Systems and Methods for Providing Power to a Device Under Test

• US 20100259107A1
• Filed: 11/14/2008
• Published: 10/14/2010
• Est. Priority Date: 11/14/2007
• Status: Abandoned Application

• Current Assignee: Trustees Of Columbia University In The City Of New York (Columbia University), International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Kinget, Peter, Plouchart, Jean-Olivier
• Application Number:
  US12/679,204
• Publication Number:
  US 20100259107A1
• Time in Patent Office: Days
• US Class Current: 307/104
• CPC Class Codes: G01R 31/3025 Wireless interface with the DUT
• CPC Class Codes: G01R 31/315 by inductive methods

Abstract

Systems and methods for providing power to a device under test are prcn ided. In some embodiments, systems for providing power to a device under test are provided, the systems comprising a power source for providing an alternating current, a probe having a probe inductor coupled to the power source; and a device under test having a device inductor magnetically coupled to the probe inductor, and having a circuit to be tested that receives power produced in the device inductor, In some embodiments, devices that receive power from a probe having an inductor that is coupled to an alternating current power source are provided, the devices comprising: a device inductor magnetically coupled to the probe inductor; and a circuit to be tested that receives power produced in the device inductor.

Claims

1. A system for providing power to a device under test, comprising:

a power source for providing an alternating current;

a probe having a probe inductor coupled to the power source; and

a device under test having a device inductor magnetically coupled to the probe inductor, and having a circuit to be tested that receives power produced in the device inductor.

2. The system of claim 1, wherein the device under test also has a rectifier having an input coupled to the device inductor, has a voltage reference, and has a regulator having inputs coupled to an output of the rectifier and the voltage reference and having an output coupled to the circuit to be tested.

3. The system of claim 1, wherein the alternating current has a frequency of 1-100 GHz.

4. The system of claim 1, wherein the probe has a glass substrate.

5. The system of claim 1, wherein the probe has a soft and/or flexible substrate.

6. The system of claim 1, wherein the probe inductor is a spiral inductor.

7. The system of claim 1, wherein the probe inductor is about 150 μ

m in diameter.

8. The system of claim 1, wherein the probe inductor has a diameter between 10 μ

m and 1000 μ

m.

9. The system of claim 1, wherein the device under test is a wafer for an electronic component.

10. The system of claim 9, wherein the wafer is a silicon wafer.

11. The system of claim 1, wherein the device inductor is a spiral inductor.

12. The system of claim 1, wherein the device inductor is about 150 μ

m in diameter.

13. The system of claim 1, wherein the probe is physically separated from the device under test.

14. The system of claim 1, wherein the probe is physically contacting the device under test.

15. The system of claim 1, wherein the probe is flexible.

16. A device that receives power from a probe having an inductor that is coupled to an alternating current power source, comprising:

a device inductor magnetically coupled to the probe inductor; and

a circuit to be tested that receives power produced in the device inductor.

17. The device of claim 16, wherein the device further comprises:

a rectifier having an input coupled to the device inductor;

a voltage reference; and

a regulator having inputs coupled to an output of the rectifier and the voltage reference and having an output coupled to the circuit to be tested.

18. The device of claim 16, wherein the alternating current power source has a frequency of 1-100 GHz.

19. The device of claim 16, wherein the device is a wafer for an electronic component.

20. The device of claim 19, wherein the wafer is a silicon wafer.

21. The device of claim 16, wherein the device inductor is a spiral inductor.

22. The device of claim 16, wherein trite device inductor is about 150 μ

m in diameter.

23. A method for providing power to a device under test, comprising:

providing an alternating current;

coupling a probe inductor to the alternating current;

magnetically coupling a device inductor to the probe inductor to produce power; and

providing the produced power to a circuit under test.

24. The method of claim 23, further comprising:

rectifying an output of the device inductor to produce a rectified output;

producing a reference voltage; and

regulating the rectified output to produce as regulated output with respect to the reference voltage,

wherein the produced power is provided to the circuit under test as the regulated output.

25. The method of claim 23 ,wherein the alternating current has a frequency of 1-100 GHz.

26. The method of claim 23, wherein the probe inductor is a spiral inductor.

27. The method of claim 23, wherein the probe inductor is about 150 μ

m in diameter.

28. The method of claim 23, wherein the probe inductor has a diameter between 10 μ

m and 1000 μ

m.

29. The method of claim 23, wherein the device under test is a wafer for an electronic component.

30. The method of claim 29, wherein the wafer is a silicon wafer.

31. The method of claim 23, wherein the device inductor is a spiral inductor.

32. The method of claim 23, wherein the device inductor is about 150 μ

m in diameter.