SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS

• US 20100258893A1
• Filed: 04/06/2010
• Published: 10/14/2010
• Est. Priority Date: 04/13/2009
• Status: Abandoned Application

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Sawada, Ken
• Application Number:
  US12/754,910
• Publication Number:
  US 20100258893A1
• Time in Patent Office: Days
• US Class Current: 257/440
• CPC Class Codes: H01L 27/1461 characterised by the photosensitive area
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H01L 27/14656 Overflow drain structures
• CPC Class Codes: H01L 27/14689 MOS based technologies

Abstract

A method of manufacturing a solid-state imaging device includes: a first step of forming a recess portion on a top surface of a semiconductor substrate; a second step of selectively forming an impurity region of a first conductivity type in a lower portion of the recess portion by introducing impurities from a bottom surface of the recess portion; and a third step of forming a semiconductor layer in the recess portion, thus forming a photoelectric conversion portion which includes the impurity region and the semiconductor layer.

Claims

1. A method of manufacturing a solid-state imaging device comprising:

a first step of forming a recess portion on a top surface of a semiconductor substrate;

a second step of selectively forming an impurity region of a first conductivity type in a lower portion of the recess portion by introducing impurities from a bottom surface of the recess portion; and

a third step of forming a semiconductor layer in the recess portion, thus forming a photoelectric conversion portion which includes the impurity region and the semiconductor layer.

2. The method according to claim 1, wherein in the third step, the semiconductor layer is formed in a state where impurities of the first conductivity type are contained in at least a portion of the semiconductor layer being in contact with the impurity region.

3. The method according to claim 1, further comprising, after the third step, a step of introducing impurities of the first conductivity type into at least a portion of the semiconductor layer being in contact with the impurity region.

4. The method according to claim 1, wherein in the third step, the semiconductor layer is formed to the height of the top surface of the semiconductor substrate.

5. The method according to claim 1, wherein a top surface layer of the semiconductor layer has a second conductivity type.

6. The method according to claim 1, wherein in the third step, as the semiconductor layer, crystalline silicon or crystalline silicon-germanium is formed in the recess portion of the semiconductor substrate made from single-crystalline silicon.

7. A solid-state imaging device comprising:

a semiconductor substrate having a recess portion formed on a top surface thereof;

an impurity region of a first conductivity type formed in a portion of the semiconductor substrate disposed lower than a bottom surface of the recess portion; and

a semiconductor layer of the first conductivity type formed in the recess portion,

wherein the impurity region and the semiconductor layer form a photoelectric conversion portion.

8. The solid-state imaging device according to claim 7, wherein a top surface of the semiconductor layer is at the same height as the top surface of the semiconductor substrate.

9. The solid-state imaging device according to claim 7, wherein a top surface layer of the semiconductor layer has a second conductivity type.

10. The solid-state imaging device according to claim 7, wherein:

the semiconductor substrate is made from a single-crystalline silicon; and

the semiconductor layer is made from crystalline silicon or crystalline silicon-germanium.

11. The solid-state imaging device according to claim 7, wherein a photoelectric conversion portion that is formed by only an impurity region of the first conductivity type is formed on a top surface side of the semiconductor substrate together with the photoelectric conversion portion.

12. The solid-state imaging device according to claim 11, the photoelectric conversion portion that is formed of the impurity region and the semiconductor layer is provided as a photoelectric conversion portion for sensing longer-wavelength light than the photoelectric conversion portion that is formed by only the impurity region.

13. The solid-state imaging device according to claim 7, wherein a plurality of photoelectric conversion portions are provided in which the recess portion has a different depth.

14. The solid-state imaging device according to claim 13, wherein the recess portion in the photoelectric conversion portion for sensing longer-wavelength light has a greater depth than that in the other photoelectric conversion portions for sensing shorter-wavelength light.

15. An electronic apparatus including a solid-state imaging device, the solid-state imaging device comprising:

a semiconductor substrate having a recess portion formed on a top surface thereof;

an impurity region of a first conductivity type formed in a portion of the semiconductor substrate disposed lower than a bottom surface of the recess portion; and

a semiconductor layer of a first conductivity type formed in the recess portion,

wherein the impurity region and the semiconductor layer form a photoelectric conversion portion.