including the carbon-containing materials. The carbon-based sheet may be a graphene sheet.

Claims

1. A method of preparing a carbon-based sheet, the method comprising:

aligning a plurality of carbon-containing materials on a substrate; and

forming the carbon-based sheet on the substrate by performing an annealing process on the substrate including the plurality of carbon-containing materials.

2. The method of claim 1, wherein the carbon-based sheet is a graphene sheet.

3. The method of claim 2, wherein the plurality of carbon-containing carbon materials are at least one selected from the group consisting of carbon nanotubes and fullerenes.

4. The method of claim 2, wherein performing the annealing process includes heating portions of the substrate that contact the plurality of carbon-containing materials to a temperature that is greater than a zone melting temperature or a recrystallization temperature of the substrate.

5. The method of claim 2, wherein the substrate is formed of at least one selected from the group consisting of silicon (Si), silicon carbide (SiC), silicon on insulator (SOI), amorphous-Si (a-Si), poly-Si, a-SiC, glass and combinations thereof.

6. The method of claim 2, wherein the substrate is a quartz substrate or a glass substrate on which a thin film is formed of at least one selected from the group consisting of a-Si, poly-si, a-SiC, germanium (Ge), germanium carbide (GeC) and combinations thereof.

7. The method of claim 2, wherein the annealing process is a laser annealing process or a rapid thermal annealing (RTA) process.

8. The method of claim 2, wherein the substrate mixes with the plurality of carbon-containing materials due to the annealing process to form silicon carbide (SiC).

9. The method of claim 2, wherein aligning the plurality of carbon-containing materials includes arranging a plurality of metal catalyst particles on the substrate;

and supplying a gaseous carbon source to the substrate having the plurality of metal catalyst particles.

10. The method of claim 1, wherein the plurality of carbon-containing carbon materials are at least one selected from the group consisting of carbon nanotubes and fullerenes.

11. The method of claim 1, wherein performing the annealing process includes heating portions of the substrate that contact the plurality of carbon-containing materials to a temperature that is greater than a zone melting temperature or a recrystallization temperature of the substrate.

12. The method of claim 1, wherein the substrate is formed of at least one selected from the group consisting of silicon (Si), silicon carbide (SiC), silicon on insulator (SOI), amorphous-Si (a-Si), poly-Si, a-SiC, glass and combinations thereof.

13. The method of claim 1, wherein the substrate is a quartz substrate or a glass substrate on which a thin film is formed of at least one selected from the group consisting of a-Si, poly-si, a-SiC, germanium (Ge), germanium carbide (GeC) and combinations thereof.

14. The method of claim 1, wherein the annealing process is a laser annealing process or a rapid thermal annealing (RTA) process.

15. The method of claim 1, wherein the substrate mixes with the plurality of carbon-containing materials due to the annealing process to form silicon carbide (SiC).

16. The method of claim 1, wherein aligning the plurality of carbon-containing materials includes arranging a plurality of metal catalyst particles on the substrate;

and supplying a gaseous carbon source to the substrate having the plurality of metal catalyst particles.