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Method for producing a vertical transistor component

  • US 20100270612A1
  • Filed: 07/11/2010
  • Published: 10/28/2010
  • Est. Priority Date: 09/30/2004
  • Status: Active Grant
First Claim
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1. A vertical transistor component comprising:

  • a semiconductor substrate;

    a gate electrode disposed above the semiconductor substrate and insulated from the semiconductor substrate;

    a monocrystalline semiconductor layer disposed adjacent to the gate electrode in a lateral direction and insulated from the gate electrode, the monocrystalline semiconductor layer extending in a vertical direction as far as the semiconductor substrate; and

    a connection electrode arranged adjacent to the monocrystalline semiconductor layer above the semiconductor substrate, wherein the connection electrode makes contact with the semiconductor substrate in a region of a semiconductor zone that is doped complementarily with respect to remaining regions of the semiconductor substrate.

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