SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- an antenna for communicating information formed over a substrate; and
an integrated circuit formed over the substrate,wherein the integrated circuit comprises a battery capacitor, a rectifier circuit, a booster circuit,wherein the battery capacitor is configured to be charged by using the antenna, the rectifier circuit, and the booster circuit,wherein the antenna includes a base layer and a copper plating layer formed over the base layer,wherein the base layer comprises a nitride film of an alloy, andwherein the alloy includes nickel and any of titanium, tantalum, tungsten, or molybdenum.
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Accused Products
Abstract
An object of the present invention is to prevent electrical characteristics of circuit elements from being adversely affected by copper diffusion in a semiconductor device having an integrated circuit and an antenna formed over the same substrate, which uses copper plating for the antenna. Another object is to prevent a defect of a semiconductor device due to poor connection between an antenna and an integrated circuit in a semiconductor device having the integrated circuit and the antenna formed over the same substrate. In a semiconductor device having an integrated circuit 100 and an antenna 101 formed over one substrate 102, when a copper plating layer 108 is used for a conductor of the antenna 101, it is possible to prevent copper diffusion to circuit elements and decrease an adverse effect on electrical characteristics of circuit elements due to the copper diffusion because a base layer 107 of the antenna 101 uses a nitride film of a predetermined metal. Moreover, by the use of nickel nitride as a metal nitride for the base layer of the antenna, poor connection between the antenna and the integrated circuit can be decreased.
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Citations
16 Claims
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1. A semiconductor device comprising:
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an antenna for communicating information formed over a substrate; and an integrated circuit formed over the substrate, wherein the integrated circuit comprises a battery capacitor, a rectifier circuit, a booster circuit, wherein the battery capacitor is configured to be charged by using the antenna, the rectifier circuit, and the booster circuit, wherein the antenna includes a base layer and a copper plating layer formed over the base layer, wherein the base layer comprises a nitride film of an alloy, and wherein the alloy includes nickel and any of titanium, tantalum, tungsten, or molybdenum. - View Dependent Claims (5, 9, 13)
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2. A semiconductor device comprising:
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a first antenna for communicating information formed over a substrate; a second antenna formed over the substrate; and an integrated circuit formed over the substrate, wherein the integrated circuit comprises a battery capacitor, a rectifier circuit, a booster circuit, wherein the battery capacitor is configured to be charged by using the second antenna, wherein the first antenna and the second antenna include a base layer and a copper plating layer formed over the base layer, wherein the base layer comprises a nitride film of an alloy, and wherein the alloy includes nickel and any of titanium, tantalum, tungsten, or molybdenum. - View Dependent Claims (6, 10, 14)
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3. A semiconductor device comprising:
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an antenna for communicating information formed over a substrate; and an integrated circuit formed over the substrate, wherein the integrated circuit comprises a secondary battery, a rectifier circuit, a booster circuit, wherein the secondary battery is configured to be charged by using the antenna, the rectifier circuit, and the booster circuit, wherein the antenna includes a base layer and a copper plating layer formed over the base layer, wherein the base layer comprises a nitride film of an alloy, and wherein the alloy includes nickel and any of titanium, tantalum, tungsten, or molybdenum. - View Dependent Claims (7, 11, 15)
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4. A semiconductor device comprising:
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a first antenna for communicating information formed over a substrate; a second antenna formed over the substrate; and an integrated circuit formed over the substrate, wherein the integrated circuit comprises a secondary battery, a rectifier circuit, a booster circuit, wherein the secondary battery is configured to be charged by using the second antenna, wherein the first antenna and the second antenna include a base layer and a copper plating layer formed over the base layer, wherein the base layer comprises a nitride film of an alloy, and wherein the alloy includes nickel and any of titanium, tantalum, tungsten, or molybdenum. - View Dependent Claims (8, 12, 16)
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Specification