YELLOW LIGHT EMITTING DIODE AND LIGHT EMITTING DEVICE HAVING THE SAME

• US 20100264431A1
• Filed: 06/30/2009
• Published: 10/21/2010
• Est. Priority Date: 04/21/2009
• Status: Abandoned Application

• Current Assignee: Foxsemicon Integrated Technology Incorporated
• Original Assignee: Foxsemicon Integrated Technology Incorporated
• Inventors: AKUTSU, NAKAO, LAI, CHIH-MING
• Application Number:
  US12/495,785
• Publication Number:
  US 20100264431A1
• Time in Patent Office: Days
• US Class Current: 257/89
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

An exemplary yellow light emitting diode (LED) includes a substrate, a LED die, a phosphor layer and an encapsulant. The LED die is arranged on the substrate and comprises an indium gallium aluminum nitride represented by the formula In_xGa_yAl_zN, wherein x+y+z=1, 0≦x≦1, 0≦y≦1 and 0≦z≦1. The phosphor layer is a yttrium aluminum garnet phosphor layer configured on the light path of the LED die. The phosphor layer has a thickness of more than 250 micron. The encapsulant covers the LED die and the phosphor layer.

Claims

1. A yellow light emitting diode (LED), comprising:

a substrate;

a LED die arranged on the substrate for emitting light along a light path, the LED die comprising an indium gallium aluminum nitride represented by the formula In_xGa_yAl_zN, wherein x+y+z=1, 0≦

x≦

1, 0≦

y≦

1, an 0≦

z≦

1;

a phosphor layer arranged on the light path of the LED die, the phosphor layer being a yttrium aluminum garnet phosphor layer and having a thickness of more than 250 micron; and

an encapsulant covering the LED die and the phosphor layer.

2. The yellow LED according to claim 1, wherein the substrate comprises a reflective cup for receiving the LED die, the reflective cup defines a frustoconical recess, the LED die is mounted on a bottom surface of the reflective cup, and the phosphor layer is formed on an outer surface of the LED die.

3. The yellow LED according to claim 1, wherein the substrate comprises a reflective cup for receiving the LED die, the reflective cup defines a frustoconical recess, the LED die is mounted on a bottom surface of the reflective cup, the phosphor layer is arranged at a top opening of the reflecting cup, and the phosphor layer is parallel to the bottom surface and covers the top opening of the reflecting cup.

4. The yellow LED according to claim 1, wherein the encapsulant comprises a light emitting surface for outputting light from the LED die to the exterior of the encapsulant, the substrate comprises a reflective cup for receiving the LED die, the LED die is arranged on a bottom of the reflective cup, the phosphor layer is arranged at a top opening of the reflecting cup, and the phosphor layer is parallel to the light emitting surface and covers the top opening of the reflecting cup.

5. The yellow LED according to claim 1, wherein the phosphor layer has a thickness of more than 400 micron.

6. The yellow LED according to claim 1, wherein an excitation wavelength of the phosphor layer is in a range from 560 to 590 nanometers.

7. The yellow LED according to claim 1, wherein an emission wavelength of the LED die is in a range from 260 to 500 nanometers.

8. The yellow LED according to claim 7, wherein the emission wavelength of the LED die is in a range from 380 to 480 nanometers.

9. A light emitting device, comprising:

a plurality of yellow LEDs each having a substrate, a LED die for emitting light along a light path, a phosphor layer and an encapsulant, the LED die being arranged on the substrate, the LED die comprising an indium gallium aluminum nitride represented by the formula In_xGa_yAl_zN wherein x+y+z=1, 0≦

x≦

1, 0≦

y≦

1, and 0≦

z≦

1, the phosphor layer being a yttrium aluminum garnet phosphor layer arranged on the light path of the LED die and having a thickness of more than 250 micron, the encapsulant covering the LED die and the phosphor layer; and

a plurality of blue LEDs;

wherein the yellow LEDs and the blue LEDs are in an amount ratio of 3;

2.

10. The light emitting device according to claim 9, wherein the substrate comprises a reflective cup for receiving the LED die, the reflective cup defines a frustoconical recess, the LED die is mounted on a bottom surface of the reflective cup, and the phosphor layer is formed on an outer surface of the LED die.

11. The light emitting device according to claim 9, wherein the substrate comprises a reflective cup for receiving the LED die, the reflective cup defines a frustoconical recess, the LED die is mounted on a bottom surface of the reflective cup, the phosphor layer is arranged at a top opening of the reflecting cup, and the phosphor layer is parallel to the bottom surface and covers the top opening of the reflecting cup.

12. The light emitting device according to claim 9, wherein the encapsulant comprises a light emitting surface for outputting light from the LED die to the exterior of the encapsulant, the substrate comprises a reflective cup for receiving the LED die, the LED die is mounted on a bottom of the reflective cup, the phosphor layer is arranged at a top opening of the reflecting cup, and the phosphor layer is parallel to the light emitting surface and covers the top opening of the reflecting cup.

13. The light emitting device according to claim 9, wherein the phosphor layer having a thickness more than 400 micron.

14. The light emitting device according to claim 9, wherein an emission wavelength of the blue LEDs is in a range from 420˜

480 nanometers.

15. A light emitting device, comprising:

a plurality of yellow LEDs each having a substrate, a LED die for emitting light along a light path, a phosphor layer and an encapsulant, the LED die being arranged on the substrate, the LED die comprising an indium gallium aluminum nitride represented by the formula In_xGa_yAl_zN, wherein x+y+z=1, 0≦

x≦

1, 0≦

y≦

1, and 023 z≦

1, the phosphor layer being a yttrium aluminum garnet phosphor layer arranged on the light path of the LED die and having a thickness of more than 250 micron, the encapsulant covering the LED die and the phosphor layer;

a plurality of blue LEDs; and

at least one red LED;

wherein the yellow LEDs, the blue LEDs and the at least one red LED are in an amount ratio of 2;

2;

1.

16. The light emitting device according to claim 15, further comprising at least one green LEDs, the yellow LEDs, the blue LEDs, the at least one red LED and the at least one green LED being in an amount ratio of 2:

2;

1;

1.

17. The light emitting device according to claim 15, wherein the substrate comprises a reflective cup for receiving the LED die, the reflective cup defines a frustoconical recess, the LED die is mounted on a bottom surface of the reflective cup, and the phosphor layer is formed on an outer surface of the LED die.

18. The light emitting device according to claim 15, wherein the substrate comprises a reflective cup for receiving the LED die, the reflective cup defines a frustoconical recess, the LED die is mounted on a bottom surface of the reflective cup, the phosphor layer is arranged at a top opening of the reflecting cup, and the phosphor layer is parallel to the bottom surface and covers the top opening of the reflecting cup.

19. The light emitting device according to claim 15, wherein the encapsulant comprises a light emitting surface for outputting light from the LED die to the exterior of the encapsulant, the substrate comprises a reflective cup for receiving the LED die, the LED die is mounted on a bottom of the reflective cup, the phosphor layer is arranged at a top opening of the reflecting cup, and the phosphor layer is parallel to the light emitting surface and covers the top opening of the reflecting cup.

20. The light emitting device according to claim 15, wherein the phosphor layer has a thickness of more than 400 micron.