METHODS FOR FABRICATING FINFET SEMICONDUCTOR DEVICES USING PLANARIZED SPACERS
First Claim
1. A method of fabricating a semiconductor device on and in a semiconductor substrate, the method comprising the steps of:
- forming a sacrificial mandrel overlying the substrate, the sacrificial mandrel having sidewalls;
forming sidewall spacers adjacent the sidewalls of the sacrificial mandrel, the sidewall spacers having an upper portion and a lower portion;
removing the upper portion of the sidewall spacers;
removing the sacrificial mandrel; and
etching the semiconductor substrate using the lower portion of the sidewall spacers as an etch mask.
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Accused Products
Abstract
Methods of fabricating a semiconductor device on and in a semiconductor substrate are provided. In accordance with an exemplary embodiment of the invention, one method comprises forming a sacrificial mandrel overlying the substrate, wherein the sacrificial mandrel has sidewalls. Sidewall spacers are formed adjacent the sidewalls of the sacrificial mandrel, the sidewall spacers having an upper portion and a lower portion. The upper portion of the sidewall spacers is removed. The sacrificial mandrel is removed and the semiconductor substrate is etched using the lower portion of the sidewall spacers as an etch mask.
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Citations
20 Claims
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1. A method of fabricating a semiconductor device on and in a semiconductor substrate, the method comprising the steps of:
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forming a sacrificial mandrel overlying the substrate, the sacrificial mandrel having sidewalls; forming sidewall spacers adjacent the sidewalls of the sacrificial mandrel, the sidewall spacers having an upper portion and a lower portion; removing the upper portion of the sidewall spacers; removing the sacrificial mandrel; and etching the semiconductor substrate using the lower portion of the sidewall spacers as an etch mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of fabricating a semiconductor device on and in a semiconductor substrate, the method comprising the steps of:
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forming a sacrificial mandrel overlying the substrate, the sacrificial mandrel having sidewalls; forming sidewall spacers adjacent the sidewalls of the sacrificial mandrel, the sidewall spacers having an upper portion and a lower portion; reducing the aspect ratio of the sidewall spacers with a chemical mechanical planarization process that removes the upper portion; removing the sacrificial mandrel; and etching the semiconductor substrate using the lower portion of the sidewall spacers as an etch mask. - View Dependent Claims (13, 14, 15)
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16. A method of fabricating a semiconductor device on and in a semiconductor substrate, the substrate having a surface, the method comprising the steps of:
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forming a sacrificial mandrel overlying the surface of the substrate, the sacrificial mandrel having sidewalls; forming sidewall spacers adjacent the sidewalls of the sacrificial mandrel, the sidewall spacers having an upper portion and a lower portion; depositing a planarizing layer overlying the surface of the substrate, the sacrificial mandrel, and the sidewall spacers; etching the sacrificial mandrel, the sidewall spacers, and the planarizing layer at substantially the same rate until the upper portion of the sidewall spacers is removed; removing the planarizing layer; removing the sacrificial mandrel; and etching the semiconductor substrate using the lower portion of the sidewall spacers as an etch mask. - View Dependent Claims (17, 18, 19, 20)
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Specification