PHOTONIC CRYSTAL LED
First Claim
1. A semiconductor light emitting diode (1, LED), comprising:
- a first and a second electrode (40, 11) for applying a voltage across an active region (4), disposed between a first type semiconductor layer (21) and a second type semiconductor layer (30) for generation of light, a light emitting surface (6) for emitting said light, and a plurality of photonic crystals (101, 102) disposed between said light emitting surface (6) and said active region (4), characterized in that at least two photonic crystals (101, 102) of a first and a second type, selected among said plurality of photonic crystals (101, 102), are adapted to extract light from said active region (4) and differ from each other with respect to at least one lattice parameter, each of said at least two photonic crystals (101, 102) being associated with a respective far field pattern, wherein an arrangement of said plurality of photonic crystals (101, 102) is provided to arrange said at least two photonic crystals (101, 102), such that a far field pattern from the light generated in the LED (1) is created by combining said respective far field patterns associated with each of said at least two photonic crystals (101, 102).
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Accused Products
Abstract
A semiconductor light emitting diode (1, LED), comprising a first and a second electrode (40, 11) for applying a voltage across an active region (4) for generation of light, a light emitting surface (6), and a plurality of photonic crystals (101, 102). Further, at least two photonic crystals (101, 102) of a first and a second type are adapted to extract light from the active region (4) and differ from each other with respect to at least one lattice parameter. Each of said at least two photonic crystals (101, 102) are associated with a respective far field pattern, wherein an arrangement of said plurality of photonic crystals (101, 102) is provided to arrange said at least two photonic crystals (101, 102). In this manner, a far field pattern is created by combining the respective far field patterns associated with each of said at least two photonic crystals (101, 102).
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Citations
14 Claims
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1. A semiconductor light emitting diode (1, LED), comprising:
a first and a second electrode (40, 11) for applying a voltage across an active region (4), disposed between a first type semiconductor layer (21) and a second type semiconductor layer (30) for generation of light, a light emitting surface (6) for emitting said light, and a plurality of photonic crystals (101, 102) disposed between said light emitting surface (6) and said active region (4), characterized in that at least two photonic crystals (101, 102) of a first and a second type, selected among said plurality of photonic crystals (101, 102), are adapted to extract light from said active region (4) and differ from each other with respect to at least one lattice parameter, each of said at least two photonic crystals (101, 102) being associated with a respective far field pattern, wherein an arrangement of said plurality of photonic crystals (101, 102) is provided to arrange said at least two photonic crystals (101, 102), such that a far field pattern from the light generated in the LED (1) is created by combining said respective far field patterns associated with each of said at least two photonic crystals (101, 102). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
Specification