PLASMA PROCESSING APPARATUS
First Claim
1. A plasma processing apparatus for performing a plasma processing on a substrate to be processed by generating an inductively coupled plasma of a processing gas in a depressurized processing chamber, the plasma processing apparatus comprising:
- a mounting table, provided in the processing chamber, for mounting thereon the substrate to be processed;
a gas supply unit for introducing the processing gas into the processing chamber;
a gas exhaust unit for depressurizing the inside of the processing chamber;
a planar high frequency antenna disposed opposite to the mounting table with a plate-shaped dielectric member therebetween; and
a shield member covering the high frequency antenna,wherein the high frequency antenna includes an inner antenna element provided at a central portion of a region above the plate-shaped dielectric member and an outer antenna element provided at an edge portion of the region above the plate-shaped dielectric member to surround a periphery of the inner antenna element, andwherein two ends of each of the antenna elements are open ends and the antenna elements are grounded at central points thereof or points close thereto to resonate at ½
wavelengths of high frequencies from individual high frequency power supplies.
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Accused Products
Abstract
A plasma processing apparatus, for performing a plasma processing on a target substrate by generating an inductively coupled plasma of a processing gas in a depressurized processing chamber, includes: a mounting table; a gas supply unit; a gas exhaust unit; a planar high frequency antenna disposed opposite to the mounting table with a plate-shaped dielectric member therebetween and a shield member covering the high frequency antenna. The high frequency antenna includes an inner antenna element provided at a central portion of a region above the plate-shaped dielectric member and an outer antenna element provided at an edge portion to surround a periphery of the inner antenna element. Further, two ends of each of the antenna elements are open ends and the antenna elements are grounded at central points thereof or points close thereto to resonate at ½ wavelengths of high frequencies from individual high frequency power supplies.
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Citations
16 Claims
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1. A plasma processing apparatus for performing a plasma processing on a substrate to be processed by generating an inductively coupled plasma of a processing gas in a depressurized processing chamber, the plasma processing apparatus comprising:
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a mounting table, provided in the processing chamber, for mounting thereon the substrate to be processed; a gas supply unit for introducing the processing gas into the processing chamber; a gas exhaust unit for depressurizing the inside of the processing chamber; a planar high frequency antenna disposed opposite to the mounting table with a plate-shaped dielectric member therebetween; and a shield member covering the high frequency antenna, wherein the high frequency antenna includes an inner antenna element provided at a central portion of a region above the plate-shaped dielectric member and an outer antenna element provided at an edge portion of the region above the plate-shaped dielectric member to surround a periphery of the inner antenna element, and wherein two ends of each of the antenna elements are open ends and the antenna elements are grounded at central points thereof or points close thereto to resonate at ½
wavelengths of high frequencies from individual high frequency power supplies. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A plasma processing apparatus for performing a plasma processing on a substrate to be processed by generating an inductively coupled plasma of a processing gas in a depressurized processing chamber, the plasma processing apparatus comprising:
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a susceptor, provided in the processing chamber, for mounting thereon the substrate to be processed; a high frequency susceptor power supply for applying a high frequency power to the susceptor; a gas supply unit for introducing a processing gas into the processing chamber; a gas exhaust unit for depressurizing the inside of the processing chamber; a planar high frequency antenna disposed opposite to the mounting table with a plate-shaped dielectric member therebetween; and a shield member covering the high frequency antenna, wherein the high frequency antenna includes an inner antenna element disposed at a central portion of a region above the plate-shaped dielectric member and an outer antenna element provided to surround a periphery of the inner antenna element, wherein two ends of each of the antenna elements are open ends and the antenna elements are grounded at central points thereof or points close thereto to resonate at ½
wavelengths of high frequencies from individual high frequency antenna power supplies. - View Dependent Claims (14, 15, 16)
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Specification