TRANSISTOR HAVING RECESS CHANNEL AND FABRICATING METHOD THEREOF
First Claim
Patent Images
1. A transistor, comprising:
- a substrate including a trench;
an insulation layer filled in a portion of the trench, the insulation layer having a greater thickness over an edge portion of a bottom surface of the trench than over a middle portion of the bottom surface of the trench;
a gate insulation layer formed over inner sidewalls of the trench, the gate insulation layer having a thickness smaller than the insulation layer; and
a gate electrode filled in the trench.
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Accused Products
Abstract
A transistor includes a substrate including a trench, an insulation layer filled in a portion of the trench, the insulation layer having a greater thickness over an edge portion of a bottom surface of the trench than over a middle portion of the bottom surface of the trench, a gate insulation layer formed over inner sidewalls of the trench, the gate insulation layer having a thickness smaller than the insulation layer, and a gate electrode filled in the trench.
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Citations
12 Claims
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1. A transistor, comprising:
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a substrate including a trench; an insulation layer filled in a portion of the trench, the insulation layer having a greater thickness over an edge portion of a bottom surface of the trench than over a middle portion of the bottom surface of the trench; a gate insulation layer formed over inner sidewalls of the trench, the gate insulation layer having a thickness smaller than the insulation layer; and a gate electrode filled in the trench. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A transistor, comprising:
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a substrate including a trench; an insulation layer filled in a portion of the trench, the insulation layer having a V shape; a gate insulation layer formed over inner sidewalls of the trench, the gate insulation layer having a thickness smaller than the insulation layer; and a gate electrode filled in the trench. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification