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Method of manufacturing semiconductor device

  • US 20100255672A1
  • Filed: 04/05/2010
  • Published: 10/07/2010
  • Est. Priority Date: 04/06/2009
  • Status: Abandoned Application
First Claim
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1. A method of manufacturing a semiconductor device comprising:

  • forming a floating gate on a first surface region of a semiconductor substrate through a gate insulating film;

    forming a tunnel insulating film so as to cover a second surface region adjacent to said first surface region and an end portion of said floating gate;

    forming an oxide film so as to cover said tunnel insulating film and be thicker at a portion above said second surface region than at a portion above said floating gate;

    etching back said oxide film and a surface of said tunnel insulating film on said floating gate; and

    forming a control gate on said tunnel insulating film on said second surface region.

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