SEMICONDUCTOR DEVICE

• US 20100259201A1
• Filed: 04/07/2010
• Published: 10/14/2010
• Est. Priority Date: 04/09/2009
• Status: Abandoned Application

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Kawano, Kohei, KAWANO, Makoto, Bito, Katsutoshi, Mitamura, Atsushi
• Application Number:
  US12/756,176
• Publication Number:
  US 20100259201A1
• Time in Patent Office: Days
• US Class Current: 315/362
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/06181 On opposite sides of the body
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/371 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/40095 Kinked
• CPC Class Codes: H01L 2224/40245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/73221 Strap and wire connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 2224/8385 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/84801 Soldering or alloying
• CPC Class Codes: H01L 2224/8485 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/37 : of an individual strap connector
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/84 : using a strap connector
• CPC Class Codes: H01L 25/165 : Containers
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/18301 : being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance

Abstract

The size of a light emitting device is reduced. The light emitting device for flash photography includes: a luminescent xenon tube; IGBT for the discharge switch of the xenon tube; a capacitor for discharging the xenon tube; and MOSFET for the charge switch of the capacitor. A semiconductor device used in this light emitting device is obtained by sealing the following in a package: a semiconductor chip in which the IGBT is formed; a semiconductor chip in which the MOSFET is formed; a semiconductor chip in which a drive circuit of the IGBT and a control circuit of the MOSFET are formed; and multiple leads coupled thereto.

Claims

1. A semiconductor device used in a light emitting device including a luminescent discharge tube, an IGBT for a discharge switch of the discharge tube coupled in series with the discharge tube, a capacitor coupled in parallel with a series circuit of the discharge tube and the IGBT and used for discharging the discharge tube, and MOSFET for the charge switch of the capacitor, the semiconductor device comprising:

a first semiconductor chip in which the IGBT is formed;

a second semiconductor chip in which the MOSFET is formed;

a third semiconductor chip in which a drive circuit of the IGBT and a control circuit of the MOSFET are formed; and

a sealing body sealing the first, second, and third semiconductor chips.

2. The semiconductor device according to claim 1, further comprising:

a plurality of lead terminals sealed in the sealing body so that part of each thereof is exposed from the sealing body,

wherein in the front surface of the third semiconductor chip, a plurality of pad electrodes are formed,

wherein the lead terminals include;

a first lead terminal for emitter electrically coupled to the emitter of the IGBT;

a second lead terminal for collector electrically coupled to the collector of the IGBT;

a third lead terminal for source electrically coupled to the source of the MOSFET;

a fourth lead terminal for drain electrically coupled to the drain of the MOSFET; and

a plurality of fifth lead terminals respectively electrically coupled to the pad electrodes of the third semiconductor chip.

3. The semiconductor device according to claim 2,

wherein the fifth lead terminals, and the first lead terminal for emitter and the second lead terminal for collector are respectively arranged on different sides of the sealing body as viewed in a plane.

4. The semiconductor device according to claim 3,

wherein the fifth lead terminals, the first lead terminal for emitter, and the second lead terminal for collector are respectively arranged on different sides of the sealing body as viewed in a plane.

5. The semiconductor device according to claim 4,

wherein the first lead terminal for emitter is arranged on a first side of the sealing body as viewed in a plane,

wherein the second lead terminal for collector is arranged on a second side of the sealing body intersecting the first side as viewed in a plane, and

wherein the fifth lead terminals are arranged both on a third side of the sealing body opposite to the first side and on a fourth side opposite to the second side as viewed in a plane.

6. The semiconductor device according to claim 5,

wherein the light emitting device is used for flash photography.

7. The semiconductor device according to claim 6,

wherein in the light emitting device, the MOSFET is brought into on state by the control circuit and the capacitor is thereby charged, and

wherein in the light emitting device, the IGBT is brought into on state by the drive circuit and as a result, the discharge tube is discharged and caused to emit light by voltage supplied by the capacitor.

8. The semiconductor device according to claim 7,

wherein the discharge tube is a xenon tube.

9. The semiconductor device according to claim 8, further comprising:

a first chip placement portion over which the first semiconductor chip is placed through a first joining material layer and which is sealed in the sealing body;

a second chip placement portion over which the second semiconductor chip is placed through a second joining material layer and which is sealed in the sealing body; and

a third chip placement portion over which the third semiconductor chip is placed through a third joining material layer and which is sealed in the sealing body,

wherein the lead terminals are arranged around the first, second, and third chip placement portions.

