Semiconductor device and method for manufacturing the same
0 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device includes: a first substrate made of semiconductor and having first regions, which are insulated from each other and disposed in the first substrate; and a second substrate having electric conductivity and having second regions and insulation trenches. Each insulation trench penetrates the second substrate so that the second regions are insulated from each other. The first substrate provides a base substrate, and the second substrate provides a cap substrate. The second substrate is bonded to the first substrate so that a sealed space is provided between a predetermined surface region of the first substrate and the second substrate. The second regions include an extraction conductive region, which is coupled with a corresponding first region.
39 Citations
52 Claims
-
1-35. -35. (canceled)
-
36. A semiconductor device comprising:
-
a base substrate made of a SOI substrate having a SOI layer, an embedded oxide film and a silicon substrate, which are stacked in this order; a plurality of first trenches disposed on the SOI layer and reaching the embedded oxide film; a plurality of base semiconductor regions disposed in the SOI layer and insulated from each other with the plurality of first trenches, wherein at least one of the plurality of base semiconductor regions is a movable semiconductor region having a movable electrode, and wherein at least another one of the plurality of base semiconductor regions is a fixed semiconductor region having a fixed electrode, which faces the movable electrode; a physical quantity sensor provided by the movable electrode and the fixed electrode for detecting a physical quantity based on a capacitance between the movable electrode and the fixed electrode, wherein the movable electrode is movable according to the physical quantity applied to the sensor so that a distance between the movable electrode and the fixed electrode is changeable; a cap substrate made of single crystal silicon and having electric conductivity; a plurality of second trenches, which penetrate the cap substrate; a plurality of cap conductive regions made of single crystal silicon and insulated from each other with the plurality of second trenches; and a conductive film disposed between the base substrate and the cap substrate so that the base substrate and the cap substrate are bonded to each other, wherein a sealed space is provided between the base substrate and the cap substrate, wherein the physical quantity sensor is sealed in the sealed space, wherein a predetermined number of the cap conductive regions are electrically coupled with corresponding base semiconductor regions through the conductive film so that the predetermined number of the cap conductive regions provide a predetermined number of extraction conductive regions, wherein the movable semiconductor region is coupled with one extraction conductive region, and the fixed semiconductor region is coupled with another extraction conductive region, and wherein each extraction conductive region is exposed on a side of the cap substrate, which is opposite to the base substrate. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52)
-
Specification