Post Treatment Methods for Oxide Layers on Semiconductor Devices
First Claim
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1. A method of treating an oxide layer on a semiconductor substrate, comprising:
- placing a substrate on a substrate support having a stack defining a horizontal surface and a sidewall in a reaction chamber;
forming an oxide layer on the stack, the oxide layer having a thickness; and
treating the oxide layer with a post-treatment plasma, selected from a hydrogen plasma, a helium plasma and a neon plasma.
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Abstract
Methods and apparatus for post treating an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, the oxide layer is formed by thermal oxidation or plasma oxidation and treated with a plasma comprising helium. The helium-containing plasma may also include hydrogen, neon, argon and combinations thereof. In one or more embodiments, a SiO2 oxide layer is formed on a silicon substrate and treated with a plasma to improve the interface between the silicon substrate and the SiO2 oxide layer.
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Citations
20 Claims
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1. A method of treating an oxide layer on a semiconductor substrate, comprising:
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placing a substrate on a substrate support having a stack defining a horizontal surface and a sidewall in a reaction chamber; forming an oxide layer on the stack, the oxide layer having a thickness; and treating the oxide layer with a post-treatment plasma, selected from a hydrogen plasma, a helium plasma and a neon plasma. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of treating an oxide layer on a semiconductor substrate, comprising:
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placing a substrate including a stack defining a horizontal surface and a sidewall on a substrate support in a reaction chamber; forming an oxide layer on the stack, the oxide layer having a thickness; and treating the oxide layer with a helium-containing plasma to change a property of the oxide layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification