Optoelectronic Semiconductor Chip

• US 20100264434A1
• Filed: 09/14/2006
• Published: 10/21/2010
• Est. Priority Date: 09/29/2005
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Wirth, Ralph, Ploessl, Andreas
• Granted Patent: US 8,158,995 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

An optoelectronic semiconductor chip is disclosed which emits electromagnetic radiation from its front side (7) during operation, comprising a semiconductor layer sequence (1) having an active region (4) suitable for generating the electromagnetic radiation, and a separately produced TCO supporting substrate (10), which is arranged at the semiconductor layer sequence and has a material from the group of transparent conductive oxides (TCO) and mechanically supports the semiconductor layer sequence (1).

Claims

1. An optoelectronic semiconductor chip which emits electromagnetic radiation from its front side during operation, comprising:

a semiconductor layer sequence having an active region suitable for generating the electromagnetic radiation; and

a separately produced TCO supporting substrate, which is arranged at the semiconductor layer sequence and has a material from the group of transparent conductive oxides (“

TCO”

) and mechanically supports the semiconductor layer sequence.

2. The optoelectronic semiconductor chip as claimed in claim 1, in which the TCO supporting substrate has a refractive index which is less than the refractive index of the semiconductor layer sequence.

3. The optoelectronic semiconductor chip as claimed in claim 1, in which the TCO supporting substrate is fitted to the semiconductor layer sequence by means of direct bonding, diffusion bonding or adhesive bonding.

4. The optoelectronic semiconductor chip as claimed in claim 3, in which the TCO supporting substrate is fitted to the semiconductor layer sequence by means of a bis-benzocyclobutene-containing adhesive.

5. The optoelectronic semiconductor chip as claimed in claim 1, in which a TCO layer likewise having a material from the group of TCOs is arranged between the semiconductor layer sequence and the TCO supporting substrate.

6. The optoelectronic semiconductor chip as claimed in claim 1, in which a TCO contact layer is arranged between the semiconductor layer sequence and the TCO supporting substrate, said TCO contact layer producing an electrical contact between the semiconductor layer sequence and the TCO supporting substrate and having a material from the group of transparent conductive oxides (TCOs).

7. The optoelectronic semiconductor chip as claimed in claim 6, in which the TCO contact layer has a thickness which is ≧

1 μ

m and ≦

5 μ

m.

8. The optoelectronic semiconductor chip as claimed in claim 1, in which a layer that reflects the radiation of the semiconductor chip is arranged between the active region of the semiconductor layer sequence and the TCO supporting substrate.

9. The optoelectronic semiconductor chip as claimed in claim 8, in which the reflective layer is a DBR mirror (distributed Bragg reflector mirror).

10. The optoelectronic semiconductor chip as claimed in claim 1, in which a rear side of the semiconductor chip, arranged opposite the front side of said chip, comprises a metal layer.

11. The optoelectronic semiconductor chip as claimed in claim 10, in which the metal layer is formed in reflective fashion for the radiation of the semiconductor chip.

12. The optoelectronic semiconductor chip as claimed in claim 1, the front side of which is roughened.

13. The optoelectronic semiconductor chip as claimed in claim 1, in which a current spreading layer having a material from the group of TCOs is arranged on that side of the semiconductor layer sequence which faces the front side of said chip.