SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A semiconductor device comprising:
- a gate electrode layer;
a gate insulating layer over the gate electrode layer;
an oxide layer over the gate insulating layer;
an oxide semiconductor layer including insulating oxide over the oxide layer; and
a source electrode layer and a drain electrode layer over the oxide semiconductor layer including insulating oxide,wherein the oxide layer and the oxide semiconductor layer including insulating oxide include Zn,wherein the oxide layer and the oxide semiconductor layer including insulating oxide do not include indium,wherein the oxide semiconductor layer including insulating oxide has an amorphous structure with a conductivity lower than that of the oxide layer, andwherein the oxide semiconductor layer including insulating oxide is electrically connected to the source electrode layer and the drain electrode layer.
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Accused Products
Abstract
An object is to provide a transistor including an oxide layer which includes Zn and does not include a rare metal such as In or Ga. Another object is to reduce an off current and stabilize electric characteristics in the transistor including an oxide layer which includes Zn. A transistor including an oxide layer including Zn is formed by stacking an oxide semiconductor layer including insulating oxide over an oxide layer so that the oxide layer is in contact with a source electrode layer or a drain electrode layer with the oxide semiconductor layer including insulating oxide interposed therebetween, whereby variation in the threshold voltage of the transistor can be reduced and electric characteristics can be stabilized.
83 Citations
29 Claims
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1. A semiconductor device comprising:
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a gate electrode layer; a gate insulating layer over the gate electrode layer; an oxide layer over the gate insulating layer; an oxide semiconductor layer including insulating oxide over the oxide layer; and a source electrode layer and a drain electrode layer over the oxide semiconductor layer including insulating oxide, wherein the oxide layer and the oxide semiconductor layer including insulating oxide include Zn, wherein the oxide layer and the oxide semiconductor layer including insulating oxide do not include indium, wherein the oxide semiconductor layer including insulating oxide has an amorphous structure with a conductivity lower than that of the oxide layer, and wherein the oxide semiconductor layer including insulating oxide is electrically connected to the source electrode layer and the drain electrode layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A manufacturing method of a semiconductor device, comprising:
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forming a gate electrode layer over a substrate; forming a gate insulating layer over the gate electrode layer; forming an oxide film over the gate insulating layer by a sputtering method using a target containing Zn; forming an oxide semiconductor film including insulating oxide, which includes silicon oxide, over the oxide film by a sputtering method using a target containing SiO2 and Zn; etching the oxide film and the oxide semiconductor film including insulating oxide to form an oxide layer and an oxide semiconductor layer including insulating oxide; forming a conductive layer over the oxide semiconductor layer including insulating oxide; and etching the oxide semiconductor layer including insulating oxide and the conductive layer to form a source electrode layer and a drain electrode layer, wherein the target containing SiO2 and Zn contains SiO2 at 2.5 percent by weight or more and 20 percent by weight or less, and wherein the oxide layer and the oxide semiconductor layer including insulating oxide do not include indium. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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24. A manufacturing method of a semiconductor device, comprising:
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forming a gate electrode layer over a substrate; forming a gate insulating layer over the gate electrode layer; forming an oxide film over the gate insulating layer by a sputtering method using a target containing Zn; etching the oxide film to form an oxide layer; forming an oxide semiconductor film including insulating oxide, which includes silicon oxide, over the oxide layer by a sputtering method using a target containing SiO2 and Zn; etching the oxide semiconductor film including insulating oxide so that an oxide semiconductor layer including insulating oxide is formed to cover the oxide layer; forming a conductive layer over the oxide semiconductor layer including insulating oxide; and etching the oxide semiconductor layer including insulating oxide and the conductive layer to form a source electrode layer and a drain electrode layer, wherein the target containing SiO2 and Zn contains SiO2 at 2.5 percent by weight or more and 20 percent by weight or less, and wherein the oxide layer and the oxide semiconductor layer including insulating oxide do not include indium. - View Dependent Claims (25, 26, 27, 28, 29)
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Specification