ATOMIC LAYER DEPOSITION OF HAFNIUM LANTHANUM OXIDES
First Claim
1. A method for depositing a film on a substrate that is within a reaction chamber, the method comprising applying an atomic layer deposition cycle to the substrate, the cycle comprising:
- exposing the substrate to a first precursor gas pulse sequence, wherein the first precursor gas sequence includes;
exposing the substrate to a first precursor gas for a first precursor pulse interval then removing the first precursor gas thereafter; and
exposing the substrate to a first oxidant gas for a first oxidation pulse interval then removing the first oxidation gas thereafter;
exposing the substrate to a second precursor gas pulse sequence, wherein the second sequence includes;
exposing the substrate to a second precursor gas for a second precursor pulse interval then removing the second precursor gas thereafter; and
exposing the substrate to a second oxidant gas for a second oxidation pulse interval then removing the second oxidation gas thereafter;
wherein the first precursor gas comprises at least one of tetrakis-ethyl-methylamino hafnium (TEMAHf) and lanthanum tris-formamidinate (LaFAMD)3.
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Abstract
There is provided an improved method for depositing thin films using precursors to deposit binary oxides by atomic layer deposition (ALD) techniques. Also disclosed is an ALD method for depositing a high-k dielectric such as hafnium lanthanum oxide (HfLaO) on a substrate. Embodiments of the present invention utilize a combination of ALD precursor elements and cycles to deposit a film with desired physical and electrical characteristics. Electronic components and systems that integrate devices fabricated with methods consistent with the present invention are also disclosed.
143 Citations
47 Claims
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1. A method for depositing a film on a substrate that is within a reaction chamber, the method comprising applying an atomic layer deposition cycle to the substrate, the cycle comprising:
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exposing the substrate to a first precursor gas pulse sequence, wherein the first precursor gas sequence includes; exposing the substrate to a first precursor gas for a first precursor pulse interval then removing the first precursor gas thereafter; and exposing the substrate to a first oxidant gas for a first oxidation pulse interval then removing the first oxidation gas thereafter; exposing the substrate to a second precursor gas pulse sequence, wherein the second sequence includes; exposing the substrate to a second precursor gas for a second precursor pulse interval then removing the second precursor gas thereafter; and exposing the substrate to a second oxidant gas for a second oxidation pulse interval then removing the second oxidation gas thereafter; wherein the first precursor gas comprises at least one of tetrakis-ethyl-methylamino hafnium (TEMAHf) and lanthanum tris-formamidinate (LaFAMD)3. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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25. A method for depositing a film on a substrate that is within a reaction chamber, the method comprising applying an atomic layer deposition cycle to the substrate, the cycle comprising:
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exposing the substrate to a first precursor gas pulse sequence, wherein the first sequence includes; exposing the substrate to a first precursor gas comprising tetrakis-ethyl-methylamino hafnium (TEMAHf) for a first precursor pulse interval; removing the first precursor gas by introducing a purge gas into the reaction chamber for a first precursor purge period; exposing the substrate to a first oxidant gas for a first oxidation pulse interval; and removing the first oxidant gas by introducing the purge gas into the reaction chamber for a first oxidant purge period; exposing the substrate to a second precursor gas pulse sequence, wherein the first sequence includes; exposing the substrate to a second precursor gas comprising Lanthanum tris-formamidinate (LaFAMD)3 for a second precursor pulse interval; removing the first precursor gas by introducing the purge gas into the reaction chamber for a second precursor purge period; exposing the substrate to a second oxidant gas for a second oxidation pulse interval; and removing the second oxidant gas by introducing the purge gas into the reaction chamber for a second oxidant purge period. - View Dependent Claims (26, 27, 28, 29, 30, 31)
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Specification