STORAGE DEVICE AND METHOD FOR EXTENDING LIFETIME OF STORAGE DEVICE

• US 20100257430A1
• Filed: 11/12/2009
• Published: 10/07/2010
• Est. Priority Date: 04/01/2009
• Status: Abandoned Application

• Current Assignee: Jmicron Technology Corp.
• Original Assignee: Jmicron Technology Corp.
• Inventors: Chen, Ming-Cheng
• Application Number:
  US12/617,675
• Publication Number:
  US 20100257430A1
• Time in Patent Office: Days
• US Class Current: 714/773
• CPC Class Codes: G06F 11/1068 in sector programmable memories, e.g. flash disk G06F11/1072 takes precedence

Abstract

The present invention provides a storage device and a method for extending lifetime of storage devices. The storage device comprises: at least a non-volatile memory unit, at least an error correction code (ECC) engine, and a control unit. The non-volatile memory unit comprises a plurality of blocks, and the blocks comprise a plurality of pages, respectively. The ECC engine is coupled to the non-volatile memory unit, and for detecting and correcting errors for the non-volatile memory unit. The control unit is coupled to the non-volatile memory unit and the ECC engine, and for selectively label a specific block in the non-volatile memory unit as an abnormal block according to an error detecting result of the ECC engine.

Claims

1. A storage device, comprising:

at least a non-volatile memory unit, the non-volatile memory unit comprising a plurality of blocks, and the blocks comprising a plurality of pages, respectively;

at least an error correction code (ECC) engine, coupled to the non-volatile memory unit, for detecting and correcting errors for the non-volatile memory unit; and

a control unit, coupled to the non-volatile memory unit and the ECC engine, for selectively labeling a specific block in the non-volatile memory unit as an abnormal block according to an error detecting result of the ECC engine.

2. The storage device of claim 1, wherein when a page of the specific block in the non-volatile memory unit has page program fail, the ECC engine checks an error bit number of the page to generate the error detecting result, and the control unit compares the error bit number of the page with a predetermined threshold value, and when the error bit number of the page is greater than the predetermined threshold value, the control unit labels the specific block as an abnormal block, and when the error bit number of the page is not greater than the predetermined threshold value, the control unit does not label the specific block as an abnormal block.

3. The storage device of claim 2, wherein the predetermined threshold value is greater than 0 and smaller than a largest bit number that the ECC engine can correct.

4. The storage device of claim 1, wherein when the specific block in the non-volatile memory unit has block erase fail, the ECC engine checks error bit numbers of a plurality of pages in the specific block one by one to generate the error detecting result, and the control unit compares the error bit number of each checked page in the specific block with a predetermined threshold value, and when the error bit number of at least a page in the specific block is greater than the predetermined threshold value, the control unit labels the specific block as an abnormal block, and when the error bit numbers of all the page in the specific block are not greater than the predetermined threshold value, the control unit does not label the specific block as an abnormal block.

5. The storage device of claim 4, wherein the predetermined threshold value is greater than 0 and smaller than a largest bit number that the ECC engine can correct.

6. The storage device of claim 1, wherein the non-volatile memory unit is a NAND type flash memory.

7. The storage device of claim 1, wherein the control unit is a CPU.

8. The storage device of claim 1, being a solid state drive (SSD), wherein the SSD comprises a plurality of non-volatile memory units and a plurality of ECC engines;

the plurality of ECC engines are respectively coupled to the plurality of non-volatile memory units, for respectively detecting and correcting errors for the plurality of non-volatile memory units; and

the control unit selectively labels a specific block in a corresponding non-volatile memory unit as an abnormal block according to an error detecting result of each ECC engine.

17. The method storage device of claim 4, wherein the storage device is a solid state drive (SSD), and the SSD comprises a plurality of non-volatile memory units and a plurality of ECC engines;

the plurality of ECC engines are respectively coupled to the plurality of non-volatile memory units, for respectively detecting and correcting errors for the plurality of non-volatile memory units; and

the control unit selectively labels a specific block in a corresponding non-volatile memory unit as an abnormal block according to an error detecting result of each ECC engine.

9. A method for extending lifetime of a storage device, the storage device comprising at least a non-volatile memory unit and at least an ECC engine, the non-volatile memory unit comprising a plurality of blocks, and the blocks respectively comprising a plurality of pages, the method comprising:

utilizing the ECC engine to detect and correct errors for the non-volatile memory unit; and

selectively labeling a specific block in the non-volatile memory unit as an abnormal block according to an error detecting result of the ECC engine.

10. The method of claim 9, wherein when a page of the specific block in the non-volatile memory unit has page program fail, the step of utilizing the ECC engine to detect and correct errors for the non-volatile memory unit comprises:

utilizing the ECC engine to check an error bit number of the page to generate the error detecting result.

11. The method of claim 10, wherein the step of selectively labeling a specific block in the non-volatile memory unit as an abnormal block according to the error detecting result of the ECC engine comprises:

comparing the error bit number of the page with a predetermined threshold value;

when the error bit number of the page is greater than the predetermined threshold value, labeling the specific block as an abnormal block; and

when the error bit number of the page is not greater than the predetermined threshold value, not labeling the specific block as an abnormal block.

12. The method of claim 11, wherein the predetermined threshold value is greater than 0 and smaller than a largest bit number that the ECC engine can correct.

13. The method of claim 9, wherein when the specific block in the non-volatile memory unit has block erase fail, the step of utilizing the ECC engine to detect and correct errors for the non-volatile memory unit comprises:

utilizing the ECC engine to check error bit numbers of a plurality of pages in the specific block one by one to generate the error detecting result.

14. The method of claim 13, wherein the step of selectively labeling a specific block in the non-volatile memory unit as an abnormal block according to the error detecting result of the ECC engine comprises:

comparing the error bit number of each checked page in the specific block with a predetermined threshold value;

when the error bit number of at least a page in the specific block is greater than the predetermined threshold value, labeling the specific block as an abnormal block; and

when the error bit numbers of all the page in the specific block are not greater than the predetermined threshold value, not labeling the specific block as an abnormal block.

15. The method of claim 14, wherein the predetermined threshold value is greater than 0 and smaller than a largest bit number that the ECC engine can correct.

16. The method of claim 9, wherein the non-volatile memory unit is a NAND type flash memory.