Solution composition for forming oxide thin film and electronic device including the oxide thin film

• US 20100258793A1
• Filed: 04/09/2010
• Published: 10/14/2010
• Est. Priority Date: 04/09/2009
• Status: Active Grant

• Current Assignee: Industry Academic Cooperation Foundation, Samsung Electronics Co. Ltd.
• Original Assignee: Industry Academic Cooperation Foundation, Samsung Electronics Co. Ltd.
• Inventors: Ahn, Byung-Du, Kim, Gun-Hee, Kim, Hyun-Jae, Lee, Sang-Yoon, Ryu, Myung-Kwan, Jeong, Woong-Hee, Park, Kyung-Bae, Seon, Jong-Baek, Shin, Hyun-Soo
• Granted Patent: US 8,319,300 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.

Claims

1. A solution composition for forming an oxide thin film, comprising:

a first compound including zinc;

a second compound including indium; and

a third compound including magnesium.

2. The solution composition of claim 1, wherein the zinc and magnesium is included at an atomic ratio of about 1:

0.01 to about 1;

4.

3. The solution composition of claim 2, wherein the zinc and indium are included at an atomic ratio of about 1:

10 to about 10;

1.

4. The solution composition of claim 2, wherein the zinc and indium are included at an atomic ratio of about 1:

5 to about 5;

1.

5. The solution composition of claim 2, wherein the zinc and indium are included at an atomic ratio of about 1:

10 to about 1;

1.

6. The solution composition of claim 2, wherein the zinc and indium are included at an atomic ratio of about 1:

5 to about 1;

1.

7. The solution composition of claim 1, wherein the third compound includes at least one of magnesium acetate, magnesium alkoxide, magnesium halide, magnesium nitrate, magnesium sulfate, magnesium carbonylate, magnesium carbonate, and hydrates thereof.

8. The solution composition of claim 7, wherein the first compound includes at least one of zinc hydroxide, zinc alkoxide, zinc citrate, zinc acetate, zinc carbonylate, zinc carbonate, zinc (meth)acrylate, zinc nitrate, zinc acetylacetonate, zinc halide, zinc thiocarbamate, zinc sulfonate, zinc undecylate, zinc phosphate, zinc borate, and hydrates thereof, and

the second compound includes at least one of indium hydroxide, indium alkoxide, indium citrate, indium acetate, indium carbonate, indium (meth)acrylate, indium nitrate, indium acetylacetonate, indium halide, indium thiocarbamate, indium sulfonate, indium undecylate, indium borate, and hydrates thereof.

9. The solution composition of claim 8, wherein the first compound includes zinc acetate hydrate and the second compound includes indium nitrate hydrate.

10. The solution composition of claim 1, further comprising:

at least one of an alcohol amine compound, ketone compound, an acid compound, a base compound, and deionized water.

11. An electronic device comprising an oxide semiconductor including zinc, indium, and magnesium.

12. The electronic device of claim 11, wherein the oxide semiconductor includes the zinc and magnesium at an atomic ratio of about 1:

0.01 to about 1;

4.

13. The electronic device of claim 12, wherein the zinc and indium are included at an atomic ratio of about 1:

10 to about 10;

1.

14. The electronic device of claim 12, wherein the zinc and indium are included at an atomic ratio of about 1:

5 to about 5;

1.

15. The electronic device of claim 12, wherein the zinc and indium are included at an atomic ratio of about 1:

10 to about 1;

1.

16. The electronic device of claim 12, wherein the zinc and indium are included at an atomic ratio of about 1:

5 to about 1;

1.

17. The electronic device of claim 11, wherein the electronic device is a thin film transistor, further comprising:

a gate electrode overlapped with the oxide semiconductor;

a source electrode electrically connected to the oxide semiconductor; and

a drain electrode electrically connected to the oxide semiconductor and facing, the source electrode.

18. A solution composition for forming an oxide thin film, comprising:

a first compound including zinc;

a second compound including indium; and

a third compound including hafnium,

wherein the zinc and hafnium are included at an atomic ratio of about 1;

0.01 to about 1;

1.

19. The solution composition of claim 18, wherein the zinc and hafnium are included at an atomic ratio of about 1:

0.05 to about 1;

0.3.

20. The solution composition of claim 18, wherein the first compound includes zinc acetate hydrate, the second compound includes indium nitrate hydrate, and the third compound includes hafnium chloride.

21. The solution composition of claim 18, further comprising:

at least one of an alcohol amine compound, ketone compound, an acid compound, a base compound, and deionized water.