Self-Anchoring MEMS Intrafascicular Neural Electrode

• US 20100268055A1
• Filed: 07/21/2008
• Published: 10/21/2010
• Est. Priority Date: 07/19/2007
• Status: Abandoned Application

• Current Assignee: Arizona Board of Regents (University of Arizona)
• Original Assignee: Arizona Board of Regents (University of Arizona)
• Inventors: Phillips, Stephen M., Jung, Ranu, Abbas, James J.
• Application Number:
  US12/669,761
• Publication Number:
  US 20100268055A1
• Time in Patent Office: Days
• US Class Current: 600/377
• CPC Class Codes: A61B 2562/028 Microscale sensors, e.g. electromechanical sensors [MEMS]
• CPC Class Codes: A61B 2562/125 characterised by the manufacture of electrodes
• CPC Class Codes: A61B 5/24 Detecting, measuring or recording bioelectric or biomagnetic signals of the body or parts thereof
• CPC Class Codes: A61B 5/294 for nerve conduction study [NCS]
• CPC Class Codes: A61B 5/4064 Evaluating the brain A61B5/031, A61B5/369, A61B5/14553 take precedence
• CPC Class Codes: A61B 5/4076 Diagnosing or monitoring particular conditions of the nervous system A61B5/4821, A61B5/4824 take precedence
• CPC Class Codes: A61B 5/6882 Anchoring means
• CPC Class Codes: A61N 1/0558 Anchoring or fixation means therefor

Abstract

The present invention provides a self anchoring electrode for recording, measuring and/or stimulating nerve activity in nerves and/or nerve fascicles of the peripheral nervous system, and methods for using such a self anchoring electrode.

Claims

1. An intrafascicular neural electrode comprising a microelectromechanical system (MEMS) comprising a stem structure, at least one barb structure attached to the stem structure, and at least one conductive trace located on the stem structure or the stem structure and the barb structure, wherein:

(A) the stem structure comprises;

(i) a lead end and a contact end

(B) the barb structure comprises;

(i) a base end in direct contact with the stem structure;

(ii) an unattached distal tip end located opposite from the base end;

wherein the barb structure comprises at least two layers comprising;

(a) a first layer; and

(b) a second layer;

wherein the first and the second layers have different thermal expansion coefficients, such that when the barb structure is at a first temperature it is in a first, zero stress position, and when at a second temperature it is in a second, flex position.

2. The intrafascicular neural electrode of claim 1, wherein the at least one conductive trace is located on the stem structure and the barb structure.

3. The intrafascicular neural electrode of claim 1, comprising more that one conductive trace located on the stem structure and the barb structure.

4. The intrafascicular neural electrode of claim 1, wherein the conductive trace is selected from gold, platinum, copper, silver, aluminum, nickel, titanium, or doped polysilicon.

5. The intrafascicular neural electrode of claim 1, wherein the at least one conductive trace is located along substantially the entire length of the stem structure.

6. The intrafascicular neural electrode of claim 1, comprising more than one barb structure.

7. The intrafascicular neural electrode of claim 6, comprising more than one conductive trace located along the length of the stem structure.

8. The intrafascicular neural electrode of claim 1, wherein the first layer and second layer of the barb structure are independently selected from silicon, polysilicon, silicon dioxide, silicon nitride, fused silica glass, and titanium, wherein the first layer and the second layer are not the same.

9. The intrafascicular neural electrode of claim 6, wherein the more than one barb structures are located at different discrete locations along the length of the stem structure.

10. The intrafascicular neural electrode of claim 6, wherein the more than one barb structures are attached at substantially the same location on the stem structure.

11. The intrafascicular neural electrode of claim 6, wherein the more than one barb structures are oriented such that when at the zero stress position the distal tip end of each barb structure is closer to the contact end of the stem structure than to the lead end of the stem structure.

12. The intrafascicular neural electrode of claim 6, wherein at least one of the more than one barb structures is oriented such that when at the zero stress position the distal tip end is closer to the contact end of the stem structure than to the lead end of the stem structure, and at least one of the more than one barb structures is oriented such that when at the zero stress position the distal tip end is closer to the lead end of the stem structure than to the contact end of the stem structure.

13. The intrafascicular neural electrode of claim 1, wherein the stem is about 25-150 microns in width, and the barb width is less than the width of the stem.

14. The intrafascicular neural electrode of claim 1, wherein the second temperature is about 28°

C. or higher.

15. The intrafascicular neural electrode of claim 1, wherein the first temperature is about 2°

C. to about 23°

C.

