BONDED HERMETIC FEED THROUGH FOR AN ACTIVE IMPLANTABLE MEDICAL DEVICE

• US 20100258342A1
• Filed: 08/28/2009
• Published: 10/14/2010
• Est. Priority Date: 04/08/2009
• Status: Abandoned Application

• Current Assignee: National ICT Australia Limited
• Original Assignee: National ICT Australia Limited
• Inventors: Parker, John L.
• Application Number:
  US12/549,875
• Publication Number:
  US 20100258342A1
• Time in Patent Office: Days
• US Class Current: 174/266
• CPC Class Codes: A61N 1/3754 Feedthroughs
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 23/10 characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/15184 in different layers of the multilayer substrate
• CPC Class Codes: H05K 1/115 Via connections; Lands around holes or via connections H05K1/112 takes precedence
• CPC Class Codes: H05K 2201/09509 Blind vias, i.e. vias having one side closed
• CPC Class Codes: H05K 2201/09627 Special connections between adjacent vias, not for grounding vias
• CPC Class Codes: H05K 3/4611 by laminating two or more circuit boards H05K3/4652 takes precedence
• CPC Class Codes: Y10T 29/49165 by forming conductive walled aperture in base

Abstract

A feed through for an active implantable medical device (AIMD). The feed through comprises first and second substantially planar, electrically non-conductive and fluid impermeable substrates usable for semiconductor device fabrication, each comprising: an aperture there through, and a contiguous metalized layer on the substrate surface that is co-existent with a section of the perimeter of the aperture and extends from the aperture; and a bond layer affixing the metalized layers of the first and second substrates to one another such that the apertures are not aligned with one another, and such that the metalized regions form a conductive pathway between the apertures.

Claims

1. A method for manufacturing a feed through for an implantable medical device, comprising:

forming an aperture through each of first and second substantially planar, electrically non-conductive and fluid impermeable substrates usable for semiconductor fabrication;

metalizing a region of a surface of the first substrate to form a contiguous metalized layer that is co-existent with a section of the perimeter of the aperture and extends from the aperture;

metalizing a region of a surface of the second substrate to form a contiguous metalized layer that is co-existent with a section of the perimeter of the aperture and extends from the aperture;

bonding the metalized layers to one another such that the apertures are not aligned with one another, and such that the metalized layers form a conductive pathway between the apertures.

2. The method of claim 1, further comprising:

forming a plurality of apertures in the first and second substrates.

3. The method of claim 2, further comprising:

metalizing a region of a surface of the first substrate to form a plurality of physically separate metalized layers each co-existent with a section of the perimeter of one of the plurality of apertures and each extending from the one aperture; and

metalizing a region of a surface of the second substrate to form a plurality of physically separate metalized layers each co-existent with a section of the perimeter of one of the plurality of apertures and each extending from the one aperture.

4. The method of claim 3, further comprising:

bonding each of the metalized layers of the first substrate to a separate metalized layer of the second substrate such that no aperture openings are aligned with one another, and such that each of the bonded metalized layers form a conductive pathway between apertures.

5. The method of claim 1, further comprising:

forming through vias in each of the first and second apertures.

6. The method of claim 5, wherein forming the vias in each of the first and second apertures comprises:

coating the aperture cavity with a conductive material;

filling the coated cavity with a bulk conductive material; and

disposing a conductive material over the filled aperture.

7. The method of claim 1, further comprising:

providing a conductive trench in the first substrate prior to forming the aperture therein.

8. The method of claim 1, wherein bonding the metalized layers to one another comprises:

forming a metal layer bond.

9. The method of claim 1, further comprising:

preparing the first and second substrates for bonding prior to metalizing the substrate surfaces.