10. The semiconductor device according to claim 9,

wherein in the front surface of the first semiconductor chip, a first pad electrode for the emitter of the IGBT and a second pad electrode for the gate thereof are formed,

wherein in the back surface of the first semiconductor chip, a first back surface electrode for the collector of the IGBT is formed,

wherein in the front surface of the second semiconductor chip, a third pad electrode for the source of the MOSFET and a fourth pad electrode for the gate thereof are formed,

wherein in the back surface of the second semiconductor chip, a second back surface electrode for the drain of the MOSFET is formed,

wherein the first lead terminal for emitter is electrically coupled to the first pad electrode for emitter of the first semiconductor chip through a first conductive member,

wherein the second lead terminal for collector is integrally coupled to the first chip placement portion,

wherein the third lead terminal for source is electrically coupled to the third pad electrode for source of the second semiconductor chip through a second conductive member,

wherein the fourth lead terminal for drain is integrally coupled to the second chip placement portion, and

wherein the fifth lead terminals are respectively electrically coupled to the pad electrodes of the third semiconductor chip through a third conductive member.

11. The semiconductor device according to claim 10,

wherein the first and second chip placement portions and the first and second joining material layers are conductive,

wherein the first back surface electrode for collector of the first semiconductor chip is electrically coupled to the first chip placement portion through the first joining material layer that is conductive, and

wherein the second back surface electrode for drain of the second semiconductor chip is electrically coupled to the second chip placement portion through the second joining material layer that is conductive.

12. The semiconductor device according to claim 11,

wherein the fourth pad electrode for gate of the second semiconductor chip is electrically coupled to at least one of the pad electrodes of the third semiconductor chip through a fourth conductive member.

13. The semiconductor device according to claim 12,

wherein the first conductive member is a metal plate, and

wherein the second, third, and fourth conductive members are respectively a conductive wire.

14. The semiconductor device according to claim 13,

wherein in the light emitting device, the first lead terminal for emitter of the semiconductor device is coupled to the capacitor and the second lead terminal for collector of the semiconductor device is coupled to the discharge tube.

15. The semiconductor device according to claim 14,

wherein none of the surfaces of the first, second, third chip placement portions on the opposite side to the side where the first, second, and third semiconductor chips are placed is exposed from the sealing body.

16. The semiconductor device according to claim 15,

wherein the lead terminals further includes a sixth lead terminal that is not electrically coupled with any of the electrodes of the first, second, and third semiconductor chips, and

wherein the sixth lead terminal is integrally coupled to the third chip placement portion.

17. The semiconductor device according to claim 16,

wherein the lead terminals further include a seventh lead terminal for the gate of the IGBT electrically coupled to the second pad electrode for gate of the first semiconductor chip through a fifth conductive member.

18. The semiconductor device according to claim 17,

wherein the fifth conductive member is a conductive wire.

19. The semiconductor device according to claim 14,

wherein the second pad electrode for gate of the first semiconductor chip is electrically coupled to at least one of the pad electrodes of the third semiconductor chip through a sixth conductive member.

20. The semiconductor device according to claim 19,

wherein the sixth conductive member is a conductive wire.

21. The semiconductor device according to claim 14,

wherein the surfaces of the first, second, and third chip placement portions on the opposite side to the side where the first, second, and third semiconductor chips are placed are exposed from the sealing body.

22. The semiconductor device according to claim 7, further comprising:

a chip placement portion over which the first, second, and third semiconductor chips are respectively placed through first, second, and third joining material layers and which is sealed in the sealing body,

wherein the lead terminals are arranged around the chip placement portion.

23. The semiconductor device according to claim 22,

wherein in the front surface of the first semiconductor chip, a first pad electrode for the emitter of the IGBT and a second pad electrode for the gate thereof are formed,

wherein in the back surface of the first semiconductor chip, a first back surface electrode for the collector of the IGBT is formed,

wherein in the front surface of the second semiconductor chip, a third pad electrode for the source of the MOSFET, a fourth pad electrode for the gate thereof, and a fifth pad electrode for the drain thereof are formed,

wherein the first lead terminal for emitter is electrically coupled to the first pad electrode for emitter of the first semiconductor chip through a first conductive member,

wherein the second lead terminal for collector is integrally coupled to the first chip placement portion,

wherein the third lead terminal for source is electrically coupled to the third pad electrode for source of the second semiconductor chip through a second conductive member,

wherein the fourth lead terminal for drain is electrically coupled to the fifth pad electrode for drain of the second semiconductor chip through a seventh conductive member, and

wherein the fifth lead terminals are respectively electrically coupled to the pad electrodes of the third semiconductor chip through a third conductive member.

24. The semiconductor device according to claim 23,

wherein the chip placement portion and the first joining material layer are conductive,

wherein the first back surface electrode for collector of the first semiconductor chip is electrically coupled to the chip placement portion through the first joining material layer that is conductive, and

wherein the second and third joining material layers have insulating properties.

