APPARATUS AND METHOD FOR POWER MANAGEMENT OF MEMORY CIRCUITS BY A SYSTEM OR COMPONENT THEREOF

• US 20100257304A1
• Filed: 06/16/2010
• Published: 10/07/2010
• Est. Priority Date: 07/31/2006
• Status: Active Grant

• Current Assignee: Google LLC (Alphabet Inc.)
• Original Assignee: Google Inc. (Alphabet Inc.)
• Inventors: Wang, David T., Smith, Michael John Sebastian, Rajan, Suresh Natarajan
• Granted Patent: US 8,122,207 B2
• Time in Patent Office: Days
• US Class Current: 711/6
• CPC Class Codes: G06F 30/20 Design optimisation, verification or simulation optimisation, verification or simulation of circuit designs G06F30/30
• CPC Class Codes: G11C 11/4074 Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
• CPC Class Codes: G11C 11/4093 Input/output [I/O] data interface arrangements, e.g. data buffers
• CPC Class Codes: G11C 5/14 Power supply arrangements , e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

Abstract

An apparatus and method are provided for communicating with a plurality of physical memory circuits. In use, at least one virtual memory circuit is simulated where at least one aspect (e.g. power-related aspect, etc.) of such virtual memory circuit(s) is different from at least one aspect of at least one of the physical memory circuits. Further, in various embodiments, such simulation may be carried out by a system (or component thereof), an interface circuit, etc.

Claims

1. An apparatus for simulating at least one virtual memory circuit, the apparatus comprising:

a plurality of physical memory circuits; and

an interface circuit configured to;

communicate with the plurality of physical memory circuits;

communicate with a memory controller via a bus; and

simulate at least one virtual memory circuit for the memory controller, wherein a precharge-to-active ratio of the simulated virtual memory circuit is different from a precharge-to-active ratio of at least one physical memory circuit of the plurality of physical memory circuits, and wherein a change in a timing of the bus changes the precharge-to-active ratio of the simulated virtual memory circuit.

2. The apparatus of claim 1, wherein the bus is an address and control bus.

3. The apparatus of claim 2, wherein the change in the timing of the bus is a change from a first address timing to a second address timing.

4. The apparatus of claim 3, wherein the first address timing is a 1T address timing and the second address timing is a 2T address timing.

5. The apparatus of claim 4, wherein commands or signals on the bus are valid for one clock cycle when the 1T address timing is used.

6. The apparatus of claim 4, wherein commands or signals on the bus are valid for two clock cycles when the 2T address timing is used.

7. The apparatus of claim 1, wherein the interface circuit includes at least one of a buffer, a register, or an advanced memory buffer (AMB), positioned on at least one dual in-line memory module (DIMM).

8. The apparatus of claim 1, wherein the interface circuit includes at least one of a buffer chip, a data register chip, a multiplexer/de-multiplexer chip, a synchronous multiplexer/de-multiplexer chip, a register chip, a data register chip, and an address/control register chip.

9. The apparatus of claim 1, wherein the interface circuit changes power-related aspects of the simulated virtual memory circuit based on power management signals received from the memory controller.

10. The apparatus of claim 9, wherein the memory controller places power management signals in at least one of an address field, a data field, at least one unused pin on a dual in-line memory module (DIMM), a clock enable signal, and a chip select signal.

11. The apparatus of claim 1, wherein the plurality of physical memory circuits is a plurality of dynamic random access memory (DRAM) circuits in a dual in-line memory module (DIMM).

12. A method for simulating at least one virtual memory circuit, the method comprising:

interfacing a plurality of physical memory circuits and a memory controller using an interface circuit, wherein the interface circuit is configured to communicate with the memory controller via a bus; and

simulating at least one virtual memory circuit for the memory controller, wherein a precharge-to-active ratio of the simulated virtual memory circuit is different from a precharge-to-active ratio of at least one physical memory circuit of the plurality of physical memory circuits, and wherein a change in a timing of the bus changes the precharge-to-active ratio of the simulated virtual memory circuit.

13. The method of claim 12, wherein the bus is an address and control bus.

14. The method of claim 13, wherein the change in the timing of the bus is a change from a first address timing to a second address timing.

15. The method of claim 14, wherein the first address timing is a 1T address timing and the second address timing is a 2T address timing.

16. The method of claim 15, wherein commands or signals on the bus are valid for one clock cycle when the 1T address timing is used.

17. The method of claim 15, wherein commands or signals on the bus are valid for two clock cycles when the 2T address timing is used.

18. The method of claim 12, wherein the interface circuit includes at least one of a buffer, a register, an advanced memory buffer (AMB), and a component positioned on at least one dual in-line memory module (DIMM).

19. The method of claim 12, wherein the interface circuit includes at least one of a buffer chip, a data register chip, a multiplexer/de-multiplexer chip, a synchronous multiplexer/de-multiplexer chip, a register chip, a data register chip, and an address/control register chip.

20. The method of claim 12, wherein the interface circuit changes power-related aspects of the simulated virtual memory circuit based on power management signals received from the memory controller.

21. The method of claim 20, wherein the memory controller places power management signals in at least one of an address field, a data field, at least one unused pin on a dual in-line memory module (DIMM), a clock enable signal, and a chip select signal.

22. The method of claim 12, wherein the plurality of physical memory circuits is a plurality of dynamic random access memory (DRAM) circuits in a dual in-line memory module (DIMM).