Method for producing a vertical transistor component

• US 20100270612A1
• Filed: 07/11/2010
• Published: 10/28/2010
• Est. Priority Date: 09/30/2004
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Rieger, Walter, Poelzl, Martin
• Granted Patent: US 8,093,654 B2
• Time in Patent Office: Days
• US Class Current: 257/330
• CPC Class Codes: H01L 29/0865 Disposition
• CPC Class Codes: H01L 29/0869 Shape cell layout H01L29/0696
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/66719 With a step of forming an insulating sidewall spacer
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7805 in antiparallel, e.g. freewheel diode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A method for producing a vertical transistor component includes providing a semiconductor substrate, applying an auxiliary layer to the semiconductor substrate, and patterning the auxiliary layer for the purpose of producing at least one trench which extends as far as the semiconductor substrate and which has opposite sidewalls. The method further includes producing a monocrystalline semiconductor layer on at least one of the sidewalls of the trench, producing an electrode insulated from the monocrystalline semiconductor layer on the at least one sidewall of the trench and the semiconductor substrate.

Claims

1. A vertical transistor component comprising:

a semiconductor substrate;

a gate electrode disposed above the semiconductor substrate and insulated from the semiconductor substrate;

a monocrystalline semiconductor layer disposed adjacent to the gate electrode in a lateral direction and insulated from the gate electrode, the monocrystalline semiconductor layer extending in a vertical direction as far as the semiconductor substrate; and

a connection electrode arranged adjacent to the monocrystalline semiconductor layer above the semiconductor substrate, wherein the connection electrode makes contact with the semiconductor substrate in a region of a semiconductor zone that is doped complementarily with respect to remaining regions of the semiconductor substrate.

2. The transistor component according to claim 1 further comprising an insulation layer configured to insulate the connection electrode from the monocrystalline semiconductor layer.

3. The transistor component according to claim 1 wherein the monocrystalline semiconductor layer has a body zone doped complementarily with respect to the semiconductor substrate and a source zone adjoining the body zone in the vertical direction of a same conduction type as the semiconductor substrate, and wherein the connection electrode short-circuits the source zone and the body zone.

4. The transistor component according to claim 3 wherein the monocrystalline semiconductor layer has a semiconductor zone of the same conductivity type as the semiconductor substrate, the semiconductor zone disposed between the semiconductor substrate and the body zone.

5. The transistor component according to claim 1 wherein the monocrystalline semiconductor layer extends beyond the gate electrode in the vertical direction.

6. The transistor component according to claim 1 wherein the gate electrode has a section in which the gate electrode is wider in comparison with remaining sections of the gate electrode.

7. The transistor component according to claim 1 wherein the semiconductor substrate has a more heavily doped section and a more weakly doped section, the more weakly doped section disposed adjacent to the gate electrode and the connection electrode.

9. The transistor component according to claim 1 wherein the monocrystalline semiconductor layer has a body zone doped complementarily with respect to the semiconductor substrate and a source zone adjoining the body zone in the vertical direction of a same conduction type as the semiconductor substrate, and wherein the connection electrode short-circuits the source zone and the body zone.

10. The transistor component according to claim 1 wherein the monocrystalline semiconductor layer has a semiconductor zone of the same conductivity type as the semiconductor substrate, the semiconductor zone disposed between the semiconductor substrate and the body zone.

8. A vertical transistor component comprising:

a semiconductor substrate;

a gate electrode disposed above the semiconductor substrate and insulated from the semiconductor substrate;

a monocrystalline semiconductor layer disposed adjacent to the gate electrode in a lateral direction and insulated from the gate electrode, the monocrystalline semiconductor layer extending in a vertical direction as far as the semiconductor substrate, and wherein the monocrystalline semiconductor layer has a body zone doped complementarily with respect to the semiconductor substrate and a source zone adjoining the body zone in the vertical direction of a same conduction type as the semiconductor substrate, and wherein the connection electrode short-circuits the source zone and the body zone;

a connection electrode arranged adjacent to the monocrystalline semiconductor layer above the semiconductor substrate, wherein the connection electrode makes contact with the semiconductor substrate in a region of a semiconductor zone that is doped complementarily with respect to remaining regions of the semiconductor substrate; and

an insulation layer configured to insulate the connection electrode from the monocrystalline semiconductor layer.

11. The transistor component according to claim 8 wherein the monocrystalline semiconductor layer extends beyond the gate electrode in the vertical direction.

12. The transistor component according to claim 8 wherein the gate electrode has a section in which the gate electrode is wider in comparison with remaining sections of the gate electrode.

13. The transistor component according to claim 8 wherein the semiconductor substrate has a more heavily doped section and a more weakly doped section, the more weakly doped section disposed adjacent to the gate electrode and the connection electrode.

14. A vertical transistor component comprising:

a semiconductor substrate;

a gate electrode disposed above the semiconductor substrate and insulated from the semiconductor substrate;

a monocrystalline semiconductor layer disposed adjacent to the gate electrode in a lateral direction and insulated from the gate electrode, the monocrystalline semiconductor layer extending in a vertical direction as far as the semiconductor substrate, and wherein the monocrystalline semiconductor layer extends beyond the gate electrode in the vertical direction;

a connection electrode arranged adjacent to the monocrystalline semiconductor layer above the semiconductor substrate, wherein the connection electrode makes contact with the semiconductor substrate in a region of a semiconductor zone that is doped complementarily with respect to remaining regions of the semiconductor substrate; and

an insulation layer configured to insulate the connection electrode from the monocrystalline semiconductor layer.

15. The transistor component according to claim 14 wherein the monocrystalline semiconductor layer has a body zone doped complementarily with respect to the semiconductor substrate and a source zone adjoining the body zone in the vertical direction of a same conduction type as the semiconductor substrate, and wherein the connection electrode short-circuits the source zone and the body zone.

16. The transistor component according to claim 15 wherein the monocrystalline semiconductor layer has a semiconductor zone of the same conductivity type as the semiconductor substrate, the semiconductor zone disposed between the semiconductor substrate and the body zone.

17. The transistor component according to claim 14 wherein the gate electrode has a section in which the gate electrode is wider in comparison with remaining sections of the gate electrode.

18. The transistor component according to claim 14 wherein the semiconductor substrate has a more heavily doped section and a more weakly doped section, the more weakly doped section disposed adjacent to the gate electrode and the connection electrode.