Resonator and Methods of Making Resonators

• US 20100270632A1
• Filed: 04/27/2009
• Published: 10/28/2010
• Est. Priority Date: 04/27/2009
• Status: Active Grant

• Current Assignee: The Boeing Co.
• Original Assignee: The Boeing Co.
• Inventors: Ge, Howard H.
• Granted Patent: US 8,158,448 B2
• Time in Patent Office: Days
• US Class Current: 257/417
• CPC Class Codes: G01C 19/5684 the devices involving a micromechanical structure
• CPC Class Codes: H03H 2009/02496 Horizontal, i.e. parallel to the substrate plane
• CPC Class Codes: H03H 3/0072 of microelectro-mechanical resonators or networks micromembranes or microbeams B81B2203/01; manufacture of microstructural devices in general B81C
• CPC Class Codes: H03H 9/2431 Ring resonators

Abstract

A resonator and method of making a resonator are provided. A particular method includes etching a silicon substrate to form a resonator structure. The resonator structure includes at least one resonator beam. The method also includes converting at least a portion of the at least one resonator beam to dry oxide.

Claims

1. A method, comprising:

etching a silicon substrate to form a resonator structure, wherein the resonator structure includes at least one resonator beam; and

at least partially converting the at least one resonator beam to dry oxide.

2. The method of claim 1, wherein converting the at least one resonator beam to dry oxide comprises performing a dry oxidization process.

3. The method of claim 1, wherein converting the at least one resonator beam to dry oxide comprises:

performing a wet oxidization process; and

annealing the resonator structure.

4. The method of claim 1, further comprising coupling the silicon substrate to a mounting substrate before etching the silicon substrate to form the resonator structure.

5. The method of claim 4, further comprising etching the mounting substrate to form a resonator base to support the resonator structure before coupling the silicon substrate to the mounting substrate.

6. The method of claim 4, further comprising etching through at least a portion of-the mounting substrate to provide electrical connections.

7. The method of claim 6, wherein the mounting substrate comprises a first silicon layer, an oxide layer and a second silicon layer.

8. The method of claim 1, wherein the at least one resonator beam includes an inner conductive core.

9. A resonator, the resonator formed by a process comprising:

etching a silicon substrate to form a resonator structure, wherein the resonator structure includes at least one resonator beam; and

at least partially converting the at least one resonator beam to dry oxide.

10. The resonator of claim 9, wherein the process further comprises coupling the silicon substrate to a mounting substrate before etching the silicon substrate.

11. The resonator of claim 10, wherein the process further comprises etching a via through the mounting substrate from a side opposite the silicon substrate after coupling the silicon substrate to the mounting substrate.

12. The resonator of claim 11, wherein the process further comprises electrically coupling at least one electrical connection of the resonator structure to a control circuit using the via.

13. The resonator of claim 10, wherein coupling the silicon substrate to the mounting substrate includes fusing a silicon layer of the mounting substrate to the silicon substrate.

14. The resonator of claim 9, wherein the at least one resonator beam includes of an inner conductive core.

15. The resonator of claim 9, wherein the process further comprises using endpoint detection to determine when the at least one resonator beam is substantially converted to an oxide.

16. The resonator of claim 9, wherein at least one electrode is formed in the silicon substrate concurrently with etching the silicon substrate to form the resonator structure.

17. A system, comprising:

a mounting substrate; and

a resonator structure formed of a silicon substrate coupled to the mounting substrate, the resonator structure including;

a resonator beam including dry silicon oxide; and

a mounting portion comprising an at least partially oxidized portion of the silicon substrate.

18. The system of claim 17, wherein the resonator beam includes an inner conductive core.

19. The system of claim 17, further comprising a control circuit coupled to the resonator structure through the mounting substrate.