10. A feed through for an implantable medical device, comprising:

first and second substantially planar, electrically non-conductive and fluid impermeable substrates usable for semiconductor device fabrication, each comprising;

an aperture there through, and

a contiguous metalized layer on the substrate surface that is co-existent with a section of the perimeter of the aperture and extends from the aperture; and

a bond layer affixing the metalized layers of the first and second substrates to one another such that the apertures are not aligned with one another, and such that the metalized regions form a conductive pathway between the apertures.

11. The feed through of claim 10, wherein each of the first and second substrates comprise a plurality of apertures there through.

12. The feed through of claim 11, wherein each of the substrates further comprise:

a plurality of physically separate metalized layers on the surfaces of the substrate each co-existent with a section of the perimeter of one of the plurality of apertures and each extending from the one aperture.

13. The feed through of claim 12, further comprising:

a plurality of bond layers affixing each of the metalized layers of the first substrate to a separate metalized layer of the second substrate such that no apertures are aligned with one another, and such that each of the bonded metalized layers form a conductive pathway between apertures.

14. The feed through of claim 10, further comprising:

vias formed in each of the first and second apertures.

15. The feed through of claim 10, wherein the first substrate comprises:

a conductive trench formed therein.

16. The feed through of claim 10, wherein the bonded layer comprises a metal layer bond.

17. A method for manufacturing a feed through for an implantable medical device, comprising:

forming an aperture through each of first and second substantially planar, electrically non-conductive and fluid impermeable substrates usable for semiconductor device fabrication;

metalizing a region of a surface of the first substrate to form a contiguous metalized layer that is co-existent with a section of the perimeter of the aperture and extends from the aperture;

metalizing a region of a surface of the second substrate to form a contiguous metalized layer that is co-existent with a section of the perimeter of the aperture and extends from the aperture; and

bonding the metalized layers to opposing surfaces of a third substantially planar, electrically non-conductive and fluid impermeable substrate usable for semiconductor device fabrication, having at least one conductive region disposed there through that forms a conductive pathway between the metalized layers.

18. The method of claim 17, further comprising:

bonding each of the metalized layers to the third substrate such that the apertures in the first and second substrates are substantially aligned with one another.

19. The method of claim 17, further comprising:

bonding each of the metalized layers to the third substrate such that the apertures in the first and second substrates are not aligned with one another.

20. The method of claim 17, further comprising:

providing a third substrate that comprises an anisotropic conductor.

21. The method of claim 17, further comprising:

providing a third substrate that comprises a wafer of silicon.

22. The method of claim 21, further comprising:

diffusing a metallic element in the silicon wafer to form a low resistance path through the wafer.

23. The method of claim 17, further comprising:

forming through vias in each of the first and second apertures.

24. The method of claim 17, further comprising:

providing a conductive trench in the first substrate prior to forming the aperture therein.

25. A feed through for an implantable medical device, comprising:

first and second substantially planar, electrically non-conductive and fluid impermeable substrates usable for semiconductor device fabrication, each comprising;

an aperture there through, and

a contiguous metalized layer on the substrate surface that is co-existent with a section of the perimeter of the aperture and extends from the aperture; and

a third substantially planar, electrically non-conductive and fluid impermeable substrate usable for semiconductor device fabrication, having at least one conductive region extending there through; and

first and second bond layers affixing the metalized layers of the first and second substrates to opposing surfaces of a third substrate such that the conductive region provides a conductive pathway between the metalized layers.

26. The feed through of claim 25, wherein the apertures in the first and second substrates are substantially aligned with one another.

27. The feed through of claim 25, wherein the apertures in the first and second substrates are not aligned with one another.

28. The feed through of claim 25, wherein the third substrate comprises an anisotropic conductor.

29. The feed through of claim 25, wherein the third substrate comprises a wafer of silicon.

30. The feed through of claim 29, wherein the wafer of silicon comprises a diffused metallic region extending there through to form a low resistance path through the wafer.

31. The feed through of claim 25, further comprising:

vias formed in each of the first and second apertures.

32. The feed through of claim 25, wherein the first substrate comprises:

a conductive a trench formed therein.