SEMICONDUCTOR DEVICE HAVING DAMASCENE INTERCONNECTION STRUCTURE THAT PREVENTS VOID FORMATION BETWEEN INTERCONNECTIONS HAVING TRANSPARENT DIELECTRIC SUBSTRATE
First Claim
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1. A semiconductor device comprising:
- a first insulating layer having a through hole;
a first interconnection comprised a first conductive layer, a first barrier layer, and a first main interconnection, the first conductive layer formed on the first insulating layer in the first through hole, the first barrier layer formed on the first conductive layer, and the first main interconnection formed on the first barrier layer so as to bury the through hole; and
a second interconnection connected to one of the first conductive layer and the first barrier layer.
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Abstract
A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which includes a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem where the material of the first main interconnection transfers from a portion connected to the second interconnection due to electromigration to form a void, with the result that the first interconnection is disconnected from the second interconnection.
402 Citations
2 Claims
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1. A semiconductor device comprising:
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a first insulating layer having a through hole; a first interconnection comprised a first conductive layer, a first barrier layer, and a first main interconnection, the first conductive layer formed on the first insulating layer in the first through hole, the first barrier layer formed on the first conductive layer, and the first main interconnection formed on the first barrier layer so as to bury the through hole; and a second interconnection connected to one of the first conductive layer and the first barrier layer.
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2. A method of forming a semiconductor device comprising:
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forming a first insulating layer having a through hole; forming a first interconnection comprised a first conductive layer, a first barrier layer, and a first main interconnection, the first conductive layer formed on the first insulating layer in the first through hole, the first barrier layer formed on the first conductive layer, and the first main interconnection formed on the first barrier layer so as to bury the through hole; and forming a second interconnection connected to one of the first conductive layer and the first barrier layer.
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Specification