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DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEANING

  • US 20100273291A1
  • Filed: 03/24/2010
  • Published: 10/28/2010
  • Est. Priority Date: 04/28/2009
  • Status: Abandoned Application
First Claim
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1. A method for removing unwanted deposition build-up from one or more interior surfaces of a metal organic chemical vapor deposition (MOCVD) processing chamber, comprising:

  • depositing one or more Group III containing layers over a substrate disposed in the processing chamber;

    transferring the substrate out of the processing chamber;

    pulsing a halogen cleaning gas into the processing chamber to remove at least a portion of the unwanted deposition build-up from one or more interior surfaces of the processing chamber; and

    pulsing a purge gas into the processing chamber after pulsing the halogen cleaning gas to remove reaction by-products formed from the reaction of the halogen cleaning gas with the unwanted deposition build-up from the processing chamber, wherein the pulsing a purge gas immediately follows the pulsing a halogen cleaning gas to remove reaction by-products from the interior surfaces of the processing chamber before the reaction by-products condense on the interior surface of the substrate processing chamber.

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