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SEMICONDUCTOR DEVICE HAVING DAMASCENE INTERCONNECTION STRUCTURE THAT PREVENTS VOID FORMATION BETWEEN INTERCONNECTIONS HAVING TRANSPARENT DIELECTRIC SUBSTRATE

  • US 20100270675A1
  • Filed: 07/02/2010
  • Published: 10/28/2010
  • Est. Priority Date: 06/11/1998
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first insulating layer having a through hole;

    a first interconnection comprised a first conductive layer, a first barrier layer, and a first main interconnection, the first conductive layer formed on the first insulating layer in the first through hole, the first barrier layer formed on the first conductive layer, and the first main interconnection formed on the first barrier layer so as to bury the through hole; and

    a second interconnection connected to one of the first conductive layer and the first barrier layer.

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