SEMICONDUCTOR LAYER STRUCTURE

• US 20100265976A1
• Filed: 10/21/2008
• Published: 10/21/2010
• Est. Priority Date: 11/09/2007
• Status: Abandoned Application

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Kauer, Matthias, Tan, Wei-Sin, Bousquet, Valerie, Takahashi, Koji, Heffernan, Jonathan
• Application Number:
  US12/741,217
• Publication Number:
  US 20100265976A1
• Time in Patent Office: Days
• US Class Current: 372/44.10
• CPC Class Codes: H01L 21/02389 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01S 5/221 containing aluminium
• CPC Class Codes: H01S 5/2216 nitrides
• CPC Class Codes: H01S 5/2231 with inner confining structure only between the active layer and the upper electrode
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

A III-nitride compound device which has a layer of AlInN (7) having a non-zero In content, for example acting as a current blocking layer, is described. The layer of AlInN (7) has at least aperture defined therein. The layer of AlInN (7) is grown with a small lattice-mismatch with an underlying layer, for example an underlying GaN layer, thus preventing added crystal strain in the device. By using optimised growth conditions the resistivity of the AlInN is made higher than 10₂ ohm·cm thus preventing current flow when used as a current blocking layer in a multilayer semiconductor device with layers having smaller resistivity. As a consequence, when the AlInN layer has an opening and is placed in a laser diode device, the resistance of the device is lower resulting in a device with better performance.

Claims

1. A III-nitride semiconductor multilayer structure, wherein a first layer of the structure comprises a layer of single crystal AlInN having a non-zero In content, the AlInN layer having at least one aperture whereby the AlInN layer does not extend over the area of the multilayer structure.

2. A III-nitride semiconductor multilayer structure as claimed in claim 1 wherein the AlInN layer acts, in use, as a current confinement layer.

3. A III-nitride semiconductor multilayer structure as claimed in claim 1 wherein the AlInN layer has a resistivity higher than 1×

10² Ω

·

cm.

4. A III-nitride semiconductor multilayer structure as claimed in claim 1 wherein the AlInN layer has a resistivity higher than 1×

10³ Ω

·

cm.

5. A III-nitride semiconductor multilayer structure as claimed in claim 1 wherein the AlInN layer has a resistivity higher than 1×

10⁴ Ω

·

cm.

6. A III-nitride semiconductor multilayer structure as claimed in claim 1 wherein the AlInN semiconductor layer has a thickness greater than 10 nm.

7. A III-nitride semiconductor multilayer structure as claimed in claim 1 wherein the AlInN layer has an indium content of between 15% and 25%.

8. A III-nitride semiconductor multilayer structure as claimed in claim 1 wherein the AlInN layer has an indium content of between 15% and 20%.

9. A III-nitride semiconductor multilayer structure as claimed in claim 1 wherein the AlInN layer has an indium content of approximately 18%.

10. A III-nitride semiconductor multilayer structure as claimed in claim 7 wherein the first semiconductor layer is substantially lattice-matched to a second semiconductor layer underlying the first layer.

11. A III-nitride semiconductor multilayer structure as claimed in claim 1 and further comprising an active region for light-emission.

12. A III-nitride semiconductor multilayer structure as claimed in claim 11 where the AlInN layer is placed above the active region.

13. A III-nitride semiconductor multilayer structure as claimed in claim 11 where the AlInN layer is placed below the active region.

14. A III-nitride semiconductor multilayer structure as claimed in claim 11 where the multilayer structure further comprises a p-type cladding layer and the AlInN layer is placed in the p-type cladding layer.

15. A III-nitride semiconductor multilayer structure as claimed in claim 11 where the multilayer structure further comprises an n-type cladding layer and the AlInN layer is placed in the n-type cladding layer.

16. A III-nitride semiconductor multilayer structure as claimed in claim 11 and further comprising a p-electrode, wherein the p-electrode is wider than the aperture in the AlInN layer.

17. A III-nitride semiconductor multilayer structure as claimed in claim 11 and comprising a semiconductor laser diode.

18. A III-nitride semiconductor multilayer structure as claimed in claim 11 and comprising a semiconductor light-emitting diode.

19. A III-nitride multilayer semiconductor structure as claimed in claim 18 and comprising a vertical cavity semiconductor light emitting diode.

20. A III-nitride semiconductor multilayer structure as claimed in claim 1 and comprising an electronic device.

21. A III-nitride semiconductor multilayer structure as claimed in claim 1, wherein the single crystal AlInN layer is formed by molecular beam epitaxy.

22. A III-nitride semiconductor multilayer structure as claimed in claim 1 wherein the single crystal AlInN layer contains at least one of:

silicon, magnesium, carbon, oxygen and phosphorus.

23. A III-nitride semiconductor multilayer structure as claimed in claim 1, wherein a third layer of the structure comprises a layer of single crystal AlInN, the AlInN layer having at least one aperture whereby the AlInN layer does not extend over the area of the multilayer structure.

24. A method of growing a layer of single-crystal AlInN having a non-zero In content, the method comprising the steps of:

providing an (Al,Ga,In)N substrate into an MBE growth chamber;

raising the substrate temperature to a desired growth temperature;

supplying activated nitrogen to a surface of the (AI,Ga,In)N substrate; and

supplying Al and In to the growth chamber.

25. A method as claimed in claim 24 and comprising supplying Al and In to the growth chamber at a V/III ratio greater than 1.