ELECTROSTATIC CHUCK AND BASE FOR PLASMA REACTOR HAVING IMPROVED WAFER ETCH RATE

• US 20100271745A1
• Filed: 07/14/2009
• Published: 10/28/2010
• Est. Priority Date: 04/24/2009
• Status: Abandoned Application

• Current Assignee: Advanced Micro-Fabrication Equipment Inc.
• Original Assignee: Advanced Micro-Fabrication Equipment Inc.
• Inventors: Ouyang, Liang, Qian, Xueyu, Arami, Junichi, Du, Zhiyou, CHEN, Jinyuan, Yin, Gerald
• Application Number:
  US12/502,988
• Publication Number:
  US 20100271745A1
• Time in Patent Office: Days
• US Class Current: 361/234
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: Y10T 29/49117 Conductor or circuit manufacturing

Abstract

An electrostatic chuck device in which the electrostatic chuck and support are made from high resistivity, high thermal conductivity and low RF energy loss dielectric materials is described. An advantage of this electrostatic chuck device is that the wafer surface electromagnetic field distribution is more uniform than conventional electrostatic chuck devices. As a result, the wafer etch rate, especially the wafer edge etch rate non-uniformity, is significantly improved compared with conventional electrostatic chuck devices.

Claims

1. A plasma reactor comprising:

an enclosure;

a plasma gas source to supply a plasma gas in the enclosure;

a cathode pedestal coupled to the enclosure;

a metallic base supported by the cathode pedestal;

a support coupled to the metallic base;

an electrostatic chuck coupled to the support and having an electrode therein,

wherein the support and the electrostatic chuck each comprises a dielectric material having a high resistivity, high thermal conductivity and low radiofrequency (RF) energy loss;

an RF source coupled to the metallic base to excite the plasma gas in the enclosure; and

a DC voltage source coupled to the electrode to secure a wafer to the electrostatic chuck.

2. The plasma reactor of claim 1, wherein the support and the electrostatic chuck comprise the same dielectric material.

3. The plasma reactor of claim 1, wherein the support and the electrostatic chuck comprise different dielectric materials.

4. The plasma reactor of claim 1, wherein the dielectric material is selected from the group consisting of SiC, ALN and Al₂O₃.

5. The plasma reactor of claim 1, wherein the thickness of the support and electrostatic chuck is about 5-12 mm.

6. The plasma reactor of claim 1, wherein the thickness of the electrostatic chuck is about 0.5-5 mm.

7. The plasma reactor of claim 1, wherein the resistivity of the dielectric material is about 10¹⁰-10¹² ohms.

8. The plasma reactor of claim 1, further comprising a silicon adhesive to bond the electrostatic chuck to the support.

9. The plasma reactor of claim 8, wherein the thickness of the adhesive is less than about 10 μ

m.

10. An electrostatic chuck device for a plasma reactor comprising:

a metallic base;

a support coupled to the metallic base;

an electrostatic chuck coupled to the support and having an electrode therein,

wherein the support and the electrostatic chuck each comprises a dielectric material having a high resistivity, high thermal conductivity and low radiofrequency (RF) energy loss.

11. The electrostatic chuck device of claim 10, wherein the dielectric material is selected from the group consisting of SiC, ALN and Al₂O₃.

12. The electrostatic chuck device of claim 10, wherein the thickness of the support and electrostatic chuck is about 5-12 mm.

13. The electrostatic chuck device of claim 10, wherein the thickness of the electrostatic chuck is about 1-5 mm.

14. The electrostatic chuck device of claim 10, further comprising a silicon adhesive to bond the electrostatic chuck to the support.

15. The electrostatic chuck device of claim 10, wherein the thickness of the adhesive is less than about 10 μ

m.

16. An electrostatic chuck device for a plasma reactor comprising:

a metallic base;

a support coupled to the metallic base, wherein the support comprises SiC or AlN;

an electrostatic chuck coupled to the support, wherein the electrostatic chuck comprises Al₂O₃; and

an electrode in the electrostatic chuck.

17. The electrostatic chuck device of claim 16, wherein the thickness of the support and electrostatic chuck is about 5-12 mm.

18. The electrostatic chuck device of claim 16, wherein the thickness of the electrostatic chuck is about 1-5 mm.

19. The electrostatic chuck device of claim 16, further comprising a silicon adhesive to bond the electrostatic chuck to the support.

20. The electrostatic chuck device of claim 19, wherein the thickness of the adhesive is less than about 10 μ

m.

21. A method of fabricating an electrostatic chuck comprising:

coupling a support to a metallic base, wherein the support comprises dielectric material;

coupling an electrostatic chuck to the support, wherein the electrostatic chuck comprises dielectric material, wherein the dielectric material of the support and the dielectric material of the electrostatic chuck are selected from the group consisting of SiC, ALN and Al₂O₃; and

sintering an electrode in the electrostatic chuck.

22. The method of claim 21, wherein the support and the electrostatic chuck comprise the same dielectric material.