16. The intrafascicular neural electrode of claim 1, wherein the different thermal expansion coefficients are selected such that an increase of about 5°

C. from initial temperature positions the barb structure in the flex position.

19. A neuroprosthetic device comprising the neural electrode of claim 1.

20. A method of treating a condition or disorder associated with impaired neural function in a patient comprising connecting to the peripheral nervous system of patient at least one intrafascicular electrode of claim 1, wherein the condition or disorder associated with impaired neural function is selected from impairment or loss of tactile sensation;

impaired hearing;

impaired vision;

impaired motor control;

impaired bladder control;

Parkinson'"'"'s disease;

paraplegia, tetraplegia;

amyotrophic lateral sclerosis;

loss of bowel control;

erectile dysfunction;

loss of cognitive function;

gastroparesis, irregular heartbeat;

impaired respiration, and pain.

21. A method of augmenting neurological function in a person with normal neurological function comprising connecting to the peripheral nervous system of the person at least one intrafascicular electrode of claim 1, and providing a stimulus via the intrafascicular electrode, wherein the stimulus elicits sensations in the sensory nerves of the peripheral nervous system of the person.

22. A method of augmenting neurological function in a person with normal neurological function comprising connecting to the peripheral nervous system of the person at least one intrafascicular electrode of claim 1, recording neural activity from the peripheral nervous system, transmitting the recorded neural activity to an external device, wherein the transmission of recorded activity generates a response in the external device;

and providing a return stimulus from the external device via the intrafascicular electrode, wherein the return stimulus elicits sensations in the sensory nerves of the peripheral nervous system of the person.

17. A method for measuring and/or recording activity in a neural cell from the peripheral nervous system (PNS) comprising

(I) attaching to the neural cell an electrode system comprising

(1) a neural electrode comprising a microelectromechanical system (MEMS) comprising a stem structure, at least one barb structure attached to the stem structure, and at least one conductive trace located on either the stem structure or the barb structure or both, wherein:

(A) the stem structure comprises;

(a) a lead end and a contact end

(B) the barb structure comprises;

(a) a base end in direct contact with the stem structure;

(b) an unattached distal tip end located opposite from the base end;

wherein the barb structure comprises at least two layers comprising;

(i) a first layer; and

(ii) a second layer;

wherein the first and the second layers have different thermal expansion coefficients, such that when the barb structure is at a first temperature it is in a first, zero stress position, and when at a second temperature it is in a second, flex position; and

(2) a device that can measure neural activity in electrical communication with the neural electrode of (1); and

(II) measuring and/or recording the neural activity detected by the at least one conductive trace.

18. A method for stimulating a neural cell from the peripheral nervous system (PNS) comprising:

(I) attaching to the neural cells an electrode system comprising

(1) a neural electrode comprising a microelectromechanical system (MEMS) comprising a stem structure, at least one barb structure attached to the stem structure, and at least one conductive trace located on either the stem structure or the barb structure or both, wherein;

(A) the stem structure comprises;

(a) a lead end and a contact end

(B) the barb structure comprises;

(a) a base end in direct contact with the stem structure;

(b) an unattached distal tip end located opposite from the base end;

wherein the barb structure comprises at least two layers comprising;

(i) a first layer; and

(ii) a second layer;

wherein the first and the second layers have different thermal expansion coefficients, such that when the barb structure is at a first temperature it is in a first, zero stress position, and when at a second temperature it is in a second, flex position; and

(2) a device that can provide a stimulus to neural cells in electrical communication with the neural electrode of (1); and

(II) applying an electric stimulus to the neural cell by inputting a stimuli to the neural cell through at least one conductive trace.

23. A method of making an intrafascicular electrode comprising:

(a) providing a substrate;

(b) layering a first material having a first thermal expansion coefficient onto the substrate;

(c) layering a second material having a second thermal expansion coefficient onto the layer of the first material;

(d) applying a mask to the layer of the second material to form a pattern for a conductive layer;

(e) applying a conductive layer on top of the masked layer of the second material, forming a conductive trace;

(f) applying a second mask to the surface of the material generated in (e) to form the dimensions of a barb structure having a base end, a distal tip end and two adjacent sides;

(g) etching along three sides of the barb structure defined by the mask of (f) to form openings along the barb structure, creating a distal tip end, and two adjacent sides;

wherein

the distal tip end of the barb structure is not attached to the substrate; and

the first thermal expansion coefficient and the second thermal expansion coefficient are not the same.