Diamond Type Quad-Resistor Cells of PRAM
First Claim
1. A phase-change random access memory (PRAM) cell, comprising:
- a heater resistor; and
a phase change material (PCM) formed over and coupled to the heater resistor;
wherein the phase change material (PCM) contacts a portion of a vertical surface of the heater resistor and a portion of a horizontal surface of the heater resistor to form an active region between the heater resistor and the phase change material (PCM).
1 Assignment
0 Petitions
Accused Products
Abstract
A method of forming a phase-change random access memory (PRAM) cell, and a structure of a phase-change random access memory (PRAM) cell are disclosed. The PRAM cell includes a bottom electrode, a heater resistor coupled to the bottom electrode, a phase change material (PCM) formed over and coupled to the heater resistor, and a top electrode coupled to the phase change material. The phase change material contacts a portion of a vertical surface of the heater resistor and a portion of a horizontal surface of the heater resistor to form an active region between the heater resistor and the phase change material.
-
Citations
81 Claims
-
1. A phase-change random access memory (PRAM) cell, comprising:
-
a heater resistor; and a phase change material (PCM) formed over and coupled to the heater resistor; wherein the phase change material (PCM) contacts a portion of a vertical surface of the heater resistor and a portion of a horizontal surface of the heater resistor to form an active region between the heater resistor and the phase change material (PCM). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A phase-change random access memory (PRAM) arrangement, comprising:
a plurality of phase-change random access memory (PRAM) cells, wherein each of the PRAM cells includes; a heater resistor; and a phase change material (PCM) formed over and coupled to the heater resistor; wherein the phase change material (PCM) contacts a portion of a vertical surface of the heater resistor and a portion of a horizontal surface of the heater resistor to form an active region between the heater resistor and the phase change material (PCM). - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
-
31. A method of forming a phase-change random access memory (PRAM) cell, the method comprising:
-
forming a heater resistor; and forming a phase change material (PCM) over an active region of the heater resistor, wherein the active region of the heater resistor includes a portion of a vertical surface of the heater resistor and a portion of a horizontal surface of the heater resistor. - View Dependent Claims (32, 33, 34, 35)
-
-
36. A method of forming a phase-change random access memory (PRAM) cell arrangement, the method comprising:
-
forming a plurality of heater resistors; and forming a common phase change material (PCM) film over the plurality of heater resistors. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43, 44, 45, 47, 48)
-
-
46. A method of forming a phase-change random access memory (PRAM) cell arrangement, the method comprising:
-
forming a common heater resistor; and forming a plurality of phase change material (PCM) films over the common heater resistor. - View Dependent Claims (49, 50, 51)
-
-
52. A method of forming a three-dimensional phase-change random access memory (PRAM) cell arrangement, the method comprising:
-
forming a common heater resistor, wherein the heater resistor includes a plurality of first leg portions extending in a first plane and at least one second leg portion extending in a second plane; and forming a phase change material (PCM) film over an end of each of the plurality of first leg portions and the at least one second leg portion of the heater resistor to form active regions. - View Dependent Claims (53, 54)
-
-
55. A phase-change random access memory (PRAM) arrangement comprising:
-
a common heater resistor having a plurality of first leg portions extending in a first plane and at least one second leg portion extending in a second plane; and a phase change material (PCM) film over an end of each of the plurality of first leg portions and the at least one second leg portion of the heater resistor, wherein the interface between the phase change material (PCM) film and the end of each of the plurality of first leg portions and the at least one second leg portion of the heater resistor forms active regions. - View Dependent Claims (56, 57, 58)
-
-
59. A phase-change random access memory (PRAM) arrangement, comprising:
a plurality of phase-change random access memory (PRAM) cells, wherein each of the PRAM cells includes; a heater resistor; and a phase change material (PCM) formed over and coupled to the heater resistor, wherein the phase change material (PCM) is common to each of the plurality of phase-change random access memory (PRAM) cells, and wherein the common phase change material (PCM) has a central portion and a plurality of portions extending from the central portion to the plurality of PRAM cells. - View Dependent Claims (60, 61, 62, 63, 64, 65)
-
66. A phase-change random access memory (PRAM) arrangement, comprising:
a plurality of phase-change random access memory (PRAM) cells, wherein each of the PRAM cells includes; a heater resistor; and a phase change material (PCM) formed over and coupled to the heater resistor, wherein the heater resistor is common to each of the plurality of phase-change random access memory (PRAM) cells, and wherein the common heater resistor has a central portion and a plurality of portions extending from the central portion to the plurality of PRAM cells. - View Dependent Claims (67, 68, 69, 70, 71)
-
72. A phase-change random access memory (PRAM) cell, comprising:
-
a resistive means for generating heat; and a phase change means for allowing phase change coupled to the resistive means; wherein an active region between the resistive means and the phase change means is defined by a first physical dimension and a second physical dimension of the resistive means. - View Dependent Claims (73, 74, 75, 76)
-
-
77. A method of forming a phase-change random access memory (PRAM) cell, the method comprising:
-
step for forming a heater resistor; and step for forming a phase change material (PCM) over an active region of the heater resistor, wherein the active region of the heater resistor includes a portion of a vertical surface of the heater resistor and a portion of a horizontal surface of the heater resistor. - View Dependent Claims (78, 79, 80, 81)
-
Specification