MOSFET STRUCTURE WITH GUARD RING

• US 20100258856A1
• Filed: 06/24/2010
• Published: 10/14/2010
• Est. Priority Date: 04/29/2008
• Status: Active Grant

• Current Assignee: Force Mos Technology Co., Ltd.
• Original Assignee: Force Mos Technology Co., Ltd.
• Inventors: HSIEH, Fu-Yuan
• Granted Patent: US 8,164,139 B2
• Time in Patent Office: Days
• US Class Current: 257/328
• CPC Class Codes: H01L 29/0615 by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] LDD or drain offset regions H01L29/7833
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/456 on silicon
• CPC Class Codes: H01L 29/66727 with a step of recessing the source electrode
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A trench Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) structure with guard ling, includes: a substrate including an epi layer region on the top thereof a plurality of source and body regions formed in the epi layer; a metal layer including a plurality of metal layer regions which are connected to respective source and body regions forming metal connections of the MOSFET; a plurality of metal contact plugs connected to respective metal layer regions; an insulating layer deposited on the epi layer formed underneath the metal layer with a plurality of metal contact holes therein for contacting respective source and body regions; and a guard ring wrapping around the trench gates with contact metal plug underneath the gate metal layer.

Claims

1. A trench MOSFET structure with a guard ring, comprising:

a substrate of a first conductivity doping type including an epitaxial layer of said first conductivity doping type formed on said substrate, said epitaxial layer having a doping concentration less than that of said substrate;

a plurality of source regions of said first conductivity doping type formed in said epitaxial layer, and a plurality of first type body regions of a second conductivity doping type formed beneath said sources in an active area;

an insulating layer formed on said epitaxial layer;

a plurality of first type trenches in said active area vertically penetrating through said insulating layer and said source regions, and extending into said body regions, said first type trenches having an gate oxide layer formed thereon, said first type trenches being filled with a doped polysilicon layer as trenched contact gates for current conduction;

a guard ring being formed in said trenched contact gate area and said termination area, said guard ring extending from a top surface of said epitaxial layer having said second conductivity doping type, said guard ring having a junction depth deeper than that of said body region, and said guard ring wrapping around a sidewall and a bottom of said trenched contact gate;

at least one second type trench having said gate oxide layer formed thereon, said second type trench being deeper and wider than said first type trench, said second type trench extending from a surface of said body regions into said guard ring region, said second type trench being filled with said doped polysilicon as a trenched contact gate between said active area and a termination area;

said guard ring having doping concentration gradually decreasing from a sidewall of said second type trenched contact gate toward a center of said bottom of said second type trenched contact gate;

a drift region of said first conductivity doping being formed between said substrate and said guard ring, and formed underneath said second type trenched contact gate, a height of said drift region under said center of said bottom of said second type trenched contact gate being greater than those heights of said drift region under said sidewall of said second type trenched contact gate, the height of said drift region being defined by a distance from said substrate to said guard ring;

a second type body region with said second conductivity doping type formed between said active area and said trenched contact gate; and

a third type body region with said second conductivity doping type formed in said termination area.

2. The trench MOSFET structure in claim 1, further comprising a first metal contact plug penetrating through said insulating layer and extending into said doped polysilicon filled in said second type trenched contact gates, a first metal contact plug being connected to said first metal layer formed on said insulating layer, said first metal contact plug serving as a gate metal;

and a plurality of second metal contact plugs penetrating through said insulating layer and said source regions, and extending into said body regions, said second metal contact plugs being connected to a second metal layer formed on said insulating layer, said second metal layer serving as a source metal.

3. The trench MOSFET structure in claim 2, wherein said gate metal formed above said third type body region and guard ring and overlapping top surface of said expitaxial layer in said termination area servicing as a metal field plate for breakdown voltage enhancement.

4. The trench MOSFET structure in claim 1, further comprising a plurality of third metal contact plugs penetrating through said insulating layer and extending into said third type body region, said third metal contact plugs being connected to a third metal layer formed on said insulating layer, said third metal layer overlapping said third type body region, said guard ring region and said epitaxial layer serving as a metal field plate for breakdown voltage enhancement.

5. The trench MOSFET structure in claim 1, further comprising a plurality of heavily-doped regions of said second conductivity doping type disposed at the bottoms of said second metal contact plugs.

6. The trench MOSFET structure in claim 4, further comprising a plurality of heavily-doped regions of said second conductivity doping type disposed at the bottoms of said third metal contact plugs.

7. The trench MOSFET structure in claim 1, wherein said guard ring wraps around a part of said second type body region between said active and said trenched contact gate and said third type body region in termination area.

8. The trench MOSFET structure in claim 1, wherein said gate oxide layer in trench gates is single oxide of which oxide thickness nearly uniform along the trench sidewall and bottom.

9. The trench MOSFET structure in claim 1, wherein said gate oxide layer at the bottoms of trench gates has a significant larger thickness than the trench sidewall so as to reduce the capacitance of the gate oxide layer.

10. The trench MOSFET structure in claim 1, wherein said guard ring having doping concentration near said trenched contact gate bottom gradually decreases from sidewall of said trenched contact gate toward center of said trenched contact gate bottom.