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Post Treatment Methods for Oxide Layers on Semiconductor Devices

  • US 20100267248A1
  • Filed: 04/19/2010
  • Published: 10/21/2010
  • Est. Priority Date: 04/20/2009
  • Status: Active Grant
First Claim
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1. A method of treating an oxide layer on a semiconductor substrate, comprising:

  • placing a substrate on a substrate support having a stack defining a horizontal surface and a sidewall in a reaction chamber;

    forming an oxide layer on the stack, the oxide layer having a thickness; and

    treating the oxide layer with a post-treatment plasma, selected from a hydrogen plasma, a helium plasma and a neon plasma.

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