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Diamond Type Quad-Resistor Cells of PRAM

  • US 20100258777A1
  • Filed: 04/09/2009
  • Published: 10/14/2010
  • Est. Priority Date: 04/09/2009
  • Status: Active Grant
First Claim
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1. A phase-change random access memory (PRAM) cell, comprising:

  • a heater resistor; and

    a phase change material (PCM) formed over and coupled to the heater resistor;

    wherein the phase change material (PCM) contacts a portion of a vertical surface of the heater resistor and a portion of a horizontal surface of the heater resistor to form an active region between the heater resistor and the phase change material (PCM).

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