BASE STRUCTURE FOR III-V SEMICONDUCTOR DEVICES ON GROUP IV SUBSTRATES AND METHOD OF FABRICATION THEREOF
First Claim
1. A base structure for fabricating semiconductor devices comprising:
- (a) a Group IV semiconductor substrate;
(b) a nucleation layer deposited on said substrate, said nucleation layer comprising a Group III-V material, wherein said nucleation layer is one of closely lattice matched and lattice matched to said substrate; and
(c) a buffer layer deposited on said nucleation layer, said buffer layer comprising a III-V material, wherein said buffer layer is lattice mismatched to said nucleation layer.
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Abstract
The structure presented herein provides a base structure for semiconductor devices, in particular for III-V semiconductor devices or for a combination of III-V and Group IV semiconductor devices. The fabrication method for a base substrate comprises a buffer layer, a nucleation layer, a Group IV substrate and possibly a dopant layer. There are, in a general aspect, two growth steps: firstly the growth of a lattice-matched III-V material on a Group IV substrate, followed by secondly the growth of a lattice-mismatched III-V layer. The first layer, called the nucleation layer, is lattice-matched or closely lattice-matched to the Group IV substrate while the following layer, the buffer layer, deposited on top of the nucleation layer, is lattice-mismatched to the nucleation layer. The nucleation layer can further be used as a dopant source to the Group IV substrate, creating a p-n junction in the substrate through diffusion. Alternatively a separate dopant layer may be introduced.
26 Citations
32 Claims
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1. A base structure for fabricating semiconductor devices comprising:
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(a) a Group IV semiconductor substrate; (b) a nucleation layer deposited on said substrate, said nucleation layer comprising a Group III-V material, wherein said nucleation layer is one of closely lattice matched and lattice matched to said substrate; and (c) a buffer layer deposited on said nucleation layer, said buffer layer comprising a III-V material, wherein said buffer layer is lattice mismatched to said nucleation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method of fabricating a base structure for forming a semiconductor device, said method comprising the steps of:
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providing a Group IV semiconductor substrate; depositing a nucleation layer on said substrate, said nucleation layer comprising a Group III-V material, wherein said nucleation layer is one of closely lattice matched and lattice matched to said substrate; and depositing a buffer layer on said nucleation layer, said buffer layer comprising a III-V material, wherein said buffer layer is lattice mismatched to said nucleation layer. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32)
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Specification