MEMORY SYSTEM WITH DATA LINE SWITCHING SCHEME
First Claim
1. A non-volatile storage device, comprising:
- a plurality of non-volatile storage elements;
one or more control circuits that perform memory operations; and
a first set of selection circuits, each selection circuit of the first set of selection circuits is in communication with the one or more control circuits and a different group of two or more of the non-volatile storage elements so that during memory operations each selection circuit of the first set of selection circuits selectively connects a respective first non-volatile storage element of the group to the one or more control circuits until a memory operation completes for the first non-volatile storage element of the group and then selectively connects a second non-volatile storage element of the group to the one or more control circuits independent of other selection circuits of the first set of selection circuits.
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Accused Products
Abstract
A storage system includes a three-dimensional memory array that has multiple layers of non-volatile storage elements grouped into blocks. Each block includes a subset of first selection circuits for selectively coupling a subset of array lines (e.g. bit lines) of a first type to respective local data lines. Each block includes a subset of second selection circuits for selectively coupling a subset of the respective local data lines to global data lines that are connected to control circuitry. To increase the performance of memory operations, the second selections circuits can change their selections independently of each other. For example, a memory operation is performed concurrently on a first non-volatile storage element of each group of a plurality of groups of non-volatile storage elements. Completion of the memory operation for the first non-volatile storage element of each group is independently detected. A memory operation on a second non-volatile storage element of each group is independently commenced for each group upon independently detecting completion of the memory operation for the first non-volatile storage element of the respective group.
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Citations
25 Claims
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1. A non-volatile storage device, comprising:
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a plurality of non-volatile storage elements; one or more control circuits that perform memory operations; and a first set of selection circuits, each selection circuit of the first set of selection circuits is in communication with the one or more control circuits and a different group of two or more of the non-volatile storage elements so that during memory operations each selection circuit of the first set of selection circuits selectively connects a respective first non-volatile storage element of the group to the one or more control circuits until a memory operation completes for the first non-volatile storage element of the group and then selectively connects a second non-volatile storage element of the group to the one or more control circuits independent of other selection circuits of the first set of selection circuits. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A non-volatile storage device, comprising:
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a plurality of non-volatile storage elements, the plurality of non-volatile storage elements includes multiple subsets of non-volatile storage elements, the multiple subsets of non-volatile storage elements include a first subset of non-volatile storage elements; control lines in communication with the non-volatile storage elements; local data lines, each subset of non-volatile storage elements includes its own set of local data lines; a set of global data lines for the multiple subsets of non-volatile storage elements; first selection circuits, the first selection circuits selectively connect a subset of the local data lines to the global data lines; second selection circuits that selectively connecting a subset of the control lines to the first local data lines; and control circuits in communication with the global data lines, each selection circuit of the first set of selection circuits is in communication with a different group of two or more of the local data lines and one global data line so that during memory operations each selection circuit of the first set of selection circuits selectively connects a respective first non-volatile storage element to the control circuits until a memory operation completes for the respective first non-volatile storage element and then selectively connects a respective second non-volatile storage element to the control circuits independent of other selection circuits of the first set of selection circuits in order to perform a memory operation for the second non-volatile storage element. - View Dependent Claims (14, 15, 16, 17)
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18. A method for operating a data storage system, comprising:
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concurrently performing a memory operation on a first non-volatile storage element of each group of a plurality of groups of non-volatile storage elements; independently detecting completion of the memory operation for the first non-volatile storage element of each group; and independently commencing a memory operation on a second non-volatile storage element of each group upon independently detecting completion of the memory operation for the first non-volatile storage element of each group. - View Dependent Claims (19, 20, 21, 22)
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23. A method for operating a data storage system, comprising:
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selectively connecting a set of control lines to a set of local data lines so that each local data line of the set of local data lines is connected to one control line of the set of control lines, each control line is in communication with a different non-volatile data storage element so that each data line of the set of local data lines is in communication with a respective non-volatile storage element, the set of local data lines includes a first subset of the local data lines and a second subset of the local data lines; selectively connecting the first subset of the local data lines to a set of global data lines, the global data lines are connected to control circuitry; performing a first memory operation on non-volatile storage elements in communication with the first subset of local data lines, the memory operation is performed using the control circuitry; separately detecting when each non-volatile storage elements in communication with the first subset of local data lines has completed the memory operation; for each global data line of the set of global data lines, independently disconnecting a respective local data line of the first subset of local data lines and independently connecting a local data line from the second subset of local data lines in response to detecting completion of the memory operation for the respective non-volatile storage element in communication with the respective local data line of the first subset of local data lines; and performing a second memory operation on non-volatile storage elements in communication with the second subset of local data lines, the second memory operation is started independently for non-volatile storage elements in communication with the second subset of local data lines in response to selectively connecting respective local data lines from the second subset of local data lines to the global data lines. - View Dependent Claims (24, 25)
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Specification