25. The semiconductor device according to claim 7, further comprising:

a first chip placement portion over which the first semiconductor chip is placed through a first joining material layer and which is sealed in the sealing body; and

a second chip placement portion over which the second and third semiconductor chips are respectively placed through second and third joining material layers and which is sealed in the sealing body,

wherein the lead terminals are arranged around the first and second chip placement portions.

26. The semiconductor device according to claim 25,

wherein in the front surface of the first semiconductor chip, a first pad electrode for the emitter of the IGBT and a second pad electrode for the gate thereof are formed,

wherein in the back surface of the first semiconductor chip, a first back surface electrode for the collector of the IGBT is formed,

wherein in the front surface of the second semiconductor chip, a third pad electrode for the source of the MOSFET and a fourth pad electrode for the gate thereof are formed,

wherein in the back surface of the second semiconductor chip, a second back surface electrode for the drain of the MOSFET is formed,

wherein the first lead terminal for emitter is electrically coupled to the first pad electrode for emitter of the first semiconductor chip through a first conductive member,

wherein the second lead terminal for collector is integrally coupled to the first chip placement portion,

wherein the third lead terminal for source is electrically coupled to the third pad electrode for source of the second semiconductor chip through a second conductive member,

wherein the fourth lead terminal for drain is integrally coupled to the second chip placement portion, and

wherein the fifth lead terminals are respectively coupled to the pad electrodes of the third semiconductor chip through a third conductive member.

27. The semiconductor device according to claim 26,

wherein the first and second chip placement portions and the first and second joining material layers are conductive,

wherein the first back surface electrode for collector of the first semiconductor chip is electrically coupled to the first chip placement portion through the first joining material layer that is conductive,

wherein the second back surface electrode for drain of the second semiconductor chip is electrically coupled to the second chip placement portion through the second joining material layer that is conductive, and

wherein the third joining material layer has insulating properties.

28. The semiconductor device according to claim 7, further comprising:

a first chip placement portion over which the first and third semiconductor chips are respectively placed through first and third joining material layers and which is sealed in the sealing body; and

a second chip placement portion over which the second semiconductor chip is placed through a second joining material layer and which is sealed in the sealing body,

wherein the lead terminals are arranged around the first and second chip placement portions.

29. The semiconductor device according to claim 28,

wherein in the front surface of the first semiconductor chip, a first pad electrode for the emitter of the IGBT and a second pad electrode for the gate thereof are formed,

wherein in the back surface of the first semiconductor chip, a first back surface electrode for the collector of the IGBT is formed,

wherein in the front surface of the second semiconductor chip, a third pad electrode for the source of the MOSFET and a fourth pad electrode for the gate thereof are formed,

wherein in the back surface of the second semiconductor chip, a second back surface electrode for the drain of the MOSFET is formed,

wherein the first lead terminal for emitter is electrically coupled to the first pad electrode for emitter of the first semiconductor chip through a first conductive member,

wherein the second lead terminal for collector is integrally coupled to the first chip placement portion,

wherein the third lead terminal for source is electrically coupled to the third pad electrode for source of the second semiconductor chip through a second conductive member,

wherein the fourth lead terminal for drain is integrally coupled to the second chip placement portion, and

wherein the fifth lead terminals are respectively electrically coupled to the pad electrodes of the third semiconductor chip through a third conductive member.

30. The semiconductor device according to claim 29,

wherein the first and second chip placement portions and the first and second joining material layers are conductive,

wherein the first back surface electrode for collector of the first semiconductor chip is electrically coupled to the first chip placement portion through the first joining material layer that is conductive,

wherein the second back surface electrode for drain of the second semiconductor chip is electrically coupled to the second chip placement portion through the second joining material layer that is conductive, and

wherein the third joining material layer has insulating properties.

31. The semiconductor device according to claim 5,

wherein the fourth lead terminal for drain is arranged on the first side of the sealing body as viewed in a plane, and

wherein the third lead terminal for source is arranged on the fourth side of the sealing body as viewed in a plane.

32. The semiconductor device according to claim 5,

wherein the fourth lead terminal for drain is arranged on the second side of the sealing body as viewed in a plane, and

wherein the third lead terminal for source is arranged on the third side of the sealing body as viewed in a plane.

33. The semiconductor device according to claim 4,

wherein the lead terminals further include a sixth lead terminal that is not electrically coupled with any of the electrodes of the first, second, and third semiconductor chips.

34. The semiconductor device according to claim 33,

wherein the sixth lead terminal is arranged next to the second lead terminal for collector.

35. The semiconductor device according to claim 34,

wherein the sixth lead terminal is arranged on both adjacent sides of the second lead terminal for collector.

36. The semiconductor device according to claim 34,

wherein the second lead terminal for collector and the fourth lead terminal for drain are arranged on the same side of the sealing body as viewed in a plane, and

wherein the sixth lead terminal is arranged between the second lead terminal for collector and the fourth lead terminal for drain.