ENHANCED SCAVENGING OF RESIDUAL FLUORINE RADICALS USING SILICON COATING ON PROCESS CHAMBER WALLS

• US 20100267224A1
• Filed: 04/12/2010
• Published: 10/21/2010
• Est. Priority Date: 04/20/2009
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: PORSHNEV, PETER, LEE, DONG HYUNG, VELLAIKAL, MANOJ, FOAD, MAJEED, CHOI, DONGWON, POON, TZE
• Granted Patent: US 8,642,128 B2
• Time in Patent Office: Days
• US Class Current: 438/513
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32467 Material
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: H01J 37/32871 Means for trapping or directing unwanted particles
• CPC Class Codes: H01L 21/2236 from or into a plasma phase

Abstract

Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.

Claims

1. An apparatus for substrate processing, comprising:

a process chamber having a chamber body defining an inner volume; and

a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom.

2. The apparatus of claim 1, wherein the apparatus is configured for plasma processing within the inner volume.

3. The apparatus of claim 2, wherein the plasma flows along a toroidal path, and wherein the inner volume forms a portion of the toroidal path.

4. The apparatus of claim 1, wherein the silicon containing coating substantially covers surfaces of the chamber body that define the inner volume.

5. The apparatus of claim 1, wherein at least an outer portion of the silicon containing coating consists essentially of silicon.

6. The apparatus of claim 1, wherein the silicon containing coating further comprises:

a first layer comprising silicon and oxygen; and

a second layer disposed over the first layer, wherein the second layer comprises at least 35 percent silicon.

7. The apparatus of claim 6, wherein the silicon containing coating further comprises:

a third layer disposed between the first layer and the second layer, wherein the third layer comprises silicon; and

a fourth layer disposed between the third layer and the second layer, wherein the fourth layer comprises silicon and oxygen.

8. The apparatus of claim 6, wherein the second layer further comprises oxygen, and wherein a first concentration of oxygen in the second layer proximate the interface of the first and second layers is greater than a second concentration of oxygen in the second layer proximate an outer surface of the second layer.

9. The apparatus of claim 8, wherein the concentration of oxygen proximate the outer surface of the second layer is substantially zero.

10. The apparatus of claim 1, wherein the silicon containing coating further comprises at least one of boron, arsenic, germanium, carbon, nitrogen, or phosphorous.

11. A method for forming a silicon containing coating in a process chamber, comprising:

providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and

forming a silicon containing coating on an interior surface of the process chamber at least partially from the first process gas, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.

12. The method of claim 11, wherein the first process gas comprises silane (SiH4).

13. The method of claim 11, wherein the first process gas further comprises at least one of boron, arsenic, germanium, carbon, nitrogen, or phosphorous.

14. The method of claim 11, wherein the silicon containing coating comprises a first layer comprising silicon and oxygen and a second layer comprising at least 35 percent silicon, and further comprising:

forming the first layer on at least a portion of an interior surface of the chamber body from the first process gas, wherein the first process gas further comprises an oxygen containing gas and

forming the second layer over the first layer.

15. The method of claim 14, wherein the silicon containing gas is silane and the oxygen containing gas is oxygen.

16. The method of claim 14, wherein the silicon containing coating further comprises a third layer comprising silicon and a fourth layer comprising silicon and oxygen, and further comprising:

forming the third layer between the first layer and the second layer; and

forming the fourth layer between the third layer and the second layer.

17. The method of claim 14, wherein the second layer further comprises oxygen, wherein a first concentration of oxygen in the second layer proximate the interface of the first and second layers is greater than a second concentration of oxygen in the second layer proximate an outer surface of the second layer.

18. The method of claim 17, wherein the concentration of oxygen at the outer surface of the second layer is substantially zero.

19. The method of claim 11, further comprising:

placing a substrate in the process chamber;

providing a fluorine containing gas plasma precursor to the process chamber;

forming a plasma in the process chamber from the fluorine containing gas; and

processing the substrate with the plasma.

20. The method of claim 19, wherein the fluorine containing gas further comprises at least one of boron, arsenic, germanium, carbon, nitrogen, or phosphorous.