SEMICONDUCTOR LIGHT EMITTING DEVICE
First Claim
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1. A semiconductor light emitting device comprising:
- a substrate comprising a plurality of protrusions that are disposed on a surface of the substrate in a two-dimensionally repeated pattern;
a plurality of semiconductor layers disposed on the surface of the substrate and comprising a material different from the substrate; and
an ohmic electrode disposed on a top layer of the semiconductor layers and comprising a plurality of openings,wherein at least some of the openings overlay the protrusions so that at least one protrusion is located at a corresponding opening in plan view of the semiconductor light emitting device so that at least part of a lateral edge portion of the one protrusion is located in the corresponding opening in the plan view, andthe protrusions are configured to scatter or diffract light generated in the semiconductor layers so as to emit light through the opening of the ohmic electrode.
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Abstract
A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.
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Citations
14 Claims
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1. A semiconductor light emitting device comprising:
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a substrate comprising a plurality of protrusions that are disposed on a surface of the substrate in a two-dimensionally repeated pattern; a plurality of semiconductor layers disposed on the surface of the substrate and comprising a material different from the substrate; and an ohmic electrode disposed on a top layer of the semiconductor layers and comprising a plurality of openings, wherein at least some of the openings overlay the protrusions so that at least one protrusion is located at a corresponding opening in plan view of the semiconductor light emitting device so that at least part of a lateral edge portion of the one protrusion is located in the corresponding opening in the plan view, and the protrusions are configured to scatter or diffract light generated in the semiconductor layers so as to emit light through the opening of the ohmic electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification