METHODS FOR MAKING ELECTRONIC DEVICES

• US 20100270058A1
• Filed: 12/08/2008
• Published: 10/28/2010
• Est. Priority Date: 12/14/2007
• Status: Abandoned Application

• Current Assignee: 3M Innovative Properties Company (3M Company)
• Original Assignee: 3M Innovative Properties Company (3M Company)
• Inventors: Nirmal, Manoj, Stay, Matthew S., Mahoney, Wayne S., Wardhana, Jane K.
• Application Number:
  US12/746,857
• Publication Number:
  US 20100270058A1
• Time in Patent Office: Days
• US Class Current: 174/250
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making

Abstract

The present disclosure describes methods for making an electronic device. Methods for making electronic devices include providing a first electrode, an electro-responsive layer, and a second electrode. A first conductive nanostructured grid is deposited on a surface of the first electrode. The electro-responsive layer is facing the first conductive nanostructured grid. The electro-responsive layer is positioned between the first electrode and the second electrode. An electronic device having a first nanostructured grid deposited on a first electrode is described.

Claims

1. A method of making an electronic device comprising:

providing a first electrode;

depositing a first conductive nanostructured grid on a surface of the first electrode, the depositing comprising

(a) applying a coating composition in a coating direction to the surface of the first electrode to form a chromonic layer, the coating composition comprising chromonic material, surface modified inorganic nanoparticles, and water;

(b) removing at least a portion of the water from the chromonic layer to form a dried chromonic layer;

(c) exposing the dried chromonic layer to a hydrophilic organic solvent forming a channel pattern within the dried chromonic layer, the channel pattern comprising (i) a first set of channels in the coating direction and (ii) a second set of channels that are substantially perpendicular to the first set of channels;

(d) disposing a metal containing material on a surface of the dried chromonic layer opposite the first electrode, and within both the first set of channels and the second set of channels, the metal containing material within the first set of channels and the second set of channels contacting the first electrode; and

(e) removing both the dried chromonic layer and the metal containing material disposed on the dried chromonic layer, wherein the metal containing material disposed within the first set of channels and the second set of channels adheres to the first electrode;

providing an electro-responsive layer facing the first conductive nanostructured grid;

providing a second electrode; and

positioning the electro-responsive layer between the first electrode and the second electrode.

2. The method of claim 1, wherein the first electrode comprises a conductive layer that is an outermost layer of a multilayer structure.

3. The method of any one of claims 1 to 2, wherein the conductive layer comprises indium tin oxide, fluorine doped tin oxide, aluminum doped tin oxide, zinc oxide or combinations thereof.

4. The method of any one of claims 1 to 3, wherein a second conductive nanostructured grid is deposited on a surface of the second electrode.

5. The method of any one of claims 1 to 4, wherein a second conductive nanostructured grid is facing the electro-responsive layer.

6. The method of any one of claims 1 to 5, wherein the metal containing material comprises a metal, a metal oxide, an organometallic compound, a salt of a metal, a metal alloy, or combinations thereof.

7. The method of any one of claims 1 to 6, wherein the electro-responsive layer comprises an inorganic light emitting material, an organic light emitting material, a liquid crystal material, an electrochromic material, or combinations thereof.

8. The method of any one of claims 1 to 7, wherein the metal containing material disposed within the first set of channels and the second set of channels independently has an average height in a range of 10 nanometers to 2 micrometers.

9. The method of any one of claims 1 to 8, wherein the metal containing material disposed within the first set of channels and the second set of channels independently has an average width in a range of 10 nanometers to 800 nanometers.

10. The method of any one of claims 1 to 9, wherein the metal containing material disposed within the first set of channels and the second set of channels independently has an average period in a range of 2 micrometers to 20 micrometers.

11-14. -14. (canceled)

15. An electronic device comprising:

a first electrode;

a first conductive nanostructured grid deposited on a surface of the first electrode, the first conductive nanostructured grid comprising a first set of conductive nanostructures and a second set of conductive nanostructures, the second set of conductive nanostructures substantially perpendicular to the first set of conductive nanostructures;

an electro-responsive layer facing the first conductive nanostructured grid; and

a second electrode;

wherein the electro-responsive layer is positioned between the first electrode and the second electrode.

16. The electronic device of claim 15, wherein a reinforced electrode structure comprising the first electrode in combination with the first conductive nanostructured grid has an optical transmission of at least 70 percent.

17. The electronic device of any one of claims 15 to 16, wherein a reinforced electrode structure comprising the first electrode in combination with the first conductive nanostructured grid retains a surface conductivity of at least 70 percent after mechanically bending the reinforced electrode structure at least 6 times at a 90 degree angle over a mandrel.

18. The electronic device of any one of claims 15 to 17, wherein the first set of conductive nanostructures and the second set of conductive nanostructures distributed over at least 80 percent of the length and over at least 80 percent of the width of the first electrode.

19. The electronic device of any one of claims 15 to 18, wherein the first set of conductive nanostructures and the second set of conductive nanostructures independently have an average height in a range of 10 nanometers to 2 micrometers.

20. The electronic device of any one of claims 15 to 19, wherein the first set of conductive nanostructures and the second set of conductive nanostructures independently have an average width in a range of 10 nanometers to 800 nanometers.

21. The electronic device of any one of claims 15 to 20, wherein the first set of conductive nanostructures and the second set of conductive nanostructures independently have an average period in a range of 2 micrometers to 20 micrometers.

22. The electronic device of any one of claims 15 to 21, wherein a second conductive nanostructured grid is deposited on a surface of the second electrode.

23. The electronic device of any one of claims 15 to 22, wherein a second conductive nanostructured grid is facing the electro-responsive layer.

24. A method of making an electronic device comprising:

providing a substrate;

depositing a first conductive nanostructured grid on a surface of the substrate, the depositing comprising

(a) applying a coating composition in a coating direction to the surface of the substrate to form a chromonic layer, the coating composition comprising chromonic material, surface modified inorganic nanoparticles, and water;

(b) removing at least a portion of the water from the chromonic layer to form a dried chromonic layer;

(c) exposing the dried chromonic layer to a hydrophilic organic solvent forming a channel pattern within the dried chromonic layer, the channel pattern comprising

(i) a first set of channels in the coating direction and (ii) a second set of channels that are substantially perpendicular to the first set of channels;

(d) disposing a metal containing material on a surface of the dried chromonic layer opposite the substrate, and within both the first set of channels and the second set of channels, the metal containing material within the first set of channels and the second set of channels contacting the substrate; and

(e) removing both the dried chromonic layer and the metal containing material disposed on the dried chromonic layer, wherein the metal containing material disposed within the first set of channels and the second set of channels adheres to the substrate;

depositing a conductive layer on the first conductive nanostructured grid and on the surface of the substrate forming a first electrode structure;

providing an electro-responsive layer facing the conductive layer of the first electrode structure;

providing a second electrode; and

positioning the electro-responsive layer between the first electrode structure and the second electrode.

25. (canceled)

26. An electronic device comprising:

a substrate;

a first conductive nanostructured grid deposited on a surface of the substrate, the first conductive nanostructured grid comprising a first set of conductive nanostructures and a second set of conductive nanostructures, the second set of conductive nanostructures substantially perpendicular to the first set of conductive nanostructures;

a conductive layer deposited on the first conductive nanostructured grid and on the surface of the substrate of a first electrode structure;

an electro-responsive layer facing the conductive layer of the first electrode structure; and

a second electrode;

wherein the electro-responsive layer is positioned between the first electrode structure and the second electrode.