SEMICONDUCTOR LIGHT EMITTING DEVICE
First Claim
1. A method of manufacturing a semiconductor light emitting device comprising a substrate, a plurality of GaN-based semiconductor layers formed on the substrate and an ohmic electrode formed on the GaN-based semiconductor layers so that light generated in the GaN-based semiconductor layers is emitted from the ohmic electrode or the substrate, the method comprising:
- providing a C plane (0001) sapphire substrate;
forming a plurality of protrusions on a primary surface of the sapphire substrate in a two-dimensionally repeated pattern so that the protrusions stand on a base flat portion of the sapphire substrate and have top portions that are higher than the base flat portion;
growing epitaxially from the top portions of the protrusions and the base flat portion of the sapphire substrate a GaN based semiconductor layer so as to cover the protrusions; and
forming an ohmic electrode over the GaN-based semiconductor layer,wherein in plan view of the sapphire substrate the GaN-based semiconductor layer grows in a shape of a hexagon defined by A-axis of the GaN-based semiconductor layer on the top portions of the protrusions, andin plan view of the sapphire substrate the GaN-based semiconductor layer grows with a growing face that is not parallel to A-axis of the GaN-based semiconductor layer on the base flat portion of the sapphire substrate.
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Abstract
A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.
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Citations
11 Claims
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1. A method of manufacturing a semiconductor light emitting device comprising a substrate, a plurality of GaN-based semiconductor layers formed on the substrate and an ohmic electrode formed on the GaN-based semiconductor layers so that light generated in the GaN-based semiconductor layers is emitted from the ohmic electrode or the substrate, the method comprising:
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providing a C plane (0001) sapphire substrate; forming a plurality of protrusions on a primary surface of the sapphire substrate in a two-dimensionally repeated pattern so that the protrusions stand on a base flat portion of the sapphire substrate and have top portions that are higher than the base flat portion; growing epitaxially from the top portions of the protrusions and the base flat portion of the sapphire substrate a GaN based semiconductor layer so as to cover the protrusions; and forming an ohmic electrode over the GaN-based semiconductor layer, wherein in plan view of the sapphire substrate the GaN-based semiconductor layer grows in a shape of a hexagon defined by A-axis of the GaN-based semiconductor layer on the top portions of the protrusions, and in plan view of the sapphire substrate the GaN-based semiconductor layer grows with a growing face that is not parallel to A-axis of the GaN-based semiconductor layer on the base flat portion of the sapphire substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification