FIELD-EFFECT TRANSISTOR

• US 20100264419A1
• Filed: 01/20/2009
• Published: 10/21/2010
• Est. Priority Date: 01/23/2008
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Iwasaki, Tatsuya, Itagaki, Naho, Goyal, Amita
• Granted Patent: US 8,314,425 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A field-effect transistor includes at least a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode, which are formed on a substrate. The channel layer is made of an amorphous oxide material that contains at least In and B, and the amorphous oxide material has an element ratio B/(In+B) of 0.05 or higher and 0.29 or lower.

Claims

1. A field-effect transistor comprising at least a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode, which are formed on a substrate,

wherein the channel layer is made of an amorphous oxide material that contains at least In and B, and

wherein the amorphous oxide material has an element ratio B/(In+B) of 0.05 or higher and 0.29 or lower.

2. A field-effect transistor according to claim 1, wherein the element ratio B/(In+B) of the amorphous oxide material is 0.1 or higher and 0.22 or lower.

3. A field-effect transistor according to claim 2, wherein the element ratio B/(In+B) of the amorphous oxide material is 0.12 or higher and 0.2 or lower.

5. A field-effect transistor according to claim 1, wherein the gate insulating layer is made of a silicon oxide.

6. A field-effect transistor according to claim 5, wherein the channel layer and the gate insulating layer are deposited by sputtering.

7. A field-effect transistor according to claim 1

wherein the field-effect transistor is incorporated in a display that includes a pixel device, and

wherein an electrode of the pixel device is connected with one of the source electrode and the drain electrode of the field-effect transistor.

8. A field-effect transistor according to claim 7, wherein the pixel device is an electroluminescence device.

9. A field-effect transistor according to claim 7, wherein the pixel device is a liquid crystal cell.

10. A field-effect transistor according to claim 7,

wherein the pixel device is one of a plurality of pixel devices and the field-effect transistor is one of a plurality of field-effect transistors, and

wherein the plurality of pixel devices and the plurality of field-effect transistors are two-dimensionally arranged on a substrate.

4. A field-effect transistor comprising at least a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode, which are formed on a substrate,

wherein the channel layer is made of an amorphous oxide material that contains at least In, Zn, and B, and

wherein the amorphous oxide material has an element ratio B/(In+Zn+B) of 0.05 or higher and 0.29 or lower.