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FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM

  • US 20100260935A1
  • Filed: 04/05/2010
  • Published: 10/14/2010
  • Est. Priority Date: 04/09/2009
  • Status: Active Grant
First Claim
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1. A film deposition apparatus for depositing a film on a substrate by relatively rotating a table on which the substrate is placed and plural reaction gas supplying portions configured to supply corresponding reaction gases that react with one another in order to supply in turn the reaction gases to the substrate, thereby producing a layer of a reaction product, the film deposition apparatus comprising:

  • a substrate receiving area provided to place the substrate on an upper surface of the table in a vacuum chamber;

    a rotational mechanism configured to rotate the plural reaction gas supplying portions and the table in relation to each other so that the substrate is located in turn in plural process areas where the corresponding reaction gases are supplied from the corresponding gas supplying portions;

    a first reaction gas supplying portion configured to supply a first reaction gas in order to adsorb the first reaction gas on the substrate, wherein the first reaction gas supplying portion opposes the substrate receiving area on the table;

    an auxiliary gas supplying portion configured to supply to the substrate an auxiliary gas that reacts with the first reaction gas adsorbed on the substrate to produce an intermediate product having reflowability, wherein the auxiliary gas supplying portion is provided away from and downstream relative to the first reaction gas supplying portion along a relative rotation direction of the table in relation to the plural reaction gas supplying portions, and opposes the wafer receiving area on the table;

    a second reaction gas supplying portion configured to supply to the substrate a second reaction gas that reacts with the intermediate product on the substrate to produce a reaction product, wherein the second reaction gas supplying portion is provided downstream relative to the auxiliary gas supplying portion along the relative rotation direction, and opposes the wafer receiving area on the table; and

    a heating portion configured to heat the substrate in order to densify the reaction product, wherein the heating portion is provided downstream relative to the second gas supplying portion and upstream relative to the first reaction gas supplying portion along the relative rotation direction, and opposes the wafer receiving area on the table